DE69519079T2 - Fabrikation einer integrierten Schaltung mit Zwillingswannen - Google Patents
Fabrikation einer integrierten Schaltung mit ZwillingswannenInfo
- Publication number
- DE69519079T2 DE69519079T2 DE69519079T DE69519079T DE69519079T2 DE 69519079 T2 DE69519079 T2 DE 69519079T2 DE 69519079 T DE69519079 T DE 69519079T DE 69519079 T DE69519079 T DE 69519079T DE 69519079 T2 DE69519079 T2 DE 69519079T2
- Authority
- DE
- Germany
- Prior art keywords
- well
- layer
- substrate
- fabrication
- wells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000011109 contamination Methods 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35225794A | 1994-12-08 | 1994-12-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69519079D1 DE69519079D1 (de) | 2000-11-16 |
DE69519079T2 true DE69519079T2 (de) | 2001-03-15 |
Family
ID=23384405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69519079T Expired - Fee Related DE69519079T2 (de) | 1994-12-08 | 1995-12-05 | Fabrikation einer integrierten Schaltung mit Zwillingswannen |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0716443B1 (uk) |
JP (1) | JP3300588B2 (uk) |
KR (1) | KR100378448B1 (uk) |
DE (1) | DE69519079T2 (uk) |
TW (1) | TW288157B (uk) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100416002B1 (ko) | 2001-08-31 | 2004-01-24 | 삼성전자주식회사 | 디스플레이장치의 다이나믹포커스 조정회로 |
KR100817417B1 (ko) * | 2006-12-26 | 2008-03-27 | 동부일렉트로닉스 주식회사 | 고전압 씨모스 소자 및 그 제조 방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1213457B (it) * | 1986-07-23 | 1989-12-20 | Catania A | Procedimento per la fabbricazione di dispositivi integrati, in particolare dispositivi cmos adoppia sacca. |
GB8907897D0 (en) * | 1989-04-07 | 1989-05-24 | Inmos Ltd | Forming wells in semiconductor devices |
-
1995
- 1995-12-05 EP EP95308767A patent/EP0716443B1/en not_active Expired - Lifetime
- 1995-12-05 DE DE69519079T patent/DE69519079T2/de not_active Expired - Fee Related
- 1995-12-07 KR KR1019950047251A patent/KR100378448B1/ko not_active IP Right Cessation
- 1995-12-08 JP JP31983995A patent/JP3300588B2/ja not_active Expired - Fee Related
- 1995-12-22 TW TW084113783A patent/TW288157B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0716443B1 (en) | 2000-10-11 |
EP0716443A1 (en) | 1996-06-12 |
KR960026069A (ko) | 1996-07-20 |
JPH08222642A (ja) | 1996-08-30 |
JP3300588B2 (ja) | 2002-07-08 |
TW288157B (uk) | 1996-10-11 |
KR100378448B1 (ko) | 2003-06-02 |
DE69519079D1 (de) | 2000-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |