DE69130624T2 - Verfahren zum Herstellen von Feldeffekt-Transistoren für integrierte Schaltungen - Google Patents
Verfahren zum Herstellen von Feldeffekt-Transistoren für integrierte SchaltungenInfo
- Publication number
- DE69130624T2 DE69130624T2 DE69130624T DE69130624T DE69130624T2 DE 69130624 T2 DE69130624 T2 DE 69130624T2 DE 69130624 T DE69130624 T DE 69130624T DE 69130624 T DE69130624 T DE 69130624T DE 69130624 T2 DE69130624 T2 DE 69130624T2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- integrated circuits
- effect transistors
- manufacturing field
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/543,592 US5045486A (en) | 1990-06-26 | 1990-06-26 | Transistor fabrication method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69130624D1 DE69130624D1 (de) | 1999-01-28 |
DE69130624T2 true DE69130624T2 (de) | 1999-06-17 |
Family
ID=24168682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69130624T Expired - Fee Related DE69130624T2 (de) | 1990-06-26 | 1991-06-19 | Verfahren zum Herstellen von Feldeffekt-Transistoren für integrierte Schaltungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5045486A (de) |
EP (2) | EP0771021A3 (de) |
JP (1) | JP2957757B2 (de) |
DE (1) | DE69130624T2 (de) |
ES (1) | ES2127193T3 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5202277A (en) * | 1989-12-08 | 1993-04-13 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a semiconductor device |
US5298446A (en) * | 1990-02-20 | 1994-03-29 | Sharp Kabushiki Kaisha | Process for producing semiconductor device |
US5330925A (en) * | 1992-06-18 | 1994-07-19 | At&T Bell Laboratories | Method for making a MOS device |
JPH07263684A (ja) * | 1994-03-25 | 1995-10-13 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法 |
TW344897B (en) * | 1994-11-30 | 1998-11-11 | At&T Tcorporation | A process for forming gate oxides possessing different thicknesses on a semiconductor substrate |
US5482876A (en) * | 1995-05-25 | 1996-01-09 | United Microelectronics Corporation | Field effect transistor without spacer mask edge defects |
US6033975A (en) * | 1997-01-02 | 2000-03-07 | Texas Instruments Incorporated | Implant screen and method |
US6069042A (en) * | 1998-02-13 | 2000-05-30 | Taiwan Semiconductor Manufacturing Company | Multi-layer spacer technology for flash EEPROM |
US6001690A (en) * | 1998-02-13 | 1999-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming flash EPROM by using iso+aniso silicon nitride spacer etching technology |
EP1017087A1 (de) * | 1998-12-29 | 2000-07-05 | STMicroelectronics S.r.l. | Herstellungsverfahren für einen halbleitersubstratintegrierten MOS-Transistor |
US6133131A (en) * | 1999-04-19 | 2000-10-17 | United Microelectronics Corp. | Method of forming a gate spacer on a semiconductor wafer |
DE19920333A1 (de) * | 1999-05-03 | 2000-11-16 | Siemens Ag | Verfahren zur Herstellung einer Halbleitervorrichtung |
US6365471B1 (en) * | 1999-06-18 | 2002-04-02 | United Microelectronics Corp. | Method for producing PMOS devices |
US6426278B1 (en) * | 1999-10-07 | 2002-07-30 | International Business Machines Corporation | Projection gas immersion laser dopant process (PGILD) fabrication of diffusion halos |
US7192836B1 (en) * | 1999-11-29 | 2007-03-20 | Advanced Micro Devices, Inc. | Method and system for providing halo implant to a semiconductor device with minimal impact to the junction capacitance |
US6777300B2 (en) * | 2000-12-30 | 2004-08-17 | Texas Instruments Incorporated | Method to improve silicide formation on polysilicon |
CN100347833C (zh) * | 2002-02-01 | 2007-11-07 | Nxp股份有限公司 | 在一个加工步骤中形成不同厚度的高质量氧化物层的方法 |
US6803315B2 (en) | 2002-08-05 | 2004-10-12 | International Business Machines Corporation | Method for blocking implants from the gate of an electronic device via planarizing films |
US20070029608A1 (en) * | 2005-08-08 | 2007-02-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Offset spacers for CMOS transistors |
US8373233B2 (en) * | 2008-11-13 | 2013-02-12 | Applied Materials, Inc. | Highly N-type and P-type co-doping silicon for strain silicon application |
US9196708B2 (en) * | 2013-12-30 | 2015-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for forming a semiconductor device structure |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5378181A (en) * | 1976-12-22 | 1978-07-11 | Hitachi Ltd | Semiconductor device and its manufacture |
JPS53108380A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Semiconductor device |
US4382827A (en) * | 1981-04-27 | 1983-05-10 | Ncr Corporation | Silicon nitride S/D ion implant mask in CMOS device fabrication |
US4422885A (en) * | 1981-12-18 | 1983-12-27 | Ncr Corporation | Polysilicon-doped-first CMOS process |
JPS59188974A (ja) * | 1983-04-11 | 1984-10-26 | Nec Corp | 半導体装置の製造方法 |
JPS59193061A (ja) * | 1983-04-15 | 1984-11-01 | Hitachi Ltd | 半導体装置 |
US4477310A (en) * | 1983-08-12 | 1984-10-16 | Tektronix, Inc. | Process for manufacturing MOS integrated circuit with improved method of forming refractory metal silicide areas |
JPS60241256A (ja) * | 1984-05-16 | 1985-11-30 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPS61191070A (ja) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | 半導体装置の製造方法 |
JPS6245071A (ja) * | 1985-08-22 | 1987-02-27 | Nec Corp | 半導体装置の製造方法 |
JPS6278181A (ja) * | 1985-09-30 | 1987-04-10 | 興陽産業株式会社 | 完熟堆肥・有機肥料の製法及び装置 |
US4760033A (en) * | 1986-04-08 | 1988-07-26 | Siemens Aktiengesellschaft | Method for the manufacture of complementary MOS field effect transistors in VLSI technology |
JPS62241376A (ja) * | 1986-04-11 | 1987-10-22 | Seiko Epson Corp | Mos型半導体装置の製造方法 |
US4728617A (en) * | 1986-11-04 | 1988-03-01 | Intel Corporation | Method of fabricating a MOSFET with graded source and drain regions |
JPS63181459A (ja) * | 1987-01-23 | 1988-07-26 | Matsushita Electronics Corp | 半導体装置の製造方法 |
US4786609A (en) * | 1987-10-05 | 1988-11-22 | North American Philips Corporation, Signetics Division | Method of fabricating field-effect transistor utilizing improved gate sidewall spacers |
US4818714A (en) * | 1987-12-02 | 1989-04-04 | Advanced Micro Devices, Inc. | Method of making a high performance MOS device having LDD regions with graded junctions |
JPH02106043A (ja) * | 1988-10-14 | 1990-04-18 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US5030582A (en) * | 1988-10-14 | 1991-07-09 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a CMOS semiconductor device |
US4874713A (en) * | 1989-05-01 | 1989-10-17 | Ncr Corporation | Method of making asymmetrically optimized CMOS field effect transistors |
JPH0770727B2 (ja) * | 1989-06-16 | 1995-07-31 | 日本電装株式会社 | Misトランジスタ及び相補形misトランジスタの製造方法 |
-
1990
- 1990-06-26 US US07/543,592 patent/US5045486A/en not_active Expired - Lifetime
-
1991
- 1991-06-19 ES ES91305526T patent/ES2127193T3/es not_active Expired - Lifetime
- 1991-06-19 DE DE69130624T patent/DE69130624T2/de not_active Expired - Fee Related
- 1991-06-19 EP EP96120824A patent/EP0771021A3/de not_active Withdrawn
- 1991-06-19 EP EP91305526A patent/EP0465045B1/de not_active Expired - Lifetime
- 1991-06-26 JP JP3153570A patent/JP2957757B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0465045A3 (en) | 1992-05-20 |
DE69130624D1 (de) | 1999-01-28 |
US5045486A (en) | 1991-09-03 |
ES2127193T3 (es) | 1999-04-16 |
EP0465045B1 (de) | 1998-12-16 |
JPH04253341A (ja) | 1992-09-09 |
EP0771021A3 (de) | 1998-01-07 |
JP2957757B2 (ja) | 1999-10-06 |
EP0771021A2 (de) | 1997-05-02 |
EP0465045A2 (de) | 1992-01-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |