DE69516035T2 - Verfharen zum Herstellen eines mit hartem Material bedeckten Halbleiters - Google Patents
Verfharen zum Herstellen eines mit hartem Material bedeckten HalbleitersInfo
- Publication number
- DE69516035T2 DE69516035T2 DE69516035T DE69516035T DE69516035T2 DE 69516035 T2 DE69516035 T2 DE 69516035T2 DE 69516035 T DE69516035 T DE 69516035T DE 69516035 T DE69516035 T DE 69516035T DE 69516035 T2 DE69516035 T2 DE 69516035T2
- Authority
- DE
- Germany
- Prior art keywords
- producing
- hard material
- semiconductor covered
- semiconductor
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13377394A JPH07314302A (ja) | 1994-05-23 | 1994-05-23 | 硬質ウエハ−の研磨方法及び研磨装置 |
JP16591494A JP3666029B2 (ja) | 1994-06-24 | 1994-06-24 | 硬質物質被覆ウエハ−及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69516035D1 DE69516035D1 (de) | 2000-05-11 |
DE69516035T2 true DE69516035T2 (de) | 2000-08-31 |
Family
ID=26468026
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69516035T Expired - Lifetime DE69516035T2 (de) | 1994-05-23 | 1995-04-27 | Verfharen zum Herstellen eines mit hartem Material bedeckten Halbleiters |
DE69526129T Expired - Lifetime DE69526129T2 (de) | 1994-05-23 | 1995-04-27 | Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69526129T Expired - Lifetime DE69526129T2 (de) | 1994-05-23 | 1995-04-27 | Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren |
Country Status (5)
Country | Link |
---|---|
US (3) | US5855998A (de) |
EP (2) | EP0878268B1 (de) |
KR (1) | KR0147144B1 (de) |
DE (2) | DE69516035T2 (de) |
IL (1) | IL113670A0 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69503285T2 (de) * | 1994-04-07 | 1998-11-05 | Sumitomo Electric Industries | Diamantwafer und Verfahren zur Herstellung eines Diamantwafers |
DE69516035T2 (de) | 1994-05-23 | 2000-08-31 | Sumitomo Electric Industries | Verfharen zum Herstellen eines mit hartem Material bedeckten Halbleiters |
DE69535861D1 (de) * | 1994-06-24 | 2008-11-27 | Sumitomo Electric Industries | Wafer und sein Herstellungsverfahren |
US6478977B1 (en) * | 1995-09-13 | 2002-11-12 | Hitachi, Ltd. | Polishing method and apparatus |
KR19990024436A (ko) * | 1997-09-02 | 1999-04-06 | 윤종용 | 화학기계적 연마장치 |
JP3168961B2 (ja) * | 1997-10-06 | 2001-05-21 | 住友電気工業株式会社 | ダイヤモンド基板及びダイヤモンド基板の評価方法並びにダイヤモンド表面弾性波フィルタ |
US20030199238A1 (en) * | 2000-01-18 | 2003-10-23 | Shigeo Moriyama | Polishing apparatus and method for producing semiconductors using the apparatus |
US6416865B1 (en) | 1998-10-30 | 2002-07-09 | Sumitomo Electric Industries, Ltd. | Hard carbon film and surface acoustic-wave substrate |
US6342333B1 (en) * | 1999-09-23 | 2002-01-29 | Hitachi Chemical Dupont Microsystems, L.L.C. | Photosensitive resin composition, patterning method, and electronic components |
US6337513B1 (en) * | 1999-11-30 | 2002-01-08 | International Business Machines Corporation | Chip packaging system and method using deposited diamond film |
US6566983B2 (en) * | 2000-09-02 | 2003-05-20 | Lg Electronics Inc. | Saw filter using a carbon nanotube and method for manufacturing the same |
US6547876B2 (en) | 2001-02-07 | 2003-04-15 | Emcore Corporation | Apparatus for growing epitaxial layers on wafers by chemical vapor deposition |
JP2002273649A (ja) * | 2001-03-15 | 2002-09-25 | Oki Electric Ind Co Ltd | ドレッサ−を有する研磨装置 |
US6663474B2 (en) * | 2001-03-19 | 2003-12-16 | United Microelectronics Corp. | Apparatus and system of chemical mechanical polishing |
JP2003019649A (ja) * | 2001-07-05 | 2003-01-21 | Seiko Instruments Inc | 端面研磨装置 |
JP2003117833A (ja) * | 2001-10-15 | 2003-04-23 | Shin Etsu Chem Co Ltd | 研磨加工板 |
WO2003043780A2 (en) * | 2001-11-20 | 2003-05-30 | Rensselaer Polytechnic Institute | Method for polishing a substrate surface |
JP2003224087A (ja) * | 2002-01-28 | 2003-08-08 | Disco Abrasive Syst Ltd | 半導体ウエーハの加工方法 |
JP3762893B2 (ja) * | 2002-02-13 | 2006-04-05 | 株式会社国際電気通信基礎技術研究所 | 反射装置およびその製造方法 |
US6930376B2 (en) * | 2002-02-13 | 2005-08-16 | Atr Advanced Telecommunications Research Institute International | Semiconductor device having a folded layer structure |
JP2004104074A (ja) * | 2002-07-17 | 2004-04-02 | Sumitomo Electric Ind Ltd | 半導体装置用部材 |
US7594967B2 (en) * | 2002-08-30 | 2009-09-29 | Amberwave Systems Corporation | Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
DE10259174B4 (de) * | 2002-12-18 | 2006-10-12 | Robert Bosch Gmbh | Verwendung eines tribologisch beanspruchten Bauelements |
US7645513B2 (en) * | 2003-02-14 | 2010-01-12 | City University Of Hong Kong | Cubic boron nitride/diamond composite layers |
KR100550491B1 (ko) * | 2003-05-06 | 2006-02-09 | 스미토모덴키고교가부시키가이샤 | 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법 |
US7453160B2 (en) * | 2004-04-23 | 2008-11-18 | Axcelis Technologies, Inc. | Simplified wafer alignment |
US7012011B2 (en) * | 2004-06-24 | 2006-03-14 | Intel Corporation | Wafer-level diamond spreader |
JP2006147623A (ja) * | 2004-11-16 | 2006-06-08 | Tdk Corp | ウエハの切断方法 |
US7695564B1 (en) * | 2005-02-03 | 2010-04-13 | Hrl Laboratories, Llc | Thermal management substrate |
GB0505752D0 (en) * | 2005-03-21 | 2005-04-27 | Element Six Ltd | Diamond based substrate for gan devices |
US7422634B2 (en) * | 2005-04-07 | 2008-09-09 | Cree, Inc. | Three inch silicon carbide wafer with low warp, bow, and TTV |
JP2006295620A (ja) * | 2005-04-12 | 2006-10-26 | Pentax Corp | 固体撮像素子 |
US20070032176A1 (en) * | 2005-08-04 | 2007-02-08 | Chih-Ming Hsu | Method for polishing diamond wafers |
US7725183B1 (en) * | 2006-02-10 | 2010-05-25 | Pacesetter, Inc. | Implantable stimulation device equipped with a hardware elastic buffer |
DE102006023165B4 (de) * | 2006-05-17 | 2008-02-14 | Infineon Technologies Ag | Verfahren zur Herstellung eines akustischen Spiegels aus alternierend angeordneten Schichten hoher und niedriger akustischer Impedanz |
US7902039B2 (en) * | 2006-11-30 | 2011-03-08 | Sumco Corporation | Method for manufacturing silicon wafer |
US7579759B2 (en) * | 2007-06-11 | 2009-08-25 | City University Of Hong Kong | Surface acoustic wave (SAW) devices based on cubic boron nitride/diamond composite structures |
JP2009117653A (ja) * | 2007-11-07 | 2009-05-28 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8227350B2 (en) * | 2008-01-04 | 2012-07-24 | Advanced Diamond Technologies, Inc. | Controlling diamond film surfaces and layering |
CN101530982B (zh) * | 2009-04-13 | 2011-03-16 | 西安理工大学 | 一种改变晶片取向的研磨夹具 |
FR2992313B1 (fr) * | 2012-06-21 | 2014-11-07 | Eurokera | Article vitroceramique et procede de fabrication |
GB201321899D0 (en) * | 2013-12-11 | 2014-01-22 | Element Six Ltd | Post-synthesis processing of diamond and related super-hard materials |
TWI656944B (zh) * | 2014-05-14 | 2019-04-21 | 日商荏原製作所股份有限公司 | 研磨裝置 |
US9490116B2 (en) * | 2015-01-09 | 2016-11-08 | Applied Materials, Inc. | Gate stack materials for semiconductor applications for lithographic overlay improvement |
JP6717267B2 (ja) * | 2017-07-10 | 2020-07-01 | 株式会社Sumco | シリコンウェーハの製造方法 |
WO2019034728A1 (de) * | 2017-08-18 | 2019-02-21 | Gühring KG | Verfahren zum beschichten temperaturempfindlicher substrate mit polykristallinem diamant |
KR102628016B1 (ko) * | 2022-09-05 | 2024-01-23 | 김재중 | 각각 회전하는 메인 트레이 및 보조 트레이를 포함하는 연마 장치를 운용 방법 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE40137C (de) * | p. olivier - LECQ in Templeuve, Nord-Frankreich | Maschine zum Auskörnen von Aehren, Samenkapseln u. dergl | ||
FR2481980A1 (fr) * | 1980-05-08 | 1981-11-13 | Bieler Daniel | Machine de rectification de materiaux durs et notamment de quartz |
JPH0770456B2 (ja) * | 1986-04-25 | 1995-07-31 | 三菱電機株式会社 | 半導体装置の製造方法 |
US4863529A (en) | 1987-03-12 | 1989-09-05 | Sumitomo Electric Industries, Ltd. | Thin film single crystal diamond substrate |
JPS63256356A (ja) * | 1987-04-15 | 1988-10-24 | Hitachi Ltd | 研摩方法および装置 |
JPH0779958B2 (ja) | 1987-05-08 | 1995-08-30 | 住友電気工業株式会社 | 大型ダイヤモンドの合成方法 |
US5270028A (en) | 1988-02-01 | 1993-12-14 | Sumitomo Electric Industries, Ltd. | Diamond and its preparation by chemical vapor deposition method |
JPH0226900A (ja) * | 1988-07-15 | 1990-01-29 | Tosoh Corp | ダイヤモンド膜の研磨法 |
JPH02173264A (ja) * | 1988-12-26 | 1990-07-04 | Olympus Optical Co Ltd | 高硬度多層膜 |
JPH0355822A (ja) * | 1989-07-25 | 1991-03-11 | Shin Etsu Handotai Co Ltd | 半導体素子形成用基板の製造方法 |
US5273731A (en) * | 1989-09-14 | 1993-12-28 | General Electric Company | Substantially transparent free standing diamond films |
JPH03145900A (ja) * | 1989-11-01 | 1991-06-21 | Yamaha Corp | スピーカー用振動板 |
EP0487292B1 (de) | 1990-11-22 | 1996-02-14 | Sumitomo Electric Industries, Limited | Polykristallines Dimantwerkzeug und Verfahren für seine Herstellung |
JP3028660B2 (ja) | 1991-10-21 | 2000-04-04 | 住友電気工業株式会社 | ダイヤモンドヒートシンクの製造方法 |
US5069002A (en) * | 1991-04-17 | 1991-12-03 | Micron Technology, Inc. | Apparatus for endpoint detection during mechanical planarization of semiconductor wafers |
JP2719855B2 (ja) * | 1991-05-24 | 1998-02-25 | 信越半導体株式会社 | ウエーハ外周の鏡面面取り装置 |
JPH04358410A (ja) | 1991-06-05 | 1992-12-11 | Sumitomo Electric Ind Ltd | 表面弾性波素子及びその製造方法 |
US5240749A (en) * | 1991-08-27 | 1993-08-31 | University Of Central Florida | Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition |
US5270077A (en) | 1991-12-13 | 1993-12-14 | General Electric Company | Method for producing flat CVD diamond film |
JP3121102B2 (ja) | 1992-03-26 | 2000-12-25 | キヤノン株式会社 | 平板ダイヤモンド結晶、及びその形成方法 |
JP3252865B2 (ja) | 1992-09-11 | 2002-02-04 | 住友電気工業株式会社 | 表面弾性波素子および表面弾性波素子の製造方法 |
US5382809A (en) | 1992-09-14 | 1995-01-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device including semiconductor diamond |
US5562529A (en) * | 1992-10-08 | 1996-10-08 | Fujitsu Limited | Apparatus and method for uniformly polishing a wafer |
JPH06263595A (ja) | 1993-03-10 | 1994-09-20 | Canon Inc | ダイヤモンド被覆部材及びその製造方法 |
JP3774904B2 (ja) * | 1994-01-27 | 2006-05-17 | 住友電気工業株式会社 | 平坦なダイヤモンド膜の合成法とダイヤモンド自立膜及びダイヤモンド膜の研磨方法 |
DE69503285T2 (de) | 1994-04-07 | 1998-11-05 | Sumitomo Electric Industries | Diamantwafer und Verfahren zur Herstellung eines Diamantwafers |
DE69516035T2 (de) | 1994-05-23 | 2000-08-31 | Sumitomo Electric Industries | Verfharen zum Herstellen eines mit hartem Material bedeckten Halbleiters |
DE69508679T2 (de) | 1994-06-09 | 1999-08-12 | Sumitomo Electric Industries | Wafer und Verfahren zur Herstellung eines Wafers |
DE69535861D1 (de) | 1994-06-24 | 2008-11-27 | Sumitomo Electric Industries | Wafer und sein Herstellungsverfahren |
JP3045966B2 (ja) * | 1996-02-16 | 2000-05-29 | 株式会社荏原製作所 | ポリッシング装置および方法 |
US5738568A (en) * | 1996-10-04 | 1998-04-14 | International Business Machines Corporation | Flexible tilted wafer carrier |
JP3807807B2 (ja) * | 1997-02-27 | 2006-08-09 | 株式会社荏原製作所 | ポリッシング装置 |
JPH11277406A (ja) * | 1998-03-27 | 1999-10-12 | Ebara Corp | ポリッシング装置 |
JP2000005988A (ja) * | 1998-04-24 | 2000-01-11 | Ebara Corp | 研磨装置 |
-
1995
- 1995-04-27 DE DE69516035T patent/DE69516035T2/de not_active Expired - Lifetime
- 1995-04-27 DE DE69526129T patent/DE69526129T2/de not_active Expired - Lifetime
- 1995-04-27 EP EP98202653A patent/EP0878268B1/de not_active Expired - Lifetime
- 1995-04-27 EP EP95302845A patent/EP0684106B1/de not_active Expired - Lifetime
- 1995-05-09 IL IL11367095A patent/IL113670A0/xx unknown
- 1995-05-22 KR KR1019950013214A patent/KR0147144B1/ko not_active IP Right Cessation
-
1997
- 1997-06-13 US US08/874,536 patent/US5855998A/en not_active Expired - Lifetime
-
1998
- 1998-03-26 US US09/048,291 patent/US6193585B1/en not_active Expired - Fee Related
-
2000
- 2000-05-16 US US09/572,180 patent/US6428399B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0684106A2 (de) | 1995-11-29 |
EP0684106B1 (de) | 2000-04-05 |
KR950034573A (ko) | 1995-12-28 |
US5855998A (en) | 1999-01-05 |
EP0878268A2 (de) | 1998-11-18 |
DE69526129D1 (de) | 2002-05-02 |
KR0147144B1 (ko) | 1998-11-02 |
US6193585B1 (en) | 2001-02-27 |
DE69516035D1 (de) | 2000-05-11 |
IL113670A0 (en) | 1995-08-31 |
DE69526129T2 (de) | 2002-08-22 |
US6428399B1 (en) | 2002-08-06 |
EP0684106A3 (de) | 1996-08-21 |
EP0878268A3 (de) | 1998-12-09 |
EP0878268B1 (de) | 2002-03-27 |
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