DE69510300T2 - Epitaktisches Plättchen und Verfahren zu seiner Herstellung - Google Patents

Epitaktisches Plättchen und Verfahren zu seiner Herstellung

Info

Publication number
DE69510300T2
DE69510300T2 DE69510300T DE69510300T DE69510300T2 DE 69510300 T2 DE69510300 T2 DE 69510300T2 DE 69510300 T DE69510300 T DE 69510300T DE 69510300 T DE69510300 T DE 69510300T DE 69510300 T2 DE69510300 T2 DE 69510300T2
Authority
DE
Germany
Prior art keywords
manufacture
epitaxial plate
epitaxial
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69510300T
Other languages
English (en)
Other versions
DE69510300D1 (de
Inventor
Atsuto Sakata
Hisashi Masumura
Hideo Kudou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69510300D1 publication Critical patent/DE69510300D1/de
Application granted granted Critical
Publication of DE69510300T2 publication Critical patent/DE69510300T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
DE69510300T 1994-11-14 1995-11-09 Epitaktisches Plättchen und Verfahren zu seiner Herstellung Expired - Fee Related DE69510300T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06279515A JP3120825B2 (ja) 1994-11-14 1994-11-14 エピタキシャルウエーハ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69510300D1 DE69510300D1 (de) 1999-07-22
DE69510300T2 true DE69510300T2 (de) 1999-11-18

Family

ID=17612116

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510300T Expired - Fee Related DE69510300T2 (de) 1994-11-14 1995-11-09 Epitaktisches Plättchen und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (1) US5705423A (de)
EP (1) EP0711854B1 (de)
JP (1) JP3120825B2 (de)
KR (1) KR100384552B1 (de)
DE (1) DE69510300T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19960823A1 (de) * 1999-12-16 2001-07-05 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
DE10025871A1 (de) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3120825B2 (ja) * 1994-11-14 2000-12-25 信越半導体株式会社 エピタキシャルウエーハ及びその製造方法
JP3491463B2 (ja) * 1996-08-19 2004-01-26 信越半導体株式会社 シリコン鏡面ウェーハの製造方法およびシリコンウェーハの加工装置
FR2774511B1 (fr) * 1998-01-30 2002-10-11 Commissariat Energie Atomique Substrat compliant en particulier pour un depot par hetero-epitaxie
US20010001384A1 (en) * 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
US6214704B1 (en) * 1998-12-16 2001-04-10 Memc Electronic Materials, Inc. Method of processing semiconductor wafers to build in back surface damage
KR100701825B1 (ko) * 1999-04-20 2007-03-30 신에쯔 한도타이 가부시키가이샤 실리콘 에피택셜 웨이퍼 및 그 제조방법
DE19938340C1 (de) * 1999-08-13 2001-02-15 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
JP2001068477A (ja) * 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
DE10004578C1 (de) * 2000-02-03 2001-07-26 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante
US6521470B1 (en) * 2001-10-31 2003-02-18 United Microelectronics Corp. Method of measuring thickness of epitaxial layer
US7594967B2 (en) * 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
EP1605498A1 (de) * 2004-06-11 2005-12-14 S.O.I. Tec Silicon on Insulator Technologies S.A. Verfahren zur Herstellung eines Halbleiterwafers
JP5087855B2 (ja) * 2006-04-05 2012-12-05 株式会社Ｓｕｍｃｏ 熱処理評価用ウェーハ、熱処理評価方法、および半導体ウェーハの製造方法
JP4911042B2 (ja) * 2008-01-18 2012-04-04 信越半導体株式会社 単結晶ウエーハ及びエピタキシャルウエーハ
TWI498954B (zh) 2009-08-21 2015-09-01 Sumco Corp 磊晶矽晶圓的製造方法
KR101104635B1 (ko) * 2009-09-25 2012-01-12 가부시키가이샤 사무코 에피택셜 실리콘 웨이퍼의 제조 방법
TWI508327B (zh) * 2010-03-05 2015-11-11 Namiki Precision Jewel Co Ltd An internal modified substrate for epitaxial growth, a multilayer film internal modified substrate, a semiconductor device, a semiconductor bulk substrate, and the like
CN110767531B (zh) * 2018-07-26 2021-11-30 上海新昇半导体科技有限公司 外延片的制备方法
CN117561143A (zh) * 2021-06-01 2024-02-13 信越半导体株式会社 双面抛光方法及双面抛光硅晶圆

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045301A (ja) * 1983-08-23 1985-03-11 株式会社小崎 靴の中芯材の製造法
JPS61147522A (ja) * 1984-12-20 1986-07-05 Sanyo Electric Co Ltd 半導体基板の製造方法
JPS61208212A (ja) * 1985-03-12 1986-09-16 Nec Corp 半導体基板の製造方法
JPS6271214A (ja) * 1985-09-25 1987-04-01 Toshiba Corp 半導体基板の接合方法
JPH0661681B2 (ja) * 1987-07-06 1994-08-17 三菱マテリアル株式会社 鏡面ウェ−ハの製造方法
JPS6487148A (en) * 1987-09-28 1989-03-31 Toshiba Corp Polishing method
JPH0482288A (ja) * 1990-07-25 1992-03-16 Denki Kagaku Kogyo Kk 半導体レーザ
JP2757069B2 (ja) * 1990-08-03 1998-05-25 信越半導体株式会社 エピタキシャル成長用半導体ウェール，およびその製造方法
JPH0645301A (ja) * 1992-07-22 1994-02-18 Hitachi Ltd 半導体素子用シリコンウェハ及びその製造方法
JPH06181193A (ja) * 1992-12-15 1994-06-28 Hitachi Ltd 半導体ウエハの製造方法およびその半導体ウエハを用いた半導体装置
US5360509A (en) * 1993-03-08 1994-11-01 Gi Corporation Low cost method of fabricating epitaxial semiconductor devices
JP3120825B2 (ja) * 1994-11-14 2000-12-25 信越半導体株式会社 エピタキシャルウエーハ及びその製造方法
JPH096247A (ja) * 1995-06-20 1997-01-10 Fujitsu General Ltd 通風機能付シールド装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19960823A1 (de) * 1999-12-16 2001-07-05 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
DE19960823B4 (de) * 1999-12-16 2007-04-12 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung
DE10025871A1 (de) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date
EP0711854A1 (de) 1996-05-15
US5705423A (en) 1998-01-06
KR100384552B1 (ko) 2003-08-19
EP0711854B1 (de) 1999-06-16
DE69510300D1 (de) 1999-07-22
JP3120825B2 (ja) 2000-12-25
JPH08139033A (ja) 1996-05-31
KR960017938A (ko) 1996-06-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee