JPS6487148A - Polishing method - Google Patents

Polishing method

Info

Publication number
JPS6487148A
JPS6487148A JP62240810A JP24081087A JPS6487148A JP S6487148 A JPS6487148 A JP S6487148A JP 62240810 A JP62240810 A JP 62240810A JP 24081087 A JP24081087 A JP 24081087A JP S6487148 A JPS6487148 A JP S6487148A
Authority
JP
Japan
Prior art keywords
wafer
approximate
polishing
artificial leather
rmax
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62240810A
Other languages
Japanese (ja)
Inventor
Masaaki Kuniyoshi
Togo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62240810A priority Critical patent/JPS6487148A/en
Publication of JPS6487148A publication Critical patent/JPS6487148A/en
Pending legal-status Critical Current

Links

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PURPOSE:To enable extremely high-precise machining of a mirror surface, by a method wherein, in the middle or after polishing of a substance to be machined, e.g. Si wafers, by means of an artificial leather, polishing is performed by a tin surface plate serving as a polisher. CONSTITUTION:A wafer 6 adhered to a mount plate 9 is pressed against a polisher 8, e.g., artificial leather, laminated to a surface plate 7, e.g., aluminum, and by using a polishing agent in which SiO2 of approximate 0.01mum is dispersed in a colloidal manner in a weak alkaline water solution, lapping is effected so that surface roughness is reduced from 2-3mum to approximate 1mum Rmax. The wafer is finished by diamond cutting to form a high-precise complete plane. The wafer 6 adhered to the mount plate 19 is pressed against a surface plate 14 made of Sn in which a helical groove 15 is formed, and by using a water solution polishing agent 16 containing 10% SiO with a grain size of approximate 0.01mum, the wafer is finished to 0.7mum by means of LTV (Local Thickness Variation). Thereafter, by using the artificial leather, it is polished to surface roughness of 0.002mum Rmax to remove haze.
JP62240810A 1987-09-28 1987-09-28 Polishing method Pending JPS6487148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62240810A JPS6487148A (en) 1987-09-28 1987-09-28 Polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240810A JPS6487148A (en) 1987-09-28 1987-09-28 Polishing method

Publications (1)

Publication Number Publication Date
JPS6487148A true JPS6487148A (en) 1989-03-31

Family

ID=17065020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62240810A Pending JPS6487148A (en) 1987-09-28 1987-09-28 Polishing method

Country Status (1)

Country Link
JP (1) JPS6487148A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0387558U (en) * 1989-12-18 1991-09-05
US5705423A (en) * 1994-11-14 1998-01-06 Shin-Etsu Handotai Co., Ltd. Epitaxial wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0387558U (en) * 1989-12-18 1991-09-05
US5705423A (en) * 1994-11-14 1998-01-06 Shin-Etsu Handotai Co., Ltd. Epitaxial wafer

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