JPS642859A - Polishing method for semiconductor substrate - Google Patents

Polishing method for semiconductor substrate

Info

Publication number
JPS642859A
JPS642859A JP62158904A JP15890487A JPS642859A JP S642859 A JPS642859 A JP S642859A JP 62158904 A JP62158904 A JP 62158904A JP 15890487 A JP15890487 A JP 15890487A JP S642859 A JPS642859 A JP S642859A
Authority
JP
Japan
Prior art keywords
polishing
agent
pressure
wafer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62158904A
Other languages
Japanese (ja)
Other versions
JPH012859A (en
Inventor
Akira Nieda
Hiroshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62158904A priority Critical patent/JPS642859A/en
Publication of JPH012859A publication Critical patent/JPH012859A/en
Publication of JPS642859A publication Critical patent/JPS642859A/en
Pending legal-status Critical Current

Links

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To finish a semiconductor substrate in a good further stable state with no flaw and blur by using a polishing agent adding a fine grain-state physical abrasive agent to a chemical abrasive agent so as to generate the pressure of polishing to a light value. CONSTITUTION:Adding a grain-state polishing agent (for instance, colloidal silica) to a chemical abrasive agent, mechanically light physical abrasive action is provided. This polishing agent prevents by its physical abrasive action the surface of a wafer, being polished, from bluring. As a result, eliminating the necessity for high increasing the pressure of polishing, it can be performed by a light pressure. In this way, the polishing agent, applying a lighter pressure of polishing, causes no generation of damage and a flaw given to the wafer when it is polished, thus forming a better finished surface of polishing of the wafer.
JP62158904A 1987-06-26 1987-06-26 Polishing method for semiconductor substrate Pending JPS642859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62158904A JPS642859A (en) 1987-06-26 1987-06-26 Polishing method for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62158904A JPS642859A (en) 1987-06-26 1987-06-26 Polishing method for semiconductor substrate

Publications (2)

Publication Number Publication Date
JPH012859A JPH012859A (en) 1989-01-06
JPS642859A true JPS642859A (en) 1989-01-06

Family

ID=15681898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62158904A Pending JPS642859A (en) 1987-06-26 1987-06-26 Polishing method for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS642859A (en)

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