DE69505416D1 - Fermi-schwellenspannung-feldeffekttransistor in einer geformten wanne und verfahren zur herstellung - Google Patents
Fermi-schwellenspannung-feldeffekttransistor in einer geformten wanne und verfahren zur herstellungInfo
- Publication number
- DE69505416D1 DE69505416D1 DE69505416T DE69505416T DE69505416D1 DE 69505416 D1 DE69505416 D1 DE 69505416D1 DE 69505416 T DE69505416 T DE 69505416T DE 69505416 T DE69505416 T DE 69505416T DE 69505416 D1 DE69505416 D1 DE 69505416D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- threshold voltage
- field effect
- effect transistor
- voltage field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/351,643 US5543654A (en) | 1992-01-28 | 1994-12-07 | Contoured-tub fermi-threshold field effect transistor and method of forming same |
PCT/US1995/015777 WO1996018211A1 (en) | 1994-12-07 | 1995-12-05 | Contoured-tub fermi-threshold field effect transistor and method of forming same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69505416D1 true DE69505416D1 (de) | 1998-11-19 |
DE69505416T2 DE69505416T2 (de) | 1999-06-17 |
Family
ID=23381727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69505416T Expired - Lifetime DE69505416T2 (de) | 1994-12-07 | 1995-12-05 | Fermi-schwellenspannung-feldeffekttransistor in einer geformten wanne und verfahren zur herstellung |
Country Status (8)
Country | Link |
---|---|
US (1) | US5543654A (de) |
EP (1) | EP0796507B1 (de) |
JP (2) | JP4132070B2 (de) |
KR (1) | KR100365992B1 (de) |
AU (1) | AU694308B2 (de) |
CA (1) | CA2206346C (de) |
DE (1) | DE69505416T2 (de) |
WO (1) | WO1996018211A1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5814869A (en) * | 1992-01-28 | 1998-09-29 | Thunderbird Technologies, Inc. | Short channel fermi-threshold field effect transistors |
US5786620A (en) * | 1992-01-28 | 1998-07-28 | Thunderbird Technologies, Inc. | Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same |
US6097205A (en) * | 1997-02-14 | 2000-08-01 | Semitest, Inc. | Method and apparatus for characterizing a specimen of semiconductor material |
DE19743342C2 (de) * | 1997-09-30 | 2002-02-28 | Infineon Technologies Ag | Feldeffekttransistor hoher Packungsdichte und Verfahren zu seiner Herstellung |
US7804115B2 (en) | 1998-02-25 | 2010-09-28 | Micron Technology, Inc. | Semiconductor constructions having antireflective portions |
US6274292B1 (en) | 1998-02-25 | 2001-08-14 | Micron Technology, Inc. | Semiconductor processing methods |
US6268282B1 (en) | 1998-09-03 | 2001-07-31 | Micron Technology, Inc. | Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks |
US6281100B1 (en) | 1998-09-03 | 2001-08-28 | Micron Technology, Inc. | Semiconductor processing methods |
US20020036328A1 (en) * | 1998-11-16 | 2002-03-28 | William R. Richards, Jr. | Offset drain fermi-threshold field effect transistors |
US6828683B2 (en) | 1998-12-23 | 2004-12-07 | Micron Technology, Inc. | Semiconductor devices, and semiconductor processing methods |
US7235499B1 (en) * | 1999-01-20 | 2007-06-26 | Micron Technology, Inc. | Semiconductor processing methods |
US7067414B1 (en) | 1999-09-01 | 2006-06-27 | Micron Technology, Inc. | Low k interlevel dielectric layer fabrication methods |
US6369408B1 (en) * | 1999-10-06 | 2002-04-09 | Agere Systems Guardian Corp. | GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same |
US6440860B1 (en) | 2000-01-18 | 2002-08-27 | Micron Technology, Inc. | Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride |
US6555872B1 (en) * | 2000-11-22 | 2003-04-29 | Thunderbird Technologies, Inc. | Trench gate fermi-threshold field effect transistors |
DE10061529A1 (de) * | 2000-12-11 | 2002-06-27 | Infineon Technologies Ag | Feldeffekt gesteuertes Halbleiterbauelement und Verfahren |
US6891266B2 (en) * | 2002-02-14 | 2005-05-10 | Mia-Com | RF transition for an area array package |
US6911695B2 (en) * | 2002-09-19 | 2005-06-28 | Intel Corporation | Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain |
US20060138548A1 (en) * | 2004-12-07 | 2006-06-29 | Thunderbird Technologies, Inc. | Strained silicon, gate engineered Fermi-FETs |
US20070001199A1 (en) * | 2005-06-30 | 2007-01-04 | Thunderbird Technologies, Inc. | Circuits and Integrated Circuits Including Field Effect Transistors Having Differing Body Effects |
US20090134476A1 (en) * | 2007-11-13 | 2009-05-28 | Thunderbird Technologies, Inc. | Low temperature coefficient field effect transistors and design and fabrication methods |
US20090134455A1 (en) * | 2007-11-27 | 2009-05-28 | Vanguard International Semiconductor Corporation | Semiconductor device and manufacturing method |
US20100123206A1 (en) * | 2008-11-18 | 2010-05-20 | Thunderbird Technologies, Inc. | Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated |
CN103187273B (zh) * | 2011-12-31 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管及其制作方法 |
CN109585541B (zh) * | 2018-12-27 | 2024-03-26 | 西安中车永电电气有限公司 | 一种埋沟式SiC IGBT常关器件及其制备方法 |
Family Cites Families (44)
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GB1261723A (en) * | 1968-03-11 | 1972-01-26 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
US3789504A (en) * | 1971-10-12 | 1974-02-05 | Gte Laboratories Inc | Method of manufacturing an n-channel mos field-effect transistor |
US3872491A (en) * | 1973-03-08 | 1975-03-18 | Sprague Electric Co | Asymmetrical dual-gate FET |
US4042945A (en) * | 1974-02-28 | 1977-08-16 | Westinghouse Electric Corporation | N-channel MOS transistor |
DE2801085A1 (de) * | 1977-01-11 | 1978-07-13 | Zaidan Hojin Handotai Kenkyu | Statischer induktionstransistor |
US4092548A (en) * | 1977-03-15 | 1978-05-30 | International Business Machines Corporation | Substrate bias modulation to improve mosfet circuit performance |
US4108686A (en) * | 1977-07-22 | 1978-08-22 | Rca Corp. | Method of making an insulated gate field effect transistor by implanted double counterdoping |
JPS5587481A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Mis type semiconductor device |
JPS5587483A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Mis type semiconductor device |
US4274105A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | MOSFET Substrate sensitivity control |
JPS5691473A (en) * | 1979-12-25 | 1981-07-24 | Fujitsu Ltd | Semiconductor |
JPS5710268A (en) * | 1980-11-25 | 1982-01-19 | Nec Corp | Semiconductor device |
JPS5816565A (ja) * | 1981-07-22 | 1983-01-31 | Hitachi Ltd | 絶縁ゲ−ト形電界効果トランジスタ |
JPS5833870A (ja) * | 1981-08-24 | 1983-02-28 | Hitachi Ltd | 半導体装置 |
DE3138747A1 (de) * | 1981-09-29 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Selbstsperrender feldeffekt-transistor des verarmungstyps |
SU1097139A1 (ru) * | 1981-12-18 | 1987-04-15 | Организация П/Я А-1889 | Полевой транзистор |
USRE32800E (en) * | 1981-12-30 | 1988-12-13 | Sgs-Thomson Microelectronics, Inc. | Method of making mosfet by multiple implantations followed by a diffusion step |
US4491807A (en) * | 1982-05-20 | 1985-01-01 | Rca Corporation | FET Negative resistance circuits |
JPS5929460A (ja) * | 1982-08-11 | 1984-02-16 | Seiko Epson Corp | 薄膜トランジスタ |
US4697198A (en) * | 1984-08-22 | 1987-09-29 | Hitachi, Ltd. | MOSFET which reduces the short-channel effect |
JPS6153775A (ja) * | 1984-08-24 | 1986-03-17 | Oki Electric Ind Co Ltd | 半導体集積回路装置 |
JPS61160975A (ja) * | 1985-01-08 | 1986-07-21 | Matsushita Electric Ind Co Ltd | Mos型電界効果トランジスタ |
JPS61185973A (ja) * | 1985-02-13 | 1986-08-19 | Nec Corp | 半導体装置 |
JPS61292358A (ja) * | 1985-06-19 | 1986-12-23 | Fujitsu Ltd | Mis型電界効果トランジスタの製造方法 |
US4701775A (en) * | 1985-10-21 | 1987-10-20 | Motorola, Inc. | Buried n- channel implant for NMOS transistors |
JPS62128175A (ja) * | 1985-11-29 | 1987-06-10 | Hitachi Ltd | 半導体装置 |
JPS62219966A (ja) * | 1986-03-22 | 1987-09-28 | Toshiba Corp | 半導体装置 |
JPS62248255A (ja) * | 1986-04-21 | 1987-10-29 | Nissan Motor Co Ltd | 薄膜トランジスタ |
US4771012A (en) * | 1986-06-13 | 1988-09-13 | Matsushita Electric Industrial Co., Ltd. | Method of making symmetrically controlled implanted regions using rotational angle of the substrate |
JPS6353975A (ja) * | 1986-08-22 | 1988-03-08 | Nec Corp | Misトランジスタ及びその製造方法 |
US5192990A (en) * | 1986-09-18 | 1993-03-09 | Eastman Kodak Company | Output circuit for image sensor |
DE3737144A1 (de) * | 1986-11-10 | 1988-05-11 | Hewlett Packard Co | Metalloxid-halbleiter-feldeffekttransistor (mosfet) und verfahren zu seiner herstellung |
EP0274278B1 (de) * | 1987-01-05 | 1994-05-25 | Seiko Instruments Inc. | MOS-Feldeffekttransistor und dessen Herstellungsmethode |
US4928156A (en) * | 1987-07-13 | 1990-05-22 | Motorola, Inc. | N-channel MOS transistors having source/drain regions with germanium |
US4907048A (en) * | 1987-11-23 | 1990-03-06 | Xerox Corporation | Double implanted LDD transistor self-aligned with gate |
US4899202A (en) * | 1988-07-08 | 1990-02-06 | Texas Instruments Incorporated | High performance silicon-on-insulator transistor with body node to source node connection |
US4990974A (en) * | 1989-03-02 | 1991-02-05 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor |
JP2578662B2 (ja) * | 1989-05-19 | 1997-02-05 | 三洋電機株式会社 | 半導体装置の製造方法 |
JPH0714065B2 (ja) * | 1990-03-19 | 1995-02-15 | 株式会社東芝 | Mos型半導体装置及びその製造方法 |
US5440160A (en) * | 1992-01-28 | 1995-08-08 | Thunderbird Technologies, Inc. | High saturation current, low leakage current fermi threshold field effect transistor |
US5369295A (en) * | 1992-01-28 | 1994-11-29 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor with reduced gate and diffusion capacitance |
US5194923A (en) * | 1992-01-28 | 1993-03-16 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor with reduced gate and diffusion capacitance |
EP0686308B1 (de) * | 1993-02-23 | 2002-01-16 | Thunderbird Technologies, Inc. | Fermi-schwellenspannungs-feldeffekttransistor mit hohem sättigungsstrom und niedrigem leckstrom |
US5371396A (en) * | 1993-07-02 | 1994-12-06 | Thunderbird Technologies, Inc. | Field effect transistor having polycrystalline silicon gate junction |
-
1994
- 1994-12-07 US US08/351,643 patent/US5543654A/en not_active Expired - Lifetime
-
1995
- 1995-12-05 AU AU45089/96A patent/AU694308B2/en not_active Ceased
- 1995-12-05 WO PCT/US1995/015777 patent/WO1996018211A1/en active IP Right Grant
- 1995-12-05 EP EP95943673A patent/EP0796507B1/de not_active Expired - Lifetime
- 1995-12-05 JP JP51771596A patent/JP4132070B2/ja not_active Expired - Fee Related
- 1995-12-05 KR KR1019970703792A patent/KR100365992B1/ko not_active IP Right Cessation
- 1995-12-05 DE DE69505416T patent/DE69505416T2/de not_active Expired - Lifetime
- 1995-12-05 CA CA002206346A patent/CA2206346C/en not_active Expired - Fee Related
-
2008
- 2008-01-09 JP JP2008002517A patent/JP2008124492A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
AU694308B2 (en) | 1998-07-16 |
CA2206346A1 (en) | 1996-06-13 |
KR100365992B1 (ko) | 2003-08-02 |
DE69505416T2 (de) | 1999-06-17 |
US5543654A (en) | 1996-08-06 |
WO1996018211A1 (en) | 1996-06-13 |
JPH10510398A (ja) | 1998-10-06 |
EP0796507A1 (de) | 1997-09-24 |
JP2008124492A (ja) | 2008-05-29 |
CA2206346C (en) | 2007-08-07 |
JP4132070B2 (ja) | 2008-08-13 |
AU4508996A (en) | 1996-06-26 |
EP0796507B1 (de) | 1998-10-14 |
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