DE69429225D1 - Ruhestromprüfbarer RAM - Google Patents

Ruhestromprüfbarer RAM

Info

Publication number
DE69429225D1
DE69429225D1 DE69429225T DE69429225T DE69429225D1 DE 69429225 D1 DE69429225 D1 DE 69429225D1 DE 69429225 T DE69429225 T DE 69429225T DE 69429225 T DE69429225 T DE 69429225T DE 69429225 D1 DE69429225 D1 DE 69429225D1
Authority
DE
Germany
Prior art keywords
testable
ram
quiescent current
cells
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69429225T
Other languages
English (en)
Other versions
DE69429225T2 (de
Inventor
Mamoj Sachdev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69429225D1 publication Critical patent/DE69429225D1/de
Publication of DE69429225T2 publication Critical patent/DE69429225T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Static Random-Access Memory (AREA)
  • Tests Of Electronic Circuits (AREA)
DE69429225T 1993-09-01 1994-08-31 Ruhestromprüfbarer RAM Expired - Lifetime DE69429225T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93202555 1993-09-01

Publications (2)

Publication Number Publication Date
DE69429225D1 true DE69429225D1 (de) 2002-01-10
DE69429225T2 DE69429225T2 (de) 2002-08-14

Family

ID=8214072

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69429225T Expired - Lifetime DE69429225T2 (de) 1993-09-01 1994-08-31 Ruhestromprüfbarer RAM

Country Status (7)

Country Link
US (1) US5491665A (de)
JP (1) JP3690827B2 (de)
KR (1) KR100339321B1 (de)
DE (1) DE69429225T2 (de)
MY (1) MY131610A (de)
SG (1) SG48339A1 (de)
TW (1) TW260788B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07159496A (ja) * 1993-10-12 1995-06-23 At & T Global Inf Solutions Internatl Inc 集積回路の検査のための装置及びその方法
EP0691612A1 (de) * 1994-07-07 1996-01-10 International Business Machines Corporation Prüfungsschaltkreis eingebetteter Speichermatrizen in gemischter Logistik und Speicherchips
KR0142638B1 (ko) * 1994-12-27 1998-08-17 김주용 플래쉬 메모리 장치
JP2783243B2 (ja) * 1996-02-06 1998-08-06 日本電気株式会社 Ｃｍｏｓ集積回路の故障検出方法及び装置
JPH09292438A (ja) 1996-04-30 1997-11-11 Toshiba Corp Ｃｍｏｓ集積回路装置、その検査方法及び検査装置
US5745405A (en) * 1996-08-26 1998-04-28 Taiwan Semiconductor Manufacturing Company, Ltd Process leakage evaluation and measurement method
US6551857B2 (en) * 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5835429A (en) * 1997-05-09 1998-11-10 Lsi Logic Corporation Data retention weak write circuit and method of using same
JPH11260924A (ja) * 1998-03-10 1999-09-24 Mitsubishi Electric Corp 半導体集積回路装置のテスト方法
ITMI981564A1 (it) * 1998-07-09 2000-01-09 St Microelectronics Srl Memoria non volatile in grado di eseguire un programma autonomamente
US6141272A (en) * 1999-09-02 2000-10-31 Micron Technology, Inc. Method and apparatus for programmable control signal generation for a semiconductor device
JP2001283598A (ja) * 2000-03-29 2001-10-12 Nec Kansai Ltd Ｓｒａｍペレットにおける冗長回路切り替えのための検査方法
US6208572B1 (en) * 2000-06-12 2001-03-27 International Business Machines Corporation Semiconductor memory device having resistive bitline contact testing
US6549483B2 (en) * 2001-03-30 2003-04-15 Atmos Corporation RAM having dynamically switchable access modes
US6681350B2 (en) * 2001-05-05 2004-01-20 Cadence Design Systems, Inc. Method and apparatus for testing memory cells for data retention faults
US7053647B2 (en) * 2004-05-07 2006-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of detecting potential bridging effects between conducting lines in an integrated circuit
US7216270B1 (en) 2004-05-14 2007-05-08 National Semiconductor Corporation System and method for providing testing and failure analysis of integrated circuit memory devices
DE102004040750B4 (de) * 2004-08-23 2008-03-27 Qimonda Ag Speicherzellenanordnung mit Speicherzellen vom CBRAM-Typ und Verfahren zum Programmieren derselben
US7855924B2 (en) * 2006-05-19 2010-12-21 Arm Limited Data processing memory circuit having pull-down circuit with on/off configuration
US20080198674A1 (en) * 2007-02-21 2008-08-21 Jan Keller Method of testing an integrated circuit, method of determining defect resistivity changing cells, testing device, and computer program adapted to perform a method for testing an integrated circuit
KR20090002849A (ko) * 2007-07-04 2009-01-09 삼성전자주식회사 비트라인 누설 전류를 검출하는 메모리 장치
US8526252B2 (en) * 2009-03-17 2013-09-03 Seagate Technology Llc Quiescent testing of non-volatile memory array
US10437557B2 (en) * 2018-01-31 2019-10-08 Micron Technology, Inc. Determination of a match between data values stored by several arrays

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2812004B2 (ja) * 1991-06-27 1998-10-15 日本電気株式会社 スタティック型ランダムアクセスメモリ装置
KR940006676B1 (ko) * 1991-10-14 1994-07-25 삼성전자 주식회사 시험회로를 내장한 기억용 반도체 집적회로

Also Published As

Publication number Publication date
US5491665A (en) 1996-02-13
KR950009742A (ko) 1995-04-24
DE69429225T2 (de) 2002-08-14
SG48339A1 (en) 1998-04-17
TW260788B (de) 1995-10-21
JP3690827B2 (ja) 2005-08-31
JPH0785700A (ja) 1995-03-31
MY131610A (en) 2007-08-30
KR100339321B1 (ko) 2002-11-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL