DE69412360T2 - Energieleitungsverbindungsschaltung und entsprechender Schalter mit integrierter Schaltung - Google Patents
Energieleitungsverbindungsschaltung und entsprechender Schalter mit integrierter SchaltungInfo
- Publication number
- DE69412360T2 DE69412360T2 DE69412360T DE69412360T DE69412360T2 DE 69412360 T2 DE69412360 T2 DE 69412360T2 DE 69412360 T DE69412360 T DE 69412360T DE 69412360 T DE69412360 T DE 69412360T DE 69412360 T2 DE69412360 T2 DE 69412360T2
- Authority
- DE
- Germany
- Prior art keywords
- power line
- line connection
- corresponding switch
- circuit
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12627193 | 1993-05-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69412360D1 DE69412360D1 (de) | 1998-09-17 |
DE69412360T2 true DE69412360T2 (de) | 1999-04-22 |
Family
ID=14931068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69412360T Expired - Lifetime DE69412360T2 (de) | 1993-05-27 | 1994-05-26 | Energieleitungsverbindungsschaltung und entsprechender Schalter mit integrierter Schaltung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5650741A (de) |
EP (1) | EP0627807B1 (de) |
KR (1) | KR0161308B1 (de) |
DE (1) | DE69412360T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5870573A (en) * | 1996-10-18 | 1999-02-09 | Hewlett-Packard Company | Transistor switch used to isolate bus devices and/or translate bus voltage levels |
JP3378457B2 (ja) | 1997-02-26 | 2003-02-17 | 株式会社東芝 | 半導体装置 |
TW423162B (en) * | 1997-02-27 | 2001-02-21 | Toshiba Corp | Power voltage supplying circuit and semiconductor memory including the same |
KR100281336B1 (ko) * | 1998-10-21 | 2001-03-02 | 구본준 | 쉬프트 레지스터 회로 |
FR2837996A1 (fr) * | 2002-03-29 | 2003-10-03 | Koninkl Philips Electronics Nv | Convertisseur de tension a transistors mos |
JP3902769B2 (ja) * | 2003-08-29 | 2007-04-11 | 松下電器産業株式会社 | 降圧電圧出力回路 |
FR2874468B1 (fr) * | 2004-08-17 | 2007-01-05 | Atmel Nantes Sa Sa | Dispositif d'aiguillage d'au moins deux tensions, circuit electronique et memoire correspondants |
JP4440058B2 (ja) | 2004-09-28 | 2010-03-24 | パナソニック株式会社 | 半導体集積回路 |
KR100571646B1 (ko) | 2005-03-31 | 2006-04-17 | 주식회사 하이닉스반도체 | 파워 다운 모드 반도체 소자 |
US7382168B2 (en) * | 2005-08-30 | 2008-06-03 | Agere Systems Inc. | Buffer circuit with multiple voltage range |
US7436238B2 (en) * | 2006-02-13 | 2008-10-14 | Texas Instruments Deutschland Gmbh | Integrated voltage switching circuit |
US7746154B2 (en) | 2006-09-27 | 2010-06-29 | Atmel Corporation | Multi-voltage multiplexer system |
US7849336B1 (en) * | 2007-04-17 | 2010-12-07 | Nvidia Corporation | Boost voltage generation |
TWI451424B (zh) * | 2009-04-17 | 2014-09-01 | Mstar Semiconductor Inc | 應用於快閃記憶體之保護電路及電源系統 |
JP5259505B2 (ja) | 2009-06-26 | 2013-08-07 | 株式会社東芝 | 半導体記憶装置 |
TWI491124B (zh) * | 2010-11-29 | 2015-07-01 | Hon Hai Prec Ind Co Ltd | 電源轉接裝置 |
JP6481553B2 (ja) * | 2015-07-28 | 2019-03-13 | 株式会社デンソー | スイッチング素子駆動回路 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3902078A (en) * | 1974-04-01 | 1975-08-26 | Crystal Ind Inc | Analog switch |
US4316243A (en) * | 1979-12-17 | 1982-02-16 | General Electric Company | Power FET inverter drive circuit |
US4420700A (en) * | 1981-05-26 | 1983-12-13 | Motorola Inc. | Semiconductor current regulator and switch |
JPS5912622A (ja) * | 1982-07-13 | 1984-01-23 | Toshiba Corp | 電子スイッチ回路 |
USRE32526E (en) * | 1984-06-25 | 1987-10-20 | Gated solid state FET relay | |
JPS6159911A (ja) * | 1984-08-30 | 1986-03-27 | Nec Corp | 切換スイツチ回路 |
GB8713384D0 (en) * | 1987-06-08 | 1987-07-15 | Philips Electronic Associated | Driving semiconductor device |
GB8713388D0 (en) * | 1987-06-08 | 1987-07-15 | Philips Electronic Associated | Semiconductor device |
IT1227561B (it) * | 1988-11-07 | 1991-04-16 | Sgs Thomson Microelectronics | Dispositivo circuitale, a ridotto numero di componenti, per l'accensione simultanea di una pluralita' di transistori di potenza |
US4877982A (en) * | 1989-01-23 | 1989-10-31 | Honeywell Inc. | MOSFET turn-on/off circuit |
FR2644651B1 (fr) * | 1989-03-15 | 1991-07-05 | Sgs Thomson Microelectronics | Circuit de commande de transistor mos de puissance sur charge inductive |
US4992683A (en) * | 1989-09-28 | 1991-02-12 | Motorola, Inc. | Load driver with reduced dissipation under reverse-battery conditions |
US5023474A (en) * | 1989-11-08 | 1991-06-11 | National Semiconductor Corp. | Adaptive gate charge circuit for power FETs |
JPH03158018A (ja) * | 1989-11-15 | 1991-07-08 | Nec Corp | 入力回路 |
US5005061A (en) * | 1990-02-05 | 1991-04-02 | Motorola, Inc. | Avalanche stress protected semiconductor device having variable input impedance |
US5111084A (en) * | 1990-05-31 | 1992-05-05 | Westinghouse Electric Corp. | Low loss drain pulser circuit for solid state microwave power amplifiers |
KR930003929B1 (ko) * | 1990-08-09 | 1993-05-15 | 삼성전자 주식회사 | 데이타 출력버퍼 |
JP3028840B2 (ja) * | 1990-09-19 | 2000-04-04 | 株式会社日立製作所 | バイポーラトランジスタとmosトランジスタの複合回路、及びそれを用いた半導体集積回路装置 |
US5115143A (en) * | 1991-08-08 | 1992-05-19 | International Business Machines | Efficient P-channel FET drive circuit |
FR2683687B1 (fr) * | 1991-11-13 | 1994-03-04 | Nokia Consumer Electronics Franc | Interrupteur de puissance a commutateur mos. |
US5258662A (en) * | 1992-04-06 | 1993-11-02 | Linear Technology Corp. | Micropower gate charge pump for power MOSFETS |
US5365118A (en) * | 1992-06-04 | 1994-11-15 | Linear Technology Corp. | Circuit for driving two power mosfets in a half-bridge configuration |
EP0582125B1 (de) * | 1992-08-04 | 1998-01-28 | Siemens Aktiengesellschaft | Ansteuerschaltung für einen Leistungs-MOSFET mit sourceseitiger Last |
JP3194798B2 (ja) * | 1992-10-30 | 2001-08-06 | オリンパス光学工業株式会社 | クランプ機能付きスイッチ回路 |
US5321313A (en) * | 1993-01-07 | 1994-06-14 | Texas Instruments Incorporated | Controlled power MOSFET switch-off circuit |
US5298817A (en) * | 1993-02-09 | 1994-03-29 | At&T Bell Laboratories | High-frequency solid-state relay |
US5510747A (en) * | 1993-11-30 | 1996-04-23 | Siliconix Incorporated | Gate drive technique for a bidirectional blocking lateral MOSFET |
-
1994
- 1994-05-26 DE DE69412360T patent/DE69412360T2/de not_active Expired - Lifetime
- 1994-05-26 EP EP94108146A patent/EP0627807B1/de not_active Expired - Lifetime
- 1994-05-27 KR KR1019940011617A patent/KR0161308B1/ko not_active IP Right Cessation
-
1996
- 1996-03-27 US US08/622,933 patent/US5650741A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0627807B1 (de) | 1998-08-12 |
US5650741A (en) | 1997-07-22 |
EP0627807A2 (de) | 1994-12-07 |
EP0627807A3 (de) | 1995-05-10 |
KR940027249A (ko) | 1994-12-10 |
KR0161308B1 (ko) | 1999-03-20 |
DE69412360D1 (de) | 1998-09-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP Owner name: KYUSHU FUJITSU ELECTRONICS LTD., KAGOSHIMA, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP Owner name: KYUSHU FUJITSU ELECTRONICS LTD., KAGOSHIMA, JP |