DE3853016T2 - Zusatz-Boosterschaltung zum Anheben der Ausgangsspannung einer Haupt-Boosterspannung. - Google Patents

Zusatz-Boosterschaltung zum Anheben der Ausgangsspannung einer Haupt-Boosterspannung.

Info

Publication number
DE3853016T2
DE3853016T2 DE3853016T DE3853016T DE3853016T2 DE 3853016 T2 DE3853016 T2 DE 3853016T2 DE 3853016 T DE3853016 T DE 3853016T DE 3853016 T DE3853016 T DE 3853016T DE 3853016 T2 DE3853016 T2 DE 3853016T2
Authority
DE
Germany
Prior art keywords
voltage
raising
booster
output voltage
additional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3853016T
Other languages
English (en)
Other versions
DE3853016D1 (de
Inventor
Hideo C O Patent Division Kato
Hiroshi C O Patent Di Iwahashi
Masamichi C O Patent Div Asano
Akira Narita
Shinichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE3853016D1 publication Critical patent/DE3853016D1/de
Application granted granted Critical
Publication of DE3853016T2 publication Critical patent/DE3853016T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE3853016T 1987-04-24 1988-04-22 Zusatz-Boosterschaltung zum Anheben der Ausgangsspannung einer Haupt-Boosterspannung. Expired - Lifetime DE3853016T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10141987A JPH0748310B2 (ja) 1987-04-24 1987-04-24 半導体集積回路

Publications (2)

Publication Number Publication Date
DE3853016D1 DE3853016D1 (de) 1995-03-23
DE3853016T2 true DE3853016T2 (de) 1995-07-20

Family

ID=14300189

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853016T Expired - Lifetime DE3853016T2 (de) 1987-04-24 1988-04-22 Zusatz-Boosterschaltung zum Anheben der Ausgangsspannung einer Haupt-Boosterspannung.

Country Status (5)

Country Link
US (1) US4905314A (de)
EP (1) EP0288075B1 (de)
JP (1) JPH0748310B2 (de)
KR (1) KR910003387B1 (de)
DE (1) DE3853016T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3059737B2 (ja) * 1989-12-25 2000-07-04 シャープ株式会社 半導体記憶装置
DE69232211T2 (de) * 1991-12-09 2002-06-27 Fujitsu Ltd Flash-Speicher mit besserer Löschbarkeit und dessen Schaltung
US5255224A (en) * 1991-12-18 1993-10-19 International Business Machines Corporation Boosted drive system for master/local word line memory architecture
KR940008206B1 (ko) * 1991-12-28 1994-09-08 삼성전자 주식회사 고전압 스위치 회로
US5633134A (en) * 1992-10-06 1997-05-27 Ig Laboratories, Inc. Method for simultaneously detecting multiple mutations in a DNA sample
US5406517A (en) * 1993-08-23 1995-04-11 Advanced Micro Devices, Inc. Distributed negative gate power supply
KR960012789B1 (ko) * 1993-12-01 1996-09-24 현대전자산업 주식회사 부트스트랩 회로
KR100307514B1 (ko) * 1994-07-30 2001-12-01 김영환 차지펌프회로
JP3378457B2 (ja) * 1997-02-26 2003-02-17 株式会社東芝 半導体装置
JP2001160295A (ja) * 1999-12-01 2001-06-12 Toshiba Corp 半導体集積回路
US6788578B1 (en) 2003-01-27 2004-09-07 Turbo Ic, Inc. Charge pump for conductive lines in programmable memory array

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693422A (en) * 1979-12-05 1981-07-29 Fujitsu Ltd Level-up circuit
JPS56129570A (en) * 1980-03-14 1981-10-09 Mitsubishi Electric Corp Booster circuit
US4725746A (en) * 1981-10-20 1988-02-16 Kabushiki Kaisha Toshiba MOSFET buffer circuit with an improved bootstrapping circuit
US4511811A (en) * 1982-02-08 1985-04-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
JPS58184821A (ja) * 1982-03-31 1983-10-28 Fujitsu Ltd 昇圧回路
JPS59124095A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 半導体記憶装置
US4716303A (en) * 1985-05-01 1987-12-29 Sharp Kabushiki Kaisha MOS IC pull-up circuit
JPS61260717A (ja) * 1985-05-14 1986-11-18 Mitsubishi Electric Corp 半導体昇圧信号発生回路
US4689495A (en) * 1985-06-17 1987-08-25 Advanced Micro Devices, Inc. CMOS high voltage switch

Also Published As

Publication number Publication date
EP0288075B1 (de) 1995-02-15
DE3853016D1 (de) 1995-03-23
US4905314A (en) 1990-02-27
EP0288075A3 (en) 1990-10-17
KR910003387B1 (ko) 1991-05-28
JPH0748310B2 (ja) 1995-05-24
JPS63268196A (ja) 1988-11-04
EP0288075A2 (de) 1988-10-26
KR880013173A (ko) 1988-11-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition