DE3688707T2 - Stromdosieranordnung. - Google Patents

Stromdosieranordnung.

Info

Publication number
DE3688707T2
DE3688707T2 DE86907036T DE3688707T DE3688707T2 DE 3688707 T2 DE3688707 T2 DE 3688707T2 DE 86907036 T DE86907036 T DE 86907036T DE 3688707 T DE3688707 T DE 3688707T DE 3688707 T2 DE3688707 T2 DE 3688707T2
Authority
DE
Germany
Prior art keywords
dosing arrangement
electric dosing
electric
arrangement
dosing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE86907036T
Other languages
English (en)
Other versions
DE3688707D1 (de
Inventor
William Henry Owen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xicor LLC
Original Assignee
Xicor LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xicor LLC filed Critical Xicor LLC
Application granted granted Critical
Publication of DE3688707D1 publication Critical patent/DE3688707D1/de
Publication of DE3688707T2 publication Critical patent/DE3688707T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
DE86907036T 1985-10-18 1986-10-17 Stromdosieranordnung. Expired - Lifetime DE3688707T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/788,770 US4829482A (en) 1985-10-18 1985-10-18 Current metering apparatus for optimally inducing field emission of electrons in tunneling devices and the like

Publications (2)

Publication Number Publication Date
DE3688707D1 DE3688707D1 (de) 1993-08-19
DE3688707T2 true DE3688707T2 (de) 1993-11-11

Family

ID=25145504

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86907036T Expired - Lifetime DE3688707T2 (de) 1985-10-18 1986-10-17 Stromdosieranordnung.

Country Status (5)

Country Link
US (1) US4829482A (de)
EP (1) EP0250479B1 (de)
JP (1) JPS63501253A (de)
DE (1) DE3688707T2 (de)
WO (1) WO1987002504A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5315547A (en) * 1988-07-11 1994-05-24 Hitachi, Ltd. Nonvolatile semiconductor memory device with selective tow erasure
US5238855A (en) * 1988-11-10 1993-08-24 Texas Instruments Incorporated Cross-point contact-free array with a high-density floating-gate structure
US5012132A (en) * 1989-10-05 1991-04-30 Xicor, Inc. Dual mode high voltage coupler
NZ238758A (en) * 1990-06-29 1994-01-26 Philmac Pty Ltd Underground meter box.
KR940004482Y1 (ko) * 1991-10-10 1994-07-04 금성일렉트론 주식회사 셑 플레이트 전압 초기 셑업회로
US5481492A (en) * 1994-12-14 1996-01-02 The United States Of America As Represented By The Secretary Of The Navy Floating gate injection voltage regulator
US5767734A (en) * 1995-12-21 1998-06-16 Altera Corporation High-voltage pump with initiation scheme
KR100281798B1 (ko) * 1998-10-30 2001-03-02 윤종용 플래시 메모리 장치
US6266075B1 (en) 1999-07-08 2001-07-24 Brady Worldwide, Inc. Printer with memory device for storing platen pressures
DE10224956A1 (de) * 2002-06-05 2004-01-08 Infineon Technologies Ag Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6865407B2 (en) * 2002-07-11 2005-03-08 Optical Sensors, Inc. Calibration technique for non-invasive medical devices
US6888200B2 (en) * 2002-08-30 2005-05-03 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6917078B2 (en) * 2002-08-30 2005-07-12 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6903969B2 (en) 2002-08-30 2005-06-07 Micron Technology Inc. One-device non-volatile random access memory cell
US6788578B1 (en) 2003-01-27 2004-09-07 Turbo Ic, Inc. Charge pump for conductive lines in programmable memory array
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US7145186B2 (en) 2004-08-24 2006-12-05 Micron Technology, Inc. Memory cell with trenched gated thyristor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2787418A (en) * 1952-06-14 1957-04-02 Hughes Aircraft Co Analogue-to-digital converter system
US3348216A (en) * 1963-12-09 1967-10-17 Billy H Vinson Method and circuits for storing electrical energy
JPS5922471B2 (ja) * 1975-08-25 1984-05-26 日本電気株式会社 直流昇圧回路
US4300212A (en) * 1979-01-24 1981-11-10 Xicor, Inc. Nonvolatile static random access memory devices
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
US4449203A (en) * 1981-02-25 1984-05-15 Motorola, Inc. Memory with reference voltage generator
US4388705A (en) * 1981-10-01 1983-06-14 Mostek Corporation Semiconductor memory circuit
US4511811A (en) * 1982-02-08 1985-04-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
JPS59124095A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
EP0250479A4 (de) 1989-08-30
JPS63501253A (ja) 1988-05-12
EP0250479B1 (de) 1993-07-14
WO1987002504A1 (en) 1987-04-23
EP0250479A1 (de) 1988-01-07
DE3688707D1 (de) 1993-08-19
US4829482A (en) 1989-05-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition