DE69412360D1 - Energieleitungsverbindungsschaltung und entsprechender Schalter mit integrierter Schaltung - Google Patents

Energieleitungsverbindungsschaltung und entsprechender Schalter mit integrierter Schaltung

Info

Publication number
DE69412360D1
DE69412360D1 DE69412360T DE69412360T DE69412360D1 DE 69412360 D1 DE69412360 D1 DE 69412360D1 DE 69412360 T DE69412360 T DE 69412360T DE 69412360 T DE69412360 T DE 69412360T DE 69412360 D1 DE69412360 D1 DE 69412360D1
Authority
DE
Germany
Prior art keywords
power line
line connection
corresponding switch
circuit
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69412360T
Other languages
English (en)
Other versions
DE69412360T2 (de
Inventor
Toru Nakamura
Katsuya Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyushu Fujitsu Electronics Ltd
Fujitsu Semiconductor Ltd
Original Assignee
Kyushu Fujitsu Electronics Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyushu Fujitsu Electronics Ltd, Fujitsu Ltd filed Critical Kyushu Fujitsu Electronics Ltd
Application granted granted Critical
Publication of DE69412360D1 publication Critical patent/DE69412360D1/de
Publication of DE69412360T2 publication Critical patent/DE69412360T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Electronic Switches (AREA)
DE69412360T 1993-05-27 1994-05-26 Energieleitungsverbindungsschaltung und entsprechender Schalter mit integrierter Schaltung Expired - Lifetime DE69412360T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12627193 1993-05-27

Publications (2)

Publication Number Publication Date
DE69412360D1 true DE69412360D1 (de) 1998-09-17
DE69412360T2 DE69412360T2 (de) 1999-04-22

Family

ID=14931068

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69412360T Expired - Lifetime DE69412360T2 (de) 1993-05-27 1994-05-26 Energieleitungsverbindungsschaltung und entsprechender Schalter mit integrierter Schaltung

Country Status (4)

Country Link
US (1) US5650741A (de)
EP (1) EP0627807B1 (de)
KR (1) KR0161308B1 (de)
DE (1) DE69412360T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5870573A (en) * 1996-10-18 1999-02-09 Hewlett-Packard Company Transistor switch used to isolate bus devices and/or translate bus voltage levels
JP3378457B2 (ja) 1997-02-26 2003-02-17 株式会社東芝 半導体装置
TW423162B (en) * 1997-02-27 2001-02-21 Toshiba Corp Power voltage supplying circuit and semiconductor memory including the same
KR100281336B1 (ko) * 1998-10-21 2001-03-02 구본준 쉬프트 레지스터 회로
FR2837996A1 (fr) * 2002-03-29 2003-10-03 Koninkl Philips Electronics Nv Convertisseur de tension a transistors mos
JP3902769B2 (ja) * 2003-08-29 2007-04-11 松下電器産業株式会社 降圧電圧出力回路
FR2874468B1 (fr) * 2004-08-17 2007-01-05 Atmel Nantes Sa Sa Dispositif d'aiguillage d'au moins deux tensions, circuit electronique et memoire correspondants
JP4440058B2 (ja) 2004-09-28 2010-03-24 パナソニック株式会社 半導体集積回路
KR100571646B1 (ko) 2005-03-31 2006-04-17 주식회사 하이닉스반도체 파워 다운 모드 반도체 소자
US7382168B2 (en) * 2005-08-30 2008-06-03 Agere Systems Inc. Buffer circuit with multiple voltage range
US7436238B2 (en) * 2006-02-13 2008-10-14 Texas Instruments Deutschland Gmbh Integrated voltage switching circuit
US7746154B2 (en) * 2006-09-27 2010-06-29 Atmel Corporation Multi-voltage multiplexer system
US7849336B1 (en) * 2007-04-17 2010-12-07 Nvidia Corporation Boost voltage generation
TWI451424B (zh) * 2009-04-17 2014-09-01 Mstar Semiconductor Inc 應用於快閃記憶體之保護電路及電源系統
JP5259505B2 (ja) 2009-06-26 2013-08-07 株式会社東芝 半導体記憶装置
TWI491124B (zh) * 2010-11-29 2015-07-01 Hon Hai Prec Ind Co Ltd 電源轉接裝置
JP6481553B2 (ja) * 2015-07-28 2019-03-13 株式会社デンソー スイッチング素子駆動回路

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902078A (en) * 1974-04-01 1975-08-26 Crystal Ind Inc Analog switch
US4316243A (en) * 1979-12-17 1982-02-16 General Electric Company Power FET inverter drive circuit
US4420700A (en) * 1981-05-26 1983-12-13 Motorola Inc. Semiconductor current regulator and switch
JPS5912622A (ja) * 1982-07-13 1984-01-23 Toshiba Corp 電子スイッチ回路
USRE32526E (en) * 1984-06-25 1987-10-20 Gated solid state FET relay
JPS6159911A (ja) * 1984-08-30 1986-03-27 Nec Corp 切換スイツチ回路
GB8713384D0 (en) * 1987-06-08 1987-07-15 Philips Electronic Associated Driving semiconductor device
GB8713388D0 (en) * 1987-06-08 1987-07-15 Philips Electronic Associated Semiconductor device
IT1227561B (it) * 1988-11-07 1991-04-16 Sgs Thomson Microelectronics Dispositivo circuitale, a ridotto numero di componenti, per l'accensione simultanea di una pluralita' di transistori di potenza
US4877982A (en) * 1989-01-23 1989-10-31 Honeywell Inc. MOSFET turn-on/off circuit
FR2644651B1 (fr) * 1989-03-15 1991-07-05 Sgs Thomson Microelectronics Circuit de commande de transistor mos de puissance sur charge inductive
US4992683A (en) * 1989-09-28 1991-02-12 Motorola, Inc. Load driver with reduced dissipation under reverse-battery conditions
US5023474A (en) * 1989-11-08 1991-06-11 National Semiconductor Corp. Adaptive gate charge circuit for power FETs
JPH03158018A (ja) * 1989-11-15 1991-07-08 Nec Corp 入力回路
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
US5111084A (en) * 1990-05-31 1992-05-05 Westinghouse Electric Corp. Low loss drain pulser circuit for solid state microwave power amplifiers
KR930003929B1 (ko) * 1990-08-09 1993-05-15 삼성전자 주식회사 데이타 출력버퍼
JP3028840B2 (ja) * 1990-09-19 2000-04-04 株式会社日立製作所 バイポーラトランジスタとｍｏｓトランジスタの複合回路、及びそれを用いた半導体集積回路装置
US5115143A (en) * 1991-08-08 1992-05-19 International Business Machines Efficient P-channel FET drive circuit
FR2683687B1 (fr) * 1991-11-13 1994-03-04 Nokia Consumer Electronics Franc Interrupteur de puissance a commutateur mos.
US5258662A (en) * 1992-04-06 1993-11-02 Linear Technology Corp. Micropower gate charge pump for power MOSFETS
US5365118A (en) * 1992-06-04 1994-11-15 Linear Technology Corp. Circuit for driving two power mosfets in a half-bridge configuration
EP0582125B1 (de) * 1992-08-04 1998-01-28 Siemens Aktiengesellschaft Ansteuerschaltung für einen Leistungs-MOSFET mit sourceseitiger Last
JP3194798B2 (ja) * 1992-10-30 2001-08-06 オリンパス光学工業株式会社 クランプ機能付きスイッチ回路
US5321313A (en) * 1993-01-07 1994-06-14 Texas Instruments Incorporated Controlled power MOSFET switch-off circuit
US5298817A (en) * 1993-02-09 1994-03-29 At&T Bell Laboratories High-frequency solid-state relay
US5510747A (en) * 1993-11-30 1996-04-23 Siliconix Incorporated Gate drive technique for a bidirectional blocking lateral MOSFET

Also Published As

Publication number Publication date
KR0161308B1 (ko) 1999-03-20
DE69412360T2 (de) 1999-04-22
EP0627807A3 (de) 1995-05-10
KR940027249A (ko) 1994-12-10
EP0627807A2 (de) 1994-12-07
EP0627807B1 (de) 1998-08-12
US5650741A (en) 1997-07-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

Owner name: KYUSHU FUJITSU ELECTRONICS LTD., KAGOSHIMA, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

Owner name: KYUSHU FUJITSU ELECTRONICS LTD., KAGOSHIMA, JP