DE69329134D1 - Halbleiterspeichergerät mit Ersatzspalten - Google Patents

Halbleiterspeichergerät mit Ersatzspalten

Info

Publication number
DE69329134D1
DE69329134D1 DE69329134T DE69329134T DE69329134D1 DE 69329134 D1 DE69329134 D1 DE 69329134D1 DE 69329134 T DE69329134 T DE 69329134T DE 69329134 T DE69329134 T DE 69329134T DE 69329134 D1 DE69329134 D1 DE 69329134D1
Authority
DE
Germany
Prior art keywords
address
spare
normal
counter
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69329134T
Other languages
English (en)
Other versions
DE69329134T2 (de
Inventor
Masaaki Kuwagata
Yuji Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69329134D1 publication Critical patent/DE69329134D1/de
Application granted granted Critical
Publication of DE69329134T2 publication Critical patent/DE69329134T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/702—Masking faults in memories by using spares or by reconfiguring by replacing auxiliary circuits, e.g. spare voltage generators, decoders or sense amplifiers, to be used instead of defective ones
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path

Landscapes

  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Hardware Redundancy (AREA)
  • Semiconductor Memories (AREA)
DE69329134T 1992-05-29 1993-05-28 Halbleiterspeichergerät mit Ersatzspalten Expired - Fee Related DE69329134T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13881492A JP3281034B2 (ja) 1992-05-29 1992-05-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69329134D1 true DE69329134D1 (de) 2000-09-07
DE69329134T2 DE69329134T2 (de) 2001-02-01

Family

ID=15230869

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329134T Expired - Fee Related DE69329134T2 (de) 1992-05-29 1993-05-28 Halbleiterspeichergerät mit Ersatzspalten

Country Status (5)

Country Link
US (1) US5442587A (de)
EP (1) EP0572027B1 (de)
JP (1) JP3281034B2 (de)
KR (1) KR960009034B1 (de)
DE (1) DE69329134T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5566107A (en) * 1995-05-05 1996-10-15 Micron Technology, Inc. Programmable circuit for enabling an associated circuit
KR100425441B1 (ko) * 1997-06-23 2004-05-24 삼성전자주식회사 비 메모리를 위한 퓨징 장치 및 방법
KR100468671B1 (ko) * 1997-07-07 2005-06-22 삼성전자주식회사 반도체메모리장치및방법
JPH11203889A (ja) * 1998-01-19 1999-07-30 Mitsubishi Electric Corp 半導体記憶装置
TW462123B (en) * 1998-03-10 2001-11-01 United Microelectronics Corp Layout design of electrostatic discharge protection device
KR100739983B1 (ko) * 2005-02-23 2007-07-16 주식회사 하이닉스반도체 반도체 메모리 장치의 리던던시 회로
KR100724333B1 (ko) * 2005-10-05 2007-06-04 삼성전자주식회사 리던던시 플래그 신호의 응답마진이 향상되는 반도체메모리 장치 및 이를 이용한 리던던시 구동 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6177946A (ja) * 1984-09-26 1986-04-21 Hitachi Ltd 半導体記憶装置
JP2577724B2 (ja) * 1986-07-31 1997-02-05 三菱電機株式会社 半導体記憶装置
EP0257120B1 (de) * 1986-08-22 1992-06-10 International Business Machines Corporation Dekodierverfahren und -Schaltungsanordnung für einen redundanten CMOS-Halbleiterspeicher
US5265055A (en) * 1988-10-07 1993-11-23 Hitachi, Ltd. Semiconductor memory having redundancy circuit
JP2773271B2 (ja) * 1989-07-26 1998-07-09 日本電気株式会社 半導体記憶装置
JPH04222998A (ja) * 1990-12-25 1992-08-12 Nec Corp 半導体メモリ装置
JP2689768B2 (ja) * 1991-07-08 1997-12-10 日本電気株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
EP0572027B1 (de) 2000-08-02
EP0572027A2 (de) 1993-12-01
JP3281034B2 (ja) 2002-05-13
US5442587A (en) 1995-08-15
KR960009034B1 (en) 1996-07-10
EP0572027A3 (de) 1998-02-04
DE69329134T2 (de) 2001-02-01
JPH05334897A (ja) 1993-12-17
KR930024024A (ko) 1993-12-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee