IT1271540B - Dispositivo a semiconduttore per permettere una semplice rivelazione esterna dell'utilizzo di un circuito ridondante e relativo dispositivo di memoria a semiconduttore - Google Patents

Dispositivo a semiconduttore per permettere una semplice rivelazione esterna dell'utilizzo di un circuito ridondante e relativo dispositivo di memoria a semiconduttore

Info

Publication number
IT1271540B
IT1271540B ITMI932200A ITMI932200A IT1271540B IT 1271540 B IT1271540 B IT 1271540B IT MI932200 A ITMI932200 A IT MI932200A IT MI932200 A ITMI932200 A IT MI932200A IT 1271540 B IT1271540 B IT 1271540B
Authority
IT
Italy
Prior art keywords
redundant
circuit
allow
use detection
redundant circuit
Prior art date
Application number
ITMI932200A
Other languages
English (en)
Inventor
Takahiro Komatsu
Original Assignee
Mitsubishi Demki Kabushiki Kai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Demki Kabushiki Kai filed Critical Mitsubishi Demki Kabushiki Kai
Publication of ITMI932200A0 publication Critical patent/ITMI932200A0/it
Publication of ITMI932200A1 publication Critical patent/ITMI932200A1/it
Application granted granted Critical
Publication of IT1271540B publication Critical patent/IT1271540B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/835—Masking faults in memories by using spares or by reconfiguring using programmable devices with roll call arrangements for redundant substitutions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
ITMI932200A 1993-03-23 1993-10-15 Dispositivo a semiconduttore per permettere una semplice rivelazione esterna dell'utilizzo di un circuito ridondante e relativo dispositivo di memoria a semiconduttore IT1271540B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5063573A JPH06275094A (ja) 1993-03-23 1993-03-23 半導体装置および半導体メモリ装置

Publications (3)

Publication Number Publication Date
ITMI932200A0 ITMI932200A0 (it) 1993-10-15
ITMI932200A1 ITMI932200A1 (it) 1995-04-15
IT1271540B true IT1271540B (it) 1997-05-30

Family

ID=13233136

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI932200A IT1271540B (it) 1993-03-23 1993-10-15 Dispositivo a semiconduttore per permettere una semplice rivelazione esterna dell'utilizzo di un circuito ridondante e relativo dispositivo di memoria a semiconduttore

Country Status (5)

Country Link
US (1) US5383156A (it)
JP (1) JPH06275094A (it)
KR (1) KR960013025B1 (it)
DE (1) DE4344233C2 (it)
IT (1) IT1271540B (it)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111100A (ja) * 1993-10-08 1995-04-25 Nec Corp テスト回路
JP3256626B2 (ja) * 1994-05-15 2002-02-12 株式会社東芝 半導体装置
JP3530574B2 (ja) * 1994-05-20 2004-05-24 株式会社ルネサステクノロジ 半導体記憶装置
KR970011719B1 (ko) * 1994-06-08 1997-07-14 삼성전자 주식회사 리던던시 기능을 가지는 반도체 메모리 장치
KR960016807B1 (ko) * 1994-06-30 1996-12-21 삼성전자 주식회사 반도체 메모리 장치의 리던던시 회로
US5517138A (en) * 1994-09-30 1996-05-14 Intel Corporation Dual row selection using multiplexed tri-level decoder
US5838620A (en) * 1995-04-05 1998-11-17 Micron Technology, Inc. Circuit for cancelling and replacing redundant elements
US5532965A (en) * 1995-04-13 1996-07-02 Kenney; Donald M. Memory precharge scheme using spare column
US5812468A (en) * 1995-11-28 1998-09-22 Micron Technology, Inc. Programmable device for redundant element cancel in a memory
US5798974A (en) * 1996-05-15 1998-08-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device realizing high speed access and low power consumption with redundant circuit
KR100220556B1 (ko) * 1996-10-30 1999-09-15 윤종용 단 펄스 형태의 리던던시 신호를 사용하는 디코더회로
JP3728356B2 (ja) * 1996-11-05 2005-12-21 株式会社ルネサステクノロジ 半導体装置
US5912579A (en) * 1997-02-06 1999-06-15 Zagar; Paul S. Circuit for cancelling and replacing redundant elements
US5859801A (en) * 1997-03-28 1999-01-12 Siemens Aktiengesellschaft Flexible fuse placement in redundant semiconductor memory
US6055611A (en) * 1997-07-09 2000-04-25 Micron Technology, Inc. Method and apparatus for enabling redundant memory
KR100266665B1 (ko) * 1998-02-11 2000-10-02 김영환 반도체 메모리의 퓨즈 리페어회로
US5970013A (en) * 1998-02-26 1999-10-19 Lucent Technologies Inc. Adaptive addressable circuit redundancy method and apparatus with broadcast write
US6011733A (en) * 1998-02-26 2000-01-04 Lucent Technologies Inc. Adaptive addressable circuit redundancy method and apparatus
US6452845B1 (en) * 1999-01-07 2002-09-17 Micron Technology, Inc. Apparatus for testing redundant elements in a packaged semiconductor memory device
US6438672B1 (en) 1999-06-03 2002-08-20 Agere Systems Guardian Corp. Memory aliasing method and apparatus
DE10026993B4 (de) * 1999-06-03 2014-04-03 Samsung Electronics Co., Ltd. Flash-Speicherbauelement mit einer neuen Redundanzansteuerschaltung
JP4141656B2 (ja) * 2000-06-07 2008-08-27 株式会社東芝 半導体メモリ集積回路および半導体メモリ装置をテストする方法
KR100498599B1 (ko) * 2000-12-30 2005-07-01 주식회사 하이닉스반도체 반도체 메모리 소자의 리던던시 사용여부 판별 장치
JP2003059297A (ja) * 2001-08-08 2003-02-28 Mitsubishi Electric Corp 半導体記憶装置およびそれを用いた半導体モジュール
CA2460307A1 (en) * 2001-10-31 2003-05-08 Paracor Medical, Inc. Heart failure treatment device
US6862230B2 (en) * 2002-03-19 2005-03-01 Broadcom Corporation Efficient column redundancy techniques
US7335203B2 (en) * 2003-02-12 2008-02-26 Kyphon Inc. System and method for immobilizing adjacent spinous processes
US7116590B2 (en) * 2004-08-23 2006-10-03 Micron Technology, Inc. Memory address repair without enable fuses
US7760533B2 (en) * 2007-10-02 2010-07-20 Micron Technology, Inc. Systems, methods and devices for arbitrating die stack position in a multi-bit stack device
TWI482165B (zh) 2011-09-13 2015-04-21 Ind Tech Res Inst 在三維晶片堆疊後可修補記憶體的技術
US8683276B2 (en) 2012-02-15 2014-03-25 Industrial Technology Research Institute Apparatus and method for repairing an integrated circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480199A (en) * 1982-03-19 1984-10-30 Fairchild Camera & Instrument Corp. Identification of repaired integrated circuits
US4567580A (en) * 1983-06-29 1986-01-28 Fairchild Camera & Instrument Corporation Redundancy roll call technique
JPH0746516B2 (ja) * 1985-07-22 1995-05-17 ソニー株式会社 冗長メモリ使用検出回路
US4757474A (en) * 1986-01-28 1988-07-12 Fujitsu Limited Semiconductor memory device having redundancy circuit portion
JP2530610B2 (ja) * 1986-02-27 1996-09-04 富士通株式会社 半導体記憶装置
JPH01245497A (ja) * 1988-03-28 1989-09-29 Nec Corp 半導体メモリ
JPH02146195A (ja) * 1988-11-28 1990-06-05 Nec Corp 半導体記憶装置
JP3283608B2 (ja) * 1993-01-28 2002-05-20 財団法人電力中央研究所 レーザービーム整形装置

Also Published As

Publication number Publication date
KR960013025B1 (ko) 1996-09-25
DE4344233C2 (de) 1997-01-16
US5383156A (en) 1995-01-17
DE4344233A1 (de) 1994-09-29
KR940022575A (ko) 1994-10-21
JPH06275094A (ja) 1994-09-30
ITMI932200A1 (it) 1995-04-15
ITMI932200A0 (it) 1993-10-15

Similar Documents

Publication Publication Date Title
IT1271540B (it) Dispositivo a semiconduttore per permettere una semplice rivelazione esterna dell'utilizzo di un circuito ridondante e relativo dispositivo di memoria a semiconduttore
KR910010534A (ko) 반도체 기억장치의 용장회로
KR930005013A (ko) 강유전성 회로를 위한 기준전압의 동적 조정
KR880000974A (ko) 휴즈회로와 그 내의 휴즈상태를 검출하는 검출회로를 갖는 반도체장치
KR870005393A (ko) 반도체 메모리
KR880012008A (ko) 전원절환회로
TW374169B (en) Semiconductor memory device
KR920010638A (ko) 반도체 기억장치
DE69132533D1 (de) Halbleiterspeichergerät mit redundanter Schaltung
TW331041B (en) Semiconductor memory device
EP0331113A3 (en) Semiconductor memory device
TW363189B (en) Semiconductor non-volatile memory apparatus and the computer system to make use of the apparatus
KR850007156A (ko) 다이나믹형 랜덤억세스 메모리
KR910019050A (ko) 반도체 기억장치
KR920005322A (ko) 온도 검출 회로를 갖는 반도체 장치
DE3684589D1 (de) Elektrisch aenderbare nichtfluechtige speicheranordnung.
KR870001596A (ko) 반도체 기억장치
EP0049462A3 (en) Memory device
DE69329134D1 (de) Halbleiterspeichergerät mit Ersatzspalten
KR850001611A (ko) 반도체 메모리
JPS57203294A (en) Semiconductor integrated circuit
US5742197A (en) Boosting voltage level detector for a semiconductor memory device
KR970024194A (ko) 반도체 집적 회로 장치(Semiconductor Integrated Circuit Device)
KR930024018A (ko) 반도체 장치
KR960012035A (ko) 용장 비트 라인 선택 신호 발생 회로를 포함하는 반도체 메모리 장치

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971028