DE69329081D1 - Verfahren zur Herstellung von Dioden zum Schutz gegen elektrostatische Entladungen - Google Patents
Verfahren zur Herstellung von Dioden zum Schutz gegen elektrostatische EntladungenInfo
- Publication number
- DE69329081D1 DE69329081D1 DE69329081T DE69329081T DE69329081D1 DE 69329081 D1 DE69329081 D1 DE 69329081D1 DE 69329081 T DE69329081 T DE 69329081T DE 69329081 T DE69329081 T DE 69329081T DE 69329081 D1 DE69329081 D1 DE 69329081D1
- Authority
- DE
- Germany
- Prior art keywords
- diodes
- manufacture
- protection against
- electrostatic discharge
- against electrostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/864,933 US5272097A (en) | 1992-04-07 | 1992-04-07 | Method for fabricating diodes for electrostatic discharge protection and voltage references |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69329081D1 true DE69329081D1 (de) | 2000-08-31 |
DE69329081T2 DE69329081T2 (de) | 2001-03-22 |
Family
ID=25344358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69329081T Expired - Lifetime DE69329081T2 (de) | 1992-04-07 | 1993-03-24 | Verfahren zur Herstellung von Dioden zum Schutz gegen elektrostatische Entladungen |
Country Status (7)
Country | Link |
---|---|
US (2) | US5272097A (de) |
EP (1) | EP0564897B1 (de) |
JP (1) | JPH06125048A (de) |
KR (1) | KR930022547A (de) |
AT (1) | ATE195036T1 (de) |
CA (1) | CA2092050A1 (de) |
DE (1) | DE69329081T2 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5416351A (en) * | 1991-10-30 | 1995-05-16 | Harris Corporation | Electrostatic discharge protection |
US5591661A (en) * | 1992-04-07 | 1997-01-07 | Shiota; Philip | Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures |
EP0656152A1 (de) * | 1992-08-14 | 1995-06-07 | International Business Machines Corporation | Mos-bauteil mit einem schutz gegen elektrostatische entladungen |
JP3456242B2 (ja) * | 1993-01-07 | 2003-10-14 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
US5477414A (en) * | 1993-05-03 | 1995-12-19 | Xilinx, Inc. | ESD protection circuit |
US5452245A (en) * | 1993-09-07 | 1995-09-19 | Motorola, Inc. | Memory efficient gate array cell |
US5616943A (en) * | 1993-09-29 | 1997-04-01 | At&T Global Information Solutions Company | Electrostatic discharge protection system for mixed voltage application specific integrated circuit design |
US5374565A (en) * | 1993-10-22 | 1994-12-20 | United Microelectronics Corporation | Method for ESD protection improvement |
CA2115230A1 (en) * | 1994-02-08 | 1995-08-09 | Jonathan H. Orchard-Webb | Esd protection circuit |
JPH07312424A (ja) * | 1994-05-18 | 1995-11-28 | Nippondenso Co Ltd | 半導体装置及びその製造方法 |
US5416038A (en) * | 1994-05-25 | 1995-05-16 | United Microelectronics Corporation | Method for producing semiconductor device with two different threshold voltages |
DE4423591C2 (de) * | 1994-07-06 | 1996-08-29 | Itt Ind Gmbh Deutsche | Schutzstruktur für integrierte Schaltungen |
EP0700089A1 (de) * | 1994-08-19 | 1996-03-06 | STMicroelectronics S.r.l. | Schutzanordnung gegen elektrostatische Entladungen an den Eingangs-/Ausgangsanschlüssen einer integrierten MOS-Schaltung |
US5517049A (en) * | 1994-09-30 | 1996-05-14 | Vlsi Technology, Inc. | CMOS output buffer with enhanced ESD resistance |
US5629544A (en) * | 1995-04-25 | 1997-05-13 | International Business Machines Corporation | Semiconductor diode with silicide films and trench isolation |
US5811869A (en) | 1996-01-04 | 1998-09-22 | Micron Technology, Inc. | Laser antifuse using gate capacitor |
AU2136197A (en) * | 1996-03-01 | 1997-09-16 | Micron Technology, Inc. | Novel vertical diode structures with low series resistance |
US6750091B1 (en) | 1996-03-01 | 2004-06-15 | Micron Technology | Diode formation method |
US5674761A (en) * | 1996-05-02 | 1997-10-07 | Etron Technology, Inc. | Method of making ESD protection device structure for low supply voltage applications |
US5742555A (en) | 1996-08-20 | 1998-04-21 | Micron Technology, Inc. | Method of anti-fuse repair |
US5781388A (en) * | 1996-09-03 | 1998-07-14 | Motorola, Inc. | Non-breakdown triggered electrostatic discharge protection circuit for an integrated circuit and method therefor |
TW307915B (en) * | 1996-11-07 | 1997-06-11 | Winbond Electronics Corp | Electrostatic discharge protection circuit |
EP0859456A1 (de) * | 1997-02-14 | 1998-08-19 | Koninklijke Philips Electronics N.V. | Steuerschaltung für einen Elektromotor |
US5716880A (en) * | 1997-02-20 | 1998-02-10 | Chartered Semiconductor Manufacturing Pte Ltd. | Method for forming vertical polysilicon diode compatible with CMOS/BICMOS formation |
JP2900908B2 (ja) * | 1997-03-31 | 1999-06-02 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6171893B1 (en) * | 1997-12-23 | 2001-01-09 | Texas Instruments - Acer Incorporated | Method for forming self-aligned silicided MOS transistors with ESD protection improvement |
US5920774A (en) * | 1998-02-17 | 1999-07-06 | Texas Instruments - Acer Incorporate | Method to fabricate short-channel MOSFETS with an improvement in ESD resistance |
US5991135A (en) * | 1998-05-11 | 1999-11-23 | Vlsi Technology, Inc. | System including ESD protection |
US6137143A (en) * | 1998-06-30 | 2000-10-24 | Intel Corporation | Diode and transistor design for high speed I/O |
US6046087A (en) * | 1999-02-10 | 2000-04-04 | Vanguard International Semiconductor Corporation | Fabrication of ESD protection device using a gate as a silicide blocking mask for a drain region |
US6836000B1 (en) | 2000-03-01 | 2004-12-28 | Micron Technology, Inc. | Antifuse structure and method of use |
US7589944B2 (en) * | 2001-03-16 | 2009-09-15 | Sofics Bvba | Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies |
EP1368874B2 (de) | 2001-03-16 | 2015-02-18 | Sofics BVBA | Strukturen zum schutz vor elektrostatischen entladungen für schnelle technologien mit gemischten und ultraniedrigen spannungsversorgungen |
JP2002305254A (ja) * | 2001-04-05 | 2002-10-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6900085B2 (en) | 2001-06-26 | 2005-05-31 | Advanced Micro Devices, Inc. | ESD implant following spacer deposition |
US6775116B2 (en) * | 2001-11-01 | 2004-08-10 | Agilent Technologies, Inc. | Method and apparatus for preventing buffers from being damaged by electrical charges collected on lines connected to the buffers |
CN100369269C (zh) * | 2003-12-10 | 2008-02-13 | 上海华虹Nec电子有限公司 | 嵌位二极管结构(三) |
US7709896B2 (en) * | 2006-03-08 | 2010-05-04 | Infineon Technologies Ag | ESD protection device and method |
TW200824093A (en) * | 2006-11-17 | 2008-06-01 | Realtek Semiconductor Corp | Metal oxide semiconductor component having voltage regulation and electrostatic discharge protection and the manufacturing method thereof |
CN101527313B (zh) * | 2008-03-07 | 2012-03-21 | 瑞昱半导体股份有限公司 | 金属氧化物半导体元件及其制造方法 |
TWI661530B (zh) * | 2018-02-13 | 2019-06-01 | 力晶積成電子製造股份有限公司 | 靜電放電保護元件 |
JP2021022666A (ja) | 2019-07-29 | 2021-02-18 | セイコーエプソン株式会社 | 静電気保護回路 |
JP2021022687A (ja) | 2019-07-30 | 2021-02-18 | セイコーエプソン株式会社 | 静電気保護回路 |
Family Cites Families (29)
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DE2015815B2 (de) * | 1969-04-21 | 1976-06-24 | Rca Corp., New York, N.Y. (V.St.A.) | Schutzschaltung fuer einen integrierten schaltkreis |
US3667009A (en) * | 1970-12-28 | 1972-05-30 | Motorola Inc | Complementary metal oxide semiconductor gate protection diode |
US3787717A (en) * | 1971-12-09 | 1974-01-22 | Ibm | Over voltage protection circuit lateral bipolar transistor with gated collector junction |
JPS5925381B2 (ja) * | 1977-12-30 | 1984-06-16 | 富士通株式会社 | 半導体集積回路装置 |
US4366522A (en) * | 1979-12-10 | 1982-12-28 | Reliance Electric Company | Self-snubbing bipolar/field effect (biofet) switching circuits and method |
US4312680A (en) * | 1980-03-31 | 1982-01-26 | Rca Corporation | Method of manufacturing submicron channel transistors |
JPS577151A (en) * | 1980-06-17 | 1982-01-14 | Nec Corp | Monolithic ic circuit |
IT1150062B (it) * | 1980-11-19 | 1986-12-10 | Ates Componenti Elettron | Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione |
GB2090741B (en) * | 1981-01-14 | 1985-11-20 | Craig Med Prod Ltd | Female incontinence device |
US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
US4476184A (en) * | 1983-08-09 | 1984-10-09 | The Boeing Company | Thermally stable polysulfone compositions for composite structures |
US4677735A (en) * | 1984-05-24 | 1987-07-07 | Texas Instruments Incorporated | Method of providing buried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layer |
JPS61229347A (ja) * | 1985-04-03 | 1986-10-13 | Nec Corp | 集積回路装置 |
US4763184A (en) * | 1985-04-30 | 1988-08-09 | Waferscale Integration, Inc. | Input circuit for protecting against damage caused by electrostatic discharge |
US4806999A (en) * | 1985-09-30 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Area efficient input protection |
JPH0666402B2 (ja) * | 1985-12-12 | 1994-08-24 | 三菱電機株式会社 | 半導体集積回路装置の入力保護回路 |
JPH0693497B2 (ja) * | 1986-07-30 | 1994-11-16 | 日本電気株式会社 | 相補型mis集積回路 |
IT1213411B (it) * | 1986-12-17 | 1989-12-20 | Sgs Microelettronica Spa | Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione. |
US4786955A (en) * | 1987-02-24 | 1988-11-22 | General Electric Company | Semiconductor device with source and drain depth extenders and a method of making the same |
JP2559397B2 (ja) * | 1987-03-16 | 1996-12-04 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
JPS6421055A (en) * | 1987-07-17 | 1989-01-24 | Kobe Steel Ltd | Production of plated steel stock excellent in adhesion |
US5182621A (en) * | 1988-06-14 | 1993-01-26 | Nec Corporation | Input protection circuit for analog/digital converting semiconductor |
US4875130A (en) * | 1988-07-06 | 1989-10-17 | National Semiconductor Corporation | ESD low resistance input structure |
JP2513010B2 (ja) * | 1988-12-27 | 1996-07-03 | 日本電気株式会社 | 半導体集積回路の入力保護装置 |
US5124877A (en) * | 1989-07-18 | 1992-06-23 | Gazelle Microcircuits, Inc. | Structure for providing electrostatic discharge protection |
JPH0393265A (ja) * | 1989-09-06 | 1991-04-18 | Nissan Motor Co Ltd | 半導体集積回路 |
JPH0734476B2 (ja) * | 1989-10-23 | 1995-04-12 | 三菱電機株式会社 | 半導体集積回路 |
KR950000141B1 (ko) * | 1990-04-03 | 1995-01-10 | 미쓰비시 뎅끼 가부시끼가이샤 | 반도체 장치 및 그 제조방법 |
US5182220A (en) * | 1992-04-02 | 1993-01-26 | United Microelectronics Corporation | CMOS on-chip ESD protection circuit and semiconductor structure |
-
1992
- 1992-04-07 US US07/864,933 patent/US5272097A/en not_active Expired - Lifetime
-
1993
- 1993-03-19 CA CA002092050A patent/CA2092050A1/en not_active Abandoned
- 1993-03-24 EP EP93104818A patent/EP0564897B1/de not_active Expired - Lifetime
- 1993-03-24 DE DE69329081T patent/DE69329081T2/de not_active Expired - Lifetime
- 1993-03-24 AT AT93104818T patent/ATE195036T1/de not_active IP Right Cessation
- 1993-03-31 KR KR1019930005345A patent/KR930022547A/ko not_active Application Discontinuation
- 1993-04-07 JP JP5106158A patent/JPH06125048A/ja active Pending
- 1993-08-20 US US08/093,074 patent/US5426322A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ATE195036T1 (de) | 2000-08-15 |
EP0564897A1 (de) | 1993-10-13 |
DE69329081T2 (de) | 2001-03-22 |
EP0564897B1 (de) | 2000-07-26 |
US5272097A (en) | 1993-12-21 |
JPH06125048A (ja) | 1994-05-06 |
KR930022547A (ko) | 1993-11-24 |
US5426322A (en) | 1995-06-20 |
CA2092050A1 (en) | 1993-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |