DE69327556D1 - Verfahren zur Herstellung eines dynamischen Halbleitersensors mit einer Struktur mit dünner Stärke - Google Patents

Verfahren zur Herstellung eines dynamischen Halbleitersensors mit einer Struktur mit dünner Stärke

Info

Publication number
DE69327556D1
DE69327556D1 DE69327556T DE69327556T DE69327556D1 DE 69327556 D1 DE69327556 D1 DE 69327556D1 DE 69327556 T DE69327556 T DE 69327556T DE 69327556 T DE69327556 T DE 69327556T DE 69327556 D1 DE69327556 D1 DE 69327556D1
Authority
DE
Germany
Prior art keywords
manufacturing
thin thickness
semiconductor sensor
dynamic semiconductor
thickness structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69327556T
Other languages
English (en)
Other versions
DE69327556T2 (de
Inventor
Tsuyoshi Fukada
Yoshimi Yoshino
Hiroshige Sugito
Minekazu Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP24935292A external-priority patent/JP3225622B2/ja
Priority claimed from JP25145592A external-priority patent/JPH06104240A/ja
Priority claimed from JP5048853A external-priority patent/JP2897581B2/ja
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE69327556D1 publication Critical patent/DE69327556D1/de
Application granted granted Critical
Publication of DE69327556T2 publication Critical patent/DE69327556T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
DE69327556T 1992-09-18 1993-09-20 Verfahren zur Herstellung eines dynamischen Halbleitersensors mit einer Struktur mit dünner Stärke Expired - Lifetime DE69327556T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24935292A JP3225622B2 (ja) 1992-09-18 1992-09-18 薄形半導体力学センサ
JP25145592A JPH06104240A (ja) 1992-09-21 1992-09-21 半導体装置のエッチング方法
JP5048853A JP2897581B2 (ja) 1993-03-10 1993-03-10 半導体歪みセンサの製造方法

Publications (2)

Publication Number Publication Date
DE69327556D1 true DE69327556D1 (de) 2000-02-17
DE69327556T2 DE69327556T2 (de) 2000-08-24

Family

ID=27293436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69327556T Expired - Lifetime DE69327556T2 (de) 1992-09-18 1993-09-20 Verfahren zur Herstellung eines dynamischen Halbleitersensors mit einer Struktur mit dünner Stärke

Country Status (3)

Country Link
US (1) US5643803A (de)
EP (1) EP0588371B1 (de)
DE (1) DE69327556T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949118A (en) 1994-03-14 1999-09-07 Nippondenso Co., Ltd. Etching method for silicon substrates and semiconductor sensor
JP3305516B2 (ja) * 1994-10-31 2002-07-22 株式会社東海理化電機製作所 静電容量式加速度センサ及びその製造方法
US6316796B1 (en) * 1995-05-24 2001-11-13 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
US6084257A (en) * 1995-05-24 2000-07-04 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
JP3433871B2 (ja) * 1996-01-26 2003-08-04 株式会社デンソー 集積化半導体歪みセンサ及びその製造方法
US6284670B1 (en) 1997-07-23 2001-09-04 Denso Corporation Method of etching silicon wafer and silicon wafer
US6143584A (en) * 1997-07-25 2000-11-07 Denso Corporation Method for fabrication of a semiconductor sensor
DE19903380B4 (de) * 1998-02-02 2007-10-18 Denso Corp., Kariya Halbleitersensoren für eine physikalische Grösse und ihre Herstellungsverfahren
US6127237A (en) * 1998-03-04 2000-10-03 Kabushiki Kaisha Toshiba Etching end point detecting method based on junction current measurement and etching apparatus
DE69925837T2 (de) * 1999-10-29 2005-10-27 Sensonor Asa Mikromechanischer Sensor
US20020020840A1 (en) * 2000-03-10 2002-02-21 Setsuo Nakajima Semiconductor device and manufacturing method thereof
JP2002340713A (ja) * 2001-05-10 2002-11-27 Denso Corp 半導体圧力センサ
JP2003302299A (ja) 2002-04-10 2003-10-24 Denso Corp 力学量検出装置の製造方法
JP3915586B2 (ja) * 2002-04-24 2007-05-16 株式会社デンソー 力学量検出装置の製造方法
DE10227662B4 (de) * 2002-06-20 2006-09-21 Eads Deutschland Gmbh Mikromechanisches Bauelement für Beschleunigungs-oder Drehratensensoren und Sensor
US7132321B2 (en) * 2002-10-24 2006-11-07 The United States Of America As Represented By The Secretary Of The Navy Vertical conducting power semiconductor devices implemented by deep etch
US7406870B2 (en) * 2005-01-06 2008-08-05 Ricoh Company, Ltd. Semiconductor sensor
US20060175201A1 (en) * 2005-02-07 2006-08-10 Hooman Hafezi Immersion process for electroplating applications
JP4945167B2 (ja) * 2006-05-12 2012-06-06 スタンレー電気株式会社 半導体発光素子の製造方法及び該製造方法により製造された半導体発光素子の実装方法
US20090029791A1 (en) * 2007-07-25 2009-01-29 Solheim John A Golf Clubs and Methods of Manufacture
US8558330B2 (en) * 2011-10-31 2013-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Deep well process for MEMS pressure sensor
JP6708257B2 (ja) * 2016-07-20 2020-06-10 三菱電機株式会社 半導体装置およびその製造方法
JP6865787B2 (ja) 2019-05-30 2021-04-28 三菱電機株式会社 半導体歪検出素子及びｍｅｍｓアクチュエータデバイス

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4054497A (en) * 1975-10-06 1977-10-18 Honeywell Inc. Method for electrolytically etching semiconductor material
JPS5913377A (ja) * 1982-07-14 1984-01-24 Fuji Electric Corp Res & Dev Ltd 半導体圧力変換素子の受圧ダイヤフラム形成方法
JPS6130038A (ja) * 1984-07-23 1986-02-12 Nec Corp エツチングの方法
JPS6261374A (ja) * 1985-09-11 1987-03-18 Nec Corp シリコンダイアフラムの形成方法
JPS63292071A (ja) * 1987-05-26 1988-11-29 Fujikura Ltd 半導体加速度センサの製造方法
US4995953A (en) * 1989-10-30 1991-02-26 Motorola, Inc. Method of forming a semiconductor membrane using an electrochemical etch-stop
JP3151816B2 (ja) * 1990-08-06 2001-04-03 日産自動車株式会社 エッチング方法
JPH04239183A (ja) * 1991-01-11 1992-08-27 Mitsubishi Electric Corp 半導体加工方法
JPH0566728A (ja) * 1991-09-09 1993-03-19 Toshiba Corp Ｌｃｄ電源回路

Also Published As

Publication number Publication date
EP0588371A3 (de) 1995-05-10
EP0588371A2 (de) 1994-03-23
DE69327556T2 (de) 2000-08-24
EP0588371B1 (de) 2000-01-12
US5643803A (en) 1997-07-01

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