DE69325423T2 - 3-Thienylsiliziumverbindungen, hieraus geformter, ultradünner, chemisch adsorbierter Film und Verfahren zu dessen Herstellung - Google Patents

3-Thienylsiliziumverbindungen, hieraus geformter, ultradünner, chemisch adsorbierter Film und Verfahren zu dessen Herstellung

Info

Publication number
DE69325423T2
DE69325423T2 DE69325423T DE69325423T DE69325423T2 DE 69325423 T2 DE69325423 T2 DE 69325423T2 DE 69325423 T DE69325423 T DE 69325423T DE 69325423 T DE69325423 T DE 69325423T DE 69325423 T2 DE69325423 T2 DE 69325423T2
Authority
DE
Germany
Prior art keywords
ultrathin
thienyl
production
film formed
silicon compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69325423T
Other languages
English (en)
Other versions
DE69325423D1 (de
Inventor
Norihisa Mino
Kazufumi Ogawa
Toshinobu Ishihara
Mikio Endo
Tohru Kubota
Kazuyuki Asakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69325423D1 publication Critical patent/DE69325423D1/de
Application granted granted Critical
Publication of DE69325423T2 publication Critical patent/DE69325423T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
DE69325423T 1992-09-10 1993-09-09 3-Thienylsiliziumverbindungen, hieraus geformter, ultradünner, chemisch adsorbierter Film und Verfahren zu dessen Herstellung Expired - Lifetime DE69325423T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4242352A JP2889768B2 (ja) 1992-09-10 1992-09-10 ３−チエニル基含有ケイ素化合物及びその製造方法

Publications (2)

Publication Number Publication Date
DE69325423D1 DE69325423D1 (de) 1999-07-29
DE69325423T2 true DE69325423T2 (de) 1999-11-25

Family

ID=17087919

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325423T Expired - Lifetime DE69325423T2 (de) 1992-09-10 1993-09-09 3-Thienylsiliziumverbindungen, hieraus geformter, ultradünner, chemisch adsorbierter Film und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (1) US5461166A (de)
EP (1) EP0587159B1 (de)
JP (1) JP2889768B2 (de)
DE (1) DE69325423T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3866809B2 (ja) * 1996-12-19 2007-01-10 松下電器産業株式会社 有機膜及びその製造方法
DE19815220C2 (de) * 1998-03-27 2003-12-18 Univ Dresden Tech Verfahren zur haftfesten und dichten chemischen oder galvanischen Metallisierung von Substraten sowie Haftvermittler zur Durchführung des Verfahrens
DE10025522B4 (de) * 2000-05-18 2004-05-13 Technische Universität Dresden Verfahren zur strukturierten Abscheidung leitfähiger Polymerer
US7259389B2 (en) 2002-02-08 2007-08-21 Matsushita Electric Industrial Co., Ltd. Organic electronic device and method for manufacturing the same
DE10328810B4 (de) * 2003-06-20 2005-10-20 Infineon Technologies Ag Syntheseverfahren für eine Verbindung zur Bildung einer selbstorganisierenden Monolage, Verbindung zur Bildung einer selbstorganisierenden Monolage und eine Schichtstruktur für ein Halbleiterbauelement
JP2005039222A (ja) * 2003-06-25 2005-02-10 Sharp Corp 機能性有機薄膜、有機薄膜トランジスタ及びそれらの製造方法
JP4612443B2 (ja) * 2004-03-18 2011-01-12 シャープ株式会社 機能性有機薄膜、有機薄膜トランジスタ及びそれらの製造方法
US7235492B2 (en) * 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
WO2007119690A1 (ja) 2006-04-12 2007-10-25 Panasonic Corporation 有機分子膜構造体の形成方法及び有機分子膜構造体
WO2009120434A1 (en) * 2008-03-26 2009-10-01 Dow Corning Corporation Silicone composition and organic light-emitting diode

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2640818A (en) * 1949-06-25 1953-06-02 Gen Electric Thienyl-substituted polysiloxanes
US4049676A (en) * 1975-06-30 1977-09-20 Union Carbide Corporation Sulfolanyloxyalkyl cyclic polysiloxanes
FR2362148A1 (fr) * 1976-08-17 1978-03-17 Rhone Poulenc Ind Composes silices polyethyleniques
FR2630442B1 (fr) * 1988-04-20 1990-09-07 Rhone Poulenc Chimie Composes organosilicies, materiaux et dispositifs electrooptiques les contenant
JP2697910B2 (ja) * 1989-08-21 1998-01-19 積水化学工業株式会社 導電性高分子の製造方法
US5114737A (en) * 1990-02-05 1992-05-19 Matsushita Electric Industrial Co., Ltd. Process for preparing an organic monomolecular film
JP2507153B2 (ja) * 1990-07-31 1996-06-12 松下電器産業株式会社 有機デバイスとその製造方法
JP2992141B2 (ja) * 1991-09-26 1999-12-20 松下電器産業株式会社 走査型トンネル電子顕微鏡用原子間力顕微鏡の探針及び３−チエニル基含有珪素化合物

Also Published As

Publication number Publication date
EP0587159A1 (de) 1994-03-16
DE69325423D1 (de) 1999-07-29
EP0587159B1 (de) 1999-06-23
JPH0692971A (ja) 1994-04-05
JP2889768B2 (ja) 1999-05-10
US5461166A (en) 1995-10-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP