DE69322581D1 - Halbleiterspeichergerät mit einer Adressenübergangsdetektorschaltung zur schnellen Inbetriebnahme eines redundanten Dekoders - Google Patents
Halbleiterspeichergerät mit einer Adressenübergangsdetektorschaltung zur schnellen Inbetriebnahme eines redundanten DekodersInfo
- Publication number
- DE69322581D1 DE69322581D1 DE69322581T DE69322581T DE69322581D1 DE 69322581 D1 DE69322581 D1 DE 69322581D1 DE 69322581 T DE69322581 T DE 69322581T DE 69322581 T DE69322581 T DE 69322581T DE 69322581 D1 DE69322581 D1 DE 69322581D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- detector circuit
- address transition
- transition detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4255058A JP2734315B2 (ja) | 1992-09-24 | 1992-09-24 | 半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69322581D1 true DE69322581D1 (de) | 1999-01-28 |
DE69322581T2 DE69322581T2 (de) | 1999-07-01 |
Family
ID=17273564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69322581T Expired - Lifetime DE69322581T2 (de) | 1992-09-24 | 1993-09-23 | Halbleiterspeichergerät mit einer Adressenübergangsdetektorschaltung zur schnellen Inbetriebnahme eines redundanten Dekoders |
Country Status (5)
Country | Link |
---|---|
US (1) | US5414659A (de) |
EP (1) | EP0591776B1 (de) |
JP (1) | JP2734315B2 (de) |
KR (1) | KR950014098B1 (de) |
DE (1) | DE69322581T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5481500A (en) * | 1994-07-22 | 1996-01-02 | International Business Machines Corporation | Precharged bit decoder and sense amplifier with integrated latch usable in pipelined memories |
FR2724483B1 (fr) * | 1994-09-12 | 1996-12-27 | Sgs Thomson Microelectronics | Procede de decodage d'adresse dans une memoire en circuit integre et circuit memoire mettant en oeuvre le procede |
JP3425811B2 (ja) * | 1994-09-28 | 2003-07-14 | Necエレクトロニクス株式会社 | 半導体メモリ |
JP2630274B2 (ja) * | 1994-09-28 | 1997-07-16 | 日本電気株式会社 | 半導体記憶装置 |
KR0177740B1 (ko) * | 1994-11-17 | 1999-04-15 | 김광호 | 반도체 메모리 장치의 리던던시 회로 및 그 방법 |
US5713005A (en) * | 1995-02-10 | 1998-01-27 | Townsend And Townsend And Crew Llp | Method and apparatus for pipelining data in an integrated circuit |
JPH09153288A (ja) * | 1995-11-30 | 1997-06-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5757718A (en) * | 1996-02-28 | 1998-05-26 | Nec Corporation | Semiconductor memory device having address transition detection circuit for controlling sense and latch operations |
DE69616747T2 (de) * | 1996-03-29 | 2002-08-08 | Stmicroelectronics S.R.L., Agrate Brianza | Redundanzverwaltungsverfahren und -architektur, insbesondere für nicht-flüchtige Speicher |
US5691946A (en) * | 1996-12-03 | 1997-11-25 | International Business Machines Corporation | Row redundancy block architecture |
IT1294367B1 (it) * | 1997-08-29 | 1999-03-24 | Sgs Thomson Microelectronics | Circuiteria atd immune nei confronti di impulsi spuri |
US5963489A (en) * | 1998-03-24 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for redundancy word line replacement in a repairable semiconductor memory device |
KR100549943B1 (ko) * | 1999-09-08 | 2006-02-07 | 삼성전자주식회사 | 반도체 메모리 장치의 리던던시 디코더 |
KR100732746B1 (ko) * | 2001-06-29 | 2007-06-27 | 주식회사 하이닉스반도체 | 동기 메모리 소자의 칼럼 리던던시 프리차지 회로 |
JP2003100094A (ja) * | 2001-09-27 | 2003-04-04 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6728123B2 (en) | 2002-04-15 | 2004-04-27 | International Business Machines Corporation | Redundant array architecture for word replacement in CAM |
DE10239857A1 (de) * | 2002-08-29 | 2004-03-18 | Infineon Technologies Ag | Verfahren zum Ansteuern von einmalig betreibbaren Trennelementen |
KR100598114B1 (ko) * | 2005-01-25 | 2006-07-10 | 삼성전자주식회사 | 페이지 모드 동작을 수행하는 반도체 메모리 장치 |
US7268589B2 (en) * | 2005-12-16 | 2007-09-11 | Actel Corporation | Address transition detector for fast flash memory device |
JP2010245988A (ja) * | 2009-04-09 | 2010-10-28 | Yazaki Corp | 通信アドレス検出装置、制御回路内蔵コネクタ、及び、通信アドレス検出方法 |
JP5529661B2 (ja) * | 2010-07-23 | 2014-06-25 | ラピスセミコンダクタ株式会社 | 半導体メモリ |
IT1404183B1 (it) | 2011-02-28 | 2013-11-15 | St Microelectronics Srl | Dispositivo di decodifica di indirizzo |
US10044342B2 (en) | 2016-06-09 | 2018-08-07 | Qualcomm Incorporated | Delay line for one shot pre-emphasis |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6337899A (ja) * | 1986-07-30 | 1988-02-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
US4689494A (en) * | 1986-09-18 | 1987-08-25 | Advanced Micro Devices, Inc. | Redundancy enable/disable circuit |
JPH07105157B2 (ja) * | 1987-09-10 | 1995-11-13 | 日本電気株式会社 | 冗長メモリセル使用判定回路 |
ATE87753T1 (de) * | 1988-02-10 | 1993-04-15 | Siemens Ag | Redundanzdekoder eines integrierten halbleiterspeichers. |
US5289417A (en) * | 1989-05-09 | 1994-02-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device with redundancy circuit |
KR930000821B1 (ko) * | 1990-02-24 | 1993-02-05 | 현대전자산업 주식회사 | 메모리 소자의 저소비 전력 리던던시(Redundancy)회로 |
JP2600435B2 (ja) * | 1990-05-08 | 1997-04-16 | 松下電器産業株式会社 | 冗長救済回路 |
EP0469571B1 (de) * | 1990-07-31 | 1997-11-12 | Texas Instruments Incorporated | Redundante Halbleiterspeicheranordnung |
JP2629475B2 (ja) * | 1991-04-04 | 1997-07-09 | 松下電器産業株式会社 | 半導体集積回路 |
JP2888034B2 (ja) * | 1991-06-27 | 1999-05-10 | 日本電気株式会社 | 半導体メモリ装置 |
-
1992
- 1992-09-24 JP JP4255058A patent/JP2734315B2/ja not_active Expired - Fee Related
-
1993
- 1993-09-20 US US08/123,258 patent/US5414659A/en not_active Expired - Lifetime
- 1993-09-23 EP EP93115374A patent/EP0591776B1/de not_active Expired - Lifetime
- 1993-09-23 KR KR1019930019382A patent/KR950014098B1/ko not_active IP Right Cessation
- 1993-09-23 DE DE69322581T patent/DE69322581T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0591776A2 (de) | 1994-04-13 |
JP2734315B2 (ja) | 1998-03-30 |
EP0591776B1 (de) | 1998-12-16 |
DE69322581T2 (de) | 1999-07-01 |
JPH06111597A (ja) | 1994-04-22 |
KR950014098B1 (ko) | 1995-11-21 |
US5414659A (en) | 1995-05-09 |
EP0591776A3 (de) | 1994-11-02 |
KR940007893A (ko) | 1994-04-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC CORP., TOKIO/TOKYO, JP Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: ELPIDA MEMORY, INC., TOKYO, JP |