KR930016559U - 워드라인 전압 공급회로 - Google Patents

워드라인 전압 공급회로

Info

Publication number
KR930016559U
KR930016559U KR2019910023687U KR910023687U KR930016559U KR 930016559 U KR930016559 U KR 930016559U KR 2019910023687 U KR2019910023687 U KR 2019910023687U KR 910023687 U KR910023687 U KR 910023687U KR 930016559 U KR930016559 U KR 930016559U
Authority
KR
South Korea
Prior art keywords
word line
supply circuit
voltage supply
line voltage
word
Prior art date
Application number
KR2019910023687U
Other languages
English (en)
Other versions
KR0113252Y1 (ko
Inventor
전용원
Original Assignee
엘지일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지일렉트론 주식회사 filed Critical 엘지일렉트론 주식회사
Priority to KR2019910023687U priority Critical patent/KR0113252Y1/ko
Priority to JP1992087411U priority patent/JP2578506Y2/ja
Priority to DE9219208U priority patent/DE9219208U1/de
Priority to US07/996,304 priority patent/US5351217A/en
Priority to DE4243903A priority patent/DE4243903B4/de
Publication of KR930016559U publication Critical patent/KR930016559U/ko
Application granted granted Critical
Publication of KR0113252Y1 publication Critical patent/KR0113252Y1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
KR2019910023687U 1991-12-24 1991-12-24 워드라인 전압 공급회로 KR0113252Y1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR2019910023687U KR0113252Y1 (ko) 1991-12-24 1991-12-24 워드라인 전압 공급회로
JP1992087411U JP2578506Y2 (ja) 1991-12-24 1992-12-21 ワードライン電圧供給回路
DE9219208U DE9219208U1 (de) 1991-12-24 1992-12-23 Wortleitung-Spannungsversorgungskreis
US07/996,304 US5351217A (en) 1991-12-24 1992-12-23 Word line voltage supply circuit
DE4243903A DE4243903B4 (de) 1991-12-24 1992-12-23 Wortleitung-Spannungsversorgungskreis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019910023687U KR0113252Y1 (ko) 1991-12-24 1991-12-24 워드라인 전압 공급회로

Publications (2)

Publication Number Publication Date
KR930016559U true KR930016559U (ko) 1993-07-29
KR0113252Y1 KR0113252Y1 (ko) 1998-04-14

Family

ID=19325381

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019910023687U KR0113252Y1 (ko) 1991-12-24 1991-12-24 워드라인 전압 공급회로

Country Status (4)

Country Link
US (1) US5351217A (ko)
JP (1) JP2578506Y2 (ko)
KR (1) KR0113252Y1 (ko)
DE (1) DE4243903B4 (ko)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243233A (en) * 1990-04-06 1991-10-23 Mosaid Inc DRAM word line driver
US5751643A (en) * 1990-04-06 1998-05-12 Mosaid Technologies Incorporated Dynamic memory word line driver
GB9007791D0 (en) * 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
GB9007790D0 (en) 1990-04-06 1990-06-06 Lines Valerie L Dynamic memory wordline driver scheme
US5222040A (en) * 1990-12-11 1993-06-22 Nexcom Technology, Inc. Single transistor eeprom memory cell
JP3267436B2 (ja) * 1993-04-19 2002-03-18 三菱電機株式会社 半導体装置
US5650976A (en) * 1993-05-14 1997-07-22 Micron Technology, Inc. Dual strobed negative pumped wordlines for dynamic random access memories
US5410508A (en) * 1993-05-14 1995-04-25 Micron Semiconductor, Inc. Pumped wordlines
JP3306682B2 (ja) * 1993-08-18 2002-07-24 日本テキサス・インスツルメンツ株式会社 駆動回路
JPH07111084A (ja) * 1993-10-13 1995-04-25 Oki Micro Design Miyazaki:Kk 半導体集積回路装置
JP2725570B2 (ja) * 1993-11-02 1998-03-11 日本電気株式会社 半導体メモリ装置
FR2714201B1 (fr) * 1993-12-22 1996-03-01 Sgs Thomson Microelectronics Circuit décodeur de ligne pour mémoire fonctionnant sous de faibles tensions d'alimentation.
JP3090833B2 (ja) * 1993-12-28 2000-09-25 株式会社東芝 半導体記憶装置
JPH07254275A (ja) * 1994-01-31 1995-10-03 Toshiba Corp 半導体記憶装置
US5481500A (en) * 1994-07-22 1996-01-02 International Business Machines Corporation Precharged bit decoder and sense amplifier with integrated latch usable in pipelined memories
KR0121131B1 (ko) * 1994-10-13 1997-11-10 문정환 반도체 메모리장치의 구동회로
US5696721A (en) * 1995-05-05 1997-12-09 Texas Instruments Incorporated Dynamic random access memory having row decoder with level translator for driving a word line voltage above and below an operating supply voltage range
KR100206598B1 (ko) * 1995-12-29 1999-07-01 김영환 워드라인 구동 장치
KR100237624B1 (ko) * 1996-10-30 2000-01-15 김영환 반도체 메모리장치의 로우 디코더
JPH10241361A (ja) * 1997-02-25 1998-09-11 Toshiba Corp 半導体記憶装置
US5764589A (en) * 1997-03-28 1998-06-09 International Business Machines Corporation Array row and column decoder apparatus and method
KR100281798B1 (ko) * 1998-10-30 2001-03-02 윤종용 플래시 메모리 장치
EP1014547A3 (en) 1998-12-21 2000-11-15 Fairchild Semiconductor Corporation Low-current charge pump system
JP2001076493A (ja) * 1999-09-03 2001-03-23 Nec Corp 強誘電体記憶装置
JP2001338490A (ja) * 2000-05-25 2001-12-07 Nec Corp 半導体記憶装置
US6586970B1 (en) * 2001-09-17 2003-07-01 Lsi Logic Corporation Address decoder with pseudo and or pseudo nand gate
US6700822B1 (en) 2002-05-15 2004-03-02 Taiwan Semiconductor Manufacturing Company Pre-decoder for glitch free word line addressing in a memory device
JP2007293933A (ja) * 2006-04-21 2007-11-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
US8385150B2 (en) * 2011-03-04 2013-02-26 Oracle International Corporation Delay efficient gater repeater
JP6468920B2 (ja) * 2015-03-31 2019-02-13 株式会社沖データ 発光駆動回路及び画像形成装置
CN104900266B (zh) * 2015-06-10 2018-10-26 上海华虹宏力半导体制造有限公司 Eeprom存储单元门极控制信号产生电路
US9632571B1 (en) * 2016-04-08 2017-04-25 Jeng-Jye Shau Low power high performance electrical circuits
CN108538267B (zh) * 2018-04-20 2020-08-04 昆山龙腾光电股份有限公司 驱动电路和液晶显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817032B2 (ja) * 1986-03-12 1996-02-21 株式会社日立製作所 半導体集積回路装置
US4884240A (en) * 1986-06-19 1989-11-28 Texas Instruments Incorporated Static row driver
JPS63209220A (ja) * 1987-02-26 1988-08-30 Toshiba Corp インバ−タ回路
JPS6437797A (en) * 1987-08-03 1989-02-08 Oki Electric Ind Co Ltd Eprom device
JPS6453395A (en) * 1987-08-25 1989-03-01 Mitsubishi Electric Corp Semiconductor memory device
US4820941A (en) * 1988-02-01 1989-04-11 Texas Instruments Incorporated Decoder driver circuit for programming high-capacitance lines
JPH0766669B2 (ja) * 1988-02-19 1995-07-19 日本電気株式会社 デコーダバッファ回路
US4843261A (en) * 1988-02-29 1989-06-27 International Business Machines Corporation Complementary output, high-density CMOS decoder/driver circuit for semiconductor memories
US5103113A (en) * 1990-06-13 1992-04-07 Texas Instruments Incorporated Driving circuit for providing a voltage boasted over the power supply voltage source as a driving signal

Also Published As

Publication number Publication date
US5351217A (en) 1994-09-27
KR0113252Y1 (ko) 1998-04-14
JP2578506Y2 (ja) 1998-08-13
JPH0568000U (ja) 1993-09-10
DE4243903A1 (en) 1993-07-01
DE4243903B4 (de) 2004-02-26

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