DE69430890D1 - Halbleiterspeichergerät mit Redundanz - Google Patents
Halbleiterspeichergerät mit RedundanzInfo
- Publication number
- DE69430890D1 DE69430890D1 DE69430890T DE69430890T DE69430890D1 DE 69430890 D1 DE69430890 D1 DE 69430890D1 DE 69430890 T DE69430890 T DE 69430890T DE 69430890 T DE69430890 T DE 69430890T DE 69430890 D1 DE69430890 D1 DE 69430890D1
- Authority
- DE
- Germany
- Prior art keywords
- redundancy
- storage device
- semiconductor storage
- semiconductor
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/24—Radio transmission systems, i.e. using radiation field for communication between two or more posts
- H04B7/26—Radio transmission systems, i.e. using radiation field for communication between two or more posts at least one of which is mobile
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Mobile Radio Communication Systems (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23638593A JP2616544B2 (ja) | 1993-09-22 | 1993-09-22 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69430890D1 true DE69430890D1 (de) | 2002-08-08 |
DE69430890T2 DE69430890T2 (de) | 2003-03-13 |
Family
ID=17000000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69430890T Expired - Fee Related DE69430890T2 (de) | 1993-09-22 | 1994-09-19 | Halbleiterspeichergerät mit Redundanz |
Country Status (5)
Country | Link |
---|---|
US (1) | US5446693A (de) |
EP (1) | EP0645712B1 (de) |
JP (1) | JP2616544B2 (de) |
KR (2) | KR0140350B1 (de) |
DE (1) | DE69430890T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08221993A (ja) * | 1994-03-25 | 1996-08-30 | Seiko Instr Inc | 半導体集積回路装置、その製造方法及びその駆動方法 |
JPH08335390A (ja) * | 1995-06-08 | 1996-12-17 | Mitsubishi Electric Corp | ダイナミック型半導体記憶装置 |
JP3036411B2 (ja) * | 1995-10-18 | 2000-04-24 | 日本電気株式会社 | 半導体記憶集積回路装置 |
US5706292A (en) | 1996-04-25 | 1998-01-06 | Micron Technology, Inc. | Layout for a semiconductor memory device having redundant elements |
US5966388A (en) * | 1997-01-06 | 1999-10-12 | Micron Technology, Inc. | High-speed test system for a memory device |
US6172935B1 (en) | 1997-04-25 | 2001-01-09 | Micron Technology, Inc. | Synchronous dynamic random access memory device |
KR100443527B1 (ko) * | 1999-06-30 | 2004-08-09 | 주식회사 하이닉스반도체 | 로오 리던던시 회로 |
KR100363085B1 (ko) * | 1999-11-05 | 2002-12-05 | 삼성전자 주식회사 | 리던던시 효율을 향상시키는 로우 리던던시 스킴을 갖는반도체장치 |
US6339559B1 (en) | 2001-02-12 | 2002-01-15 | International Business Machines Corporation | Decode scheme for programming antifuses arranged in banks |
KR100659502B1 (ko) * | 2005-02-04 | 2006-12-20 | 삼성전자주식회사 | 플래쉬 셀로 구현한 퓨즈 어레이 회로 |
JP2007059024A (ja) * | 2005-08-26 | 2007-03-08 | Micron Technol Inc | 温度補償された読み出し・検証動作をフラッシュ・メモリにおいて生成するための方法及び装置 |
JP2021048230A (ja) * | 2019-09-18 | 2021-03-25 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5046046A (en) * | 1978-03-10 | 1991-09-03 | Intel Corporation | Redundancy CAM using word line from memory |
FR2576132B1 (fr) * | 1985-01-15 | 1990-06-29 | Eurotechnique Sa | Memoire en circuit integre |
US4720817A (en) * | 1985-02-26 | 1988-01-19 | Texas Instruments Incorporated | Fuse selection of predecoder output |
KR920010347B1 (ko) * | 1989-12-30 | 1992-11-27 | 삼성전자주식회사 | 분할된 워드라인을 가지는 메모리장치의 리던던시 구조 |
JP2782948B2 (ja) * | 1990-11-16 | 1998-08-06 | 日本電気株式会社 | 半導体メモリ |
-
1993
- 1993-09-22 JP JP23638593A patent/JP2616544B2/ja not_active Expired - Fee Related
-
1994
- 1994-09-17 KR KR1019940023756A patent/KR0140350B1/ko not_active Application Discontinuation
- 1994-09-17 KR KR1019940023756A patent/KR950009744A/ko not_active IP Right Cessation
- 1994-09-19 EP EP94114729A patent/EP0645712B1/de not_active Expired - Lifetime
- 1994-09-19 DE DE69430890T patent/DE69430890T2/de not_active Expired - Fee Related
- 1994-09-22 US US08/310,311 patent/US5446693A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR0140350B1 (ko) | 1998-07-15 |
KR950009744A (ko) | 1995-04-24 |
JP2616544B2 (ja) | 1997-06-04 |
KR960012778A (ko) | 1996-04-20 |
EP0645712A3 (de) | 1998-11-11 |
US5446693A (en) | 1995-08-29 |
EP0645712B1 (de) | 2002-07-03 |
JPH0793991A (ja) | 1995-04-07 |
DE69430890T2 (de) | 2003-03-13 |
EP0645712A2 (de) | 1995-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |