DE69430890D1 - Halbleiterspeichergerät mit Redundanz - Google Patents

Halbleiterspeichergerät mit Redundanz

Info

Publication number
DE69430890D1
DE69430890D1 DE69430890T DE69430890T DE69430890D1 DE 69430890 D1 DE69430890 D1 DE 69430890D1 DE 69430890 T DE69430890 T DE 69430890T DE 69430890 T DE69430890 T DE 69430890T DE 69430890 D1 DE69430890 D1 DE 69430890D1
Authority
DE
Germany
Prior art keywords
redundancy
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69430890T
Other languages
English (en)
Other versions
DE69430890T2 (de
Inventor
Toshiharu Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69430890D1 publication Critical patent/DE69430890D1/de
Publication of DE69430890T2 publication Critical patent/DE69430890T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/24—Radio transmission systems, i.e. using radiation field for communication between two or more posts
    • H04B7/26—Radio transmission systems, i.e. using radiation field for communication between two or more posts at least one of which is mobile
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
DE69430890T 1993-09-22 1994-09-19 Halbleiterspeichergerät mit Redundanz Expired - Fee Related DE69430890T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23638593A JP2616544B2 (ja) 1993-09-22 1993-09-22 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69430890D1 true DE69430890D1 (de) 2002-08-08
DE69430890T2 DE69430890T2 (de) 2003-03-13

Family

ID=17000000

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69430890T Expired - Fee Related DE69430890T2 (de) 1993-09-22 1994-09-19 Halbleiterspeichergerät mit Redundanz

Country Status (5)

Country Link
US (1) US5446693A (de)
EP (1) EP0645712B1 (de)
JP (1) JP2616544B2 (de)
KR (2) KR950009744A (de)
DE (1) DE69430890T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08221993A (ja) * 1994-03-25 1996-08-30 Seiko Instr Inc 半導体集積回路装置、その製造方法及びその駆動方法
JPH08335390A (ja) * 1995-06-08 1996-12-17 Mitsubishi Electric Corp ダイナミック型半導体記憶装置
JP3036411B2 (ja) * 1995-10-18 2000-04-24 日本電気株式会社 半導体記憶集積回路装置
US5706292A (en) * 1996-04-25 1998-01-06 Micron Technology, Inc. Layout for a semiconductor memory device having redundant elements
US5966388A (en) 1997-01-06 1999-10-12 Micron Technology, Inc. High-speed test system for a memory device
US6172935B1 (en) 1997-04-25 2001-01-09 Micron Technology, Inc. Synchronous dynamic random access memory device
KR100443527B1 (ko) * 1999-06-30 2004-08-09 주식회사 하이닉스반도체 로오 리던던시 회로
KR100363085B1 (ko) * 1999-11-05 2002-12-05 삼성전자 주식회사 리던던시 효율을 향상시키는 로우 리던던시 스킴을 갖는반도체장치
US6339559B1 (en) 2001-02-12 2002-01-15 International Business Machines Corporation Decode scheme for programming antifuses arranged in banks
KR100659502B1 (ko) * 2005-02-04 2006-12-20 삼성전자주식회사 플래쉬 셀로 구현한 퓨즈 어레이 회로
JP2007059024A (ja) * 2005-08-26 2007-03-08 Micron Technol Inc 温度補償された読み出し・検証動作をフラッシュ・メモリにおいて生成するための方法及び装置
JP2021048230A (ja) * 2019-09-18 2021-03-25 キオクシア株式会社 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5046046A (en) * 1978-03-10 1991-09-03 Intel Corporation Redundancy CAM using word line from memory
FR2576132B1 (fr) * 1985-01-15 1990-06-29 Eurotechnique Sa Memoire en circuit integre
US4720817A (en) * 1985-02-26 1988-01-19 Texas Instruments Incorporated Fuse selection of predecoder output
KR920010347B1 (ko) * 1989-12-30 1992-11-27 삼성전자주식회사 분할된 워드라인을 가지는 메모리장치의 리던던시 구조
JP2782948B2 (ja) * 1990-11-16 1998-08-06 日本電気株式会社 半導体メモリ

Also Published As

Publication number Publication date
EP0645712A2 (de) 1995-03-29
KR960012778A (ko) 1996-04-20
JP2616544B2 (ja) 1997-06-04
JPH0793991A (ja) 1995-04-07
EP0645712A3 (de) 1998-11-11
DE69430890T2 (de) 2003-03-13
EP0645712B1 (de) 2002-07-03
US5446693A (en) 1995-08-29
KR950009744A (ko) 1995-04-24
KR0140350B1 (ko) 1998-07-15

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee