FR2576132B1 - Memoire en circuit integre - Google Patents
Memoire en circuit integreInfo
- Publication number
- FR2576132B1 FR2576132B1 FR8500525A FR8500525A FR2576132B1 FR 2576132 B1 FR2576132 B1 FR 2576132B1 FR 8500525 A FR8500525 A FR 8500525A FR 8500525 A FR8500525 A FR 8500525A FR 2576132 B1 FR2576132 B1 FR 2576132B1
- Authority
- FR
- France
- Prior art keywords
- memory
- repair
- integrated circuit
- circuit
- circuit memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000002950 deficient Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8500525A FR2576132B1 (fr) | 1985-01-15 | 1985-01-15 | Memoire en circuit integre |
US06/818,031 US4707810A (en) | 1985-01-15 | 1986-01-13 | Integrated circuit memory |
JP61007140A JP2549999B2 (ja) | 1985-01-15 | 1986-01-16 | 集積回路メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8500525A FR2576132B1 (fr) | 1985-01-15 | 1985-01-15 | Memoire en circuit integre |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2576132A1 FR2576132A1 (fr) | 1986-07-18 |
FR2576132B1 true FR2576132B1 (fr) | 1990-06-29 |
Family
ID=9315296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8500525A Expired - Lifetime FR2576132B1 (fr) | 1985-01-15 | 1985-01-15 | Memoire en circuit integre |
Country Status (3)
Country | Link |
---|---|
US (1) | US4707810A (fr) |
JP (1) | JP2549999B2 (fr) |
FR (1) | FR2576132B1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2576133B1 (fr) * | 1985-01-15 | 1991-04-26 | Eurotechnique Sa | Memoire en circuit integre a haute fiabilite |
US4939694A (en) * | 1986-11-03 | 1990-07-03 | Hewlett-Packard Company | Defect tolerant self-testing self-repairing memory system |
FR2607955B1 (fr) * | 1986-12-05 | 1989-02-10 | Eurotechnique Sa | Dispositif d'autosynchronisation des circuits de sortie d'une memoire |
JP2837433B2 (ja) * | 1989-06-05 | 1998-12-16 | 三菱電機株式会社 | 半導体記憶装置における不良ビット救済回路 |
US5471427A (en) * | 1989-06-05 | 1995-11-28 | Mitsubishi Denki Kabushiki Kaisha | Circuit for repairing defective bit in semiconductor memory device and repairing method |
FR2694826B1 (fr) * | 1992-08-13 | 1994-09-16 | Thomson Composants Militaires | Circuit intégré de mémoire avec protection contre des perturbations. |
JP2616544B2 (ja) * | 1993-09-22 | 1997-06-04 | 日本電気株式会社 | 半導体記憶装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4346459A (en) * | 1980-06-30 | 1982-08-24 | Inmos Corporation | Redundancy scheme for an MOS memory |
US4358833A (en) * | 1980-09-30 | 1982-11-09 | Intel Corporation | Memory redundancy apparatus for single chip memories |
JPS58137192A (ja) * | 1981-12-29 | 1983-08-15 | Fujitsu Ltd | 半導体記憶装置 |
JPS58130495A (ja) * | 1982-01-29 | 1983-08-03 | Toshiba Corp | 半導体記憶装置 |
JPS58164099A (ja) * | 1982-03-25 | 1983-09-28 | Toshiba Corp | 半導体メモリ− |
JPS58175195A (ja) * | 1982-04-05 | 1983-10-14 | Toshiba Corp | 半導体メモリ− |
US4532611A (en) * | 1982-11-01 | 1985-07-30 | Motorola, Inc. | Redundant memory circuit |
JPS59117794A (ja) * | 1982-12-24 | 1984-07-07 | Hitachi Micro Comput Eng Ltd | ダイナミック型ram |
JPS59126651A (ja) * | 1983-01-10 | 1984-07-21 | Mitsubishi Electric Corp | 冗長回路におけるプログラム回路装置 |
JPS59142800A (ja) * | 1983-02-04 | 1984-08-16 | Fujitsu Ltd | 半導体集積回路装置 |
JPS59151398A (ja) * | 1983-02-17 | 1984-08-29 | Mitsubishi Electric Corp | 半導体記憶装置 |
-
1985
- 1985-01-15 FR FR8500525A patent/FR2576132B1/fr not_active Expired - Lifetime
-
1986
- 1986-01-13 US US06/818,031 patent/US4707810A/en not_active Expired - Lifetime
- 1986-01-16 JP JP61007140A patent/JP2549999B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2576132A1 (fr) | 1986-07-18 |
US4707810A (en) | 1987-11-17 |
JP2549999B2 (ja) | 1996-10-30 |
JPS61222098A (ja) | 1986-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
D6 | Patent endorsed licences of rights | ||
ST | Notification of lapse |