DE69320540T2 - Herstellungsverfahren von Verbindungshalbleitern - Google Patents

Herstellungsverfahren von Verbindungshalbleitern

Info

Publication number
DE69320540T2
DE69320540T2 DE69320540T DE69320540T DE69320540T2 DE 69320540 T2 DE69320540 T2 DE 69320540T2 DE 69320540 T DE69320540 T DE 69320540T DE 69320540 T DE69320540 T DE 69320540T DE 69320540 T2 DE69320540 T2 DE 69320540T2
Authority
DE
Germany
Prior art keywords
group
etching
gas
iii
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69320540T
Other languages
German (de)
English (en)
Other versions
DE69320540D1 (de
Inventor
Hideki Tsuchiura-City Ibaraki Goto
Kenji Tsuchiura-City Ibaraki Shimoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14180792A external-priority patent/JP3158651B2/ja
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Application granted granted Critical
Publication of DE69320540D1 publication Critical patent/DE69320540D1/de
Publication of DE69320540T2 publication Critical patent/DE69320540T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials

Landscapes

  • Drying Of Semiconductors (AREA)
DE69320540T 1992-06-02 1993-06-02 Herstellungsverfahren von Verbindungshalbleitern Expired - Fee Related DE69320540T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14180792A JP3158651B2 (ja) 1991-07-04 1992-06-02 化合物半導体及びその製造方法

Publications (2)

Publication Number Publication Date
DE69320540D1 DE69320540D1 (de) 1998-10-01
DE69320540T2 true DE69320540T2 (de) 1999-02-18

Family

ID=15300589

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69320540T Expired - Fee Related DE69320540T2 (de) 1992-06-02 1993-06-02 Herstellungsverfahren von Verbindungshalbleitern

Country Status (3)

Country Link
US (1) US5400740A (oth)
EP (1) EP0573270B1 (oth)
DE (1) DE69320540T2 (oth)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5346581A (en) * 1993-04-01 1994-09-13 At&T Bell Laboratories Method of making a compound semiconductor device
JPH07211692A (ja) * 1994-01-12 1995-08-11 Sumitomo Electric Ind Ltd ＩｎＰ系化合物半導体の加工方法
KR0162865B1 (ko) * 1995-03-09 1999-02-01 김은영 반도체 패턴 측면의 에피성장율 조절방법
TW290743B (oth) * 1995-03-27 1996-11-11 Sumitomo Electric Industries
JP3341763B2 (ja) * 2000-04-27 2002-11-05 住友電気工業株式会社 化合物半導体装置の製造方法および化合物半導体装置の製造装置
EP1460694A1 (en) 2001-11-19 2004-09-22 Sanyo Electric Co., Ltd. Compound semiconductor light emitting device and its manufacturing method
JP2004343139A (ja) * 2001-11-19 2004-12-02 Sanyo Electric Co Ltd 化合物半導体発光素子
JP2005005727A (ja) * 2001-11-19 2005-01-06 Sanyo Electric Co Ltd 化合物半導体発光素子
JP2004055975A (ja) * 2002-07-23 2004-02-19 Sharp Corp 半導体発光装置およびその製造方法
JPWO2005031829A1 (ja) * 2003-09-24 2006-12-07 日本電気株式会社 半導体素子および半導体集積素子
JP2009088074A (ja) * 2007-09-28 2009-04-23 Mitsubishi Electric Corp 半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
JPS5670630A (en) * 1979-11-14 1981-06-12 Mitsubishi Monsanto Chem Co Manufacture of compound semiconductor by gas phase epitaxial growth
US4488914A (en) * 1982-10-29 1984-12-18 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch
US4671847A (en) * 1985-11-18 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Thermally-activated vapor etchant for InP
JP2735190B2 (ja) * 1987-04-02 1998-04-02 日本電気株式会社 分子線エピタキシヤル成長方法及び成長装置
US5068007A (en) * 1990-09-24 1991-11-26 Motorola, Inc. Etching of materials in a noncorrosive environment

Also Published As

Publication number Publication date
EP0573270B1 (en) 1998-08-26
EP0573270A2 (en) 1993-12-08
US5400740A (en) 1995-03-28
EP0573270A3 (oth) 1994-02-16
DE69320540D1 (de) 1998-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee