DE69320540T2 - Herstellungsverfahren von Verbindungshalbleitern - Google Patents
Herstellungsverfahren von VerbindungshalbleiternInfo
- Publication number
- DE69320540T2 DE69320540T2 DE69320540T DE69320540T DE69320540T2 DE 69320540 T2 DE69320540 T2 DE 69320540T2 DE 69320540 T DE69320540 T DE 69320540T DE 69320540 T DE69320540 T DE 69320540T DE 69320540 T2 DE69320540 T2 DE 69320540T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- compound semiconductors
- semiconductors
- compound
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14180792A JP3158651B2 (ja) | 1991-07-04 | 1992-06-02 | 化合物半導体及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69320540D1 DE69320540D1 (de) | 1998-10-01 |
DE69320540T2 true DE69320540T2 (de) | 1999-02-18 |
Family
ID=15300589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69320540T Expired - Fee Related DE69320540T2 (de) | 1992-06-02 | 1993-06-02 | Herstellungsverfahren von Verbindungshalbleitern |
Country Status (3)
Country | Link |
---|---|
US (1) | US5400740A (de) |
EP (1) | EP0573270B1 (de) |
DE (1) | DE69320540T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5346581A (en) * | 1993-04-01 | 1994-09-13 | At&T Bell Laboratories | Method of making a compound semiconductor device |
JPH07211692A (ja) * | 1994-01-12 | 1995-08-11 | Sumitomo Electric Ind Ltd | InP系化合物半導体の加工方法 |
KR0162865B1 (ko) * | 1995-03-09 | 1999-02-01 | 김은영 | 반도체 패턴 측면의 에피성장율 조절방법 |
TW290743B (de) * | 1995-03-27 | 1996-11-11 | Sumitomo Electric Industries | |
JP3341763B2 (ja) * | 2000-04-27 | 2002-11-05 | 住友電気工業株式会社 | 化合物半導体装置の製造方法および化合物半導体装置の製造装置 |
JP2004343139A (ja) * | 2001-11-19 | 2004-12-02 | Sanyo Electric Co Ltd | 化合物半導体発光素子 |
JP2005005727A (ja) * | 2001-11-19 | 2005-01-06 | Sanyo Electric Co Ltd | 化合物半導体発光素子 |
EP1460694A1 (de) | 2001-11-19 | 2004-09-22 | Sanyo Electric Co., Ltd. | Zusammengesetzte halbleiterlichtemissionseinrichtung und verfahren zu ihrer herstellung |
JP2004055975A (ja) * | 2002-07-23 | 2004-02-19 | Sharp Corp | 半導体発光装置およびその製造方法 |
US20070020933A1 (en) * | 2003-09-24 | 2007-01-25 | Koichi Naniwae | Method of cleaning treatment and method for manufacturing semiconductor device |
JP2009088074A (ja) * | 2007-09-28 | 2009-04-23 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4147571A (en) * | 1977-07-11 | 1979-04-03 | Hewlett-Packard Company | Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system |
JPS5670630A (en) * | 1979-11-14 | 1981-06-12 | Mitsubishi Monsanto Chem Co | Manufacture of compound semiconductor by gas phase epitaxial growth |
US4488914A (en) * | 1982-10-29 | 1984-12-18 | The United States Of America As Represented By The Secretary Of The Air Force | Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch |
US4671847A (en) * | 1985-11-18 | 1987-06-09 | The United States Of America As Represented By The Secretary Of The Navy | Thermally-activated vapor etchant for InP |
JP2735190B2 (ja) * | 1987-04-02 | 1998-04-02 | 日本電気株式会社 | 分子線エピタキシヤル成長方法及び成長装置 |
US5068007A (en) * | 1990-09-24 | 1991-11-26 | Motorola, Inc. | Etching of materials in a noncorrosive environment |
-
1993
- 1993-06-01 US US08/069,729 patent/US5400740A/en not_active Expired - Lifetime
- 1993-06-02 DE DE69320540T patent/DE69320540T2/de not_active Expired - Fee Related
- 1993-06-02 EP EP93304262A patent/EP0573270B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0573270A3 (de) | 1994-02-16 |
DE69320540D1 (de) | 1998-10-01 |
EP0573270A2 (de) | 1993-12-08 |
EP0573270B1 (de) | 1998-08-26 |
US5400740A (en) | 1995-03-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |