DE68910873T2 - Herstellungsverfahren von Halbleitervorrichtungen. - Google Patents

Herstellungsverfahren von Halbleitervorrichtungen.

Info

Publication number
DE68910873T2
DE68910873T2 DE89304433T DE68910873T DE68910873T2 DE 68910873 T2 DE68910873 T2 DE 68910873T2 DE 89304433 T DE89304433 T DE 89304433T DE 68910873 T DE68910873 T DE 68910873T DE 68910873 T2 DE68910873 T2 DE 68910873T2
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor devices
semiconductor
devices
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89304433T
Other languages
English (en)
Other versions
DE68910873D1 (de
Inventor
Masahiro Hosoda
Masafumi Kondo
Takahiro Suyama
Kazuaki Sasaki
Kosei Takahashi
Toshiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE68910873D1 publication Critical patent/DE68910873D1/de
Application granted granted Critical
Publication of DE68910873T2 publication Critical patent/DE68910873T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Dicing (AREA)
DE89304433T 1988-05-06 1989-05-03 Herstellungsverfahren von Halbleitervorrichtungen. Expired - Fee Related DE68910873T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63110964A JPH01280388A (ja) 1988-05-06 1988-05-06 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
DE68910873D1 DE68910873D1 (de) 1994-01-05
DE68910873T2 true DE68910873T2 (de) 1994-03-17

Family

ID=14548978

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89304433T Expired - Fee Related DE68910873T2 (de) 1988-05-06 1989-05-03 Herstellungsverfahren von Halbleitervorrichtungen.

Country Status (3)

Country Link
EP (1) EP0341034B1 (de)
JP (1) JPH01280388A (de)
DE (1) DE68910873T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275714A (ja) * 1993-03-22 1994-09-30 Mitsubishi Electric Corp 半導体レーザ装置素子基板、及び半導体レーザ装置の製造方法
JP4776478B2 (ja) * 2006-09-06 2011-09-21 東芝ディスクリートテクノロジー株式会社 化合物半導体素子及びその製造方法
JP4573863B2 (ja) * 2006-11-30 2010-11-04 三洋電機株式会社 窒化物系半導体素子の製造方法
JP6433644B2 (ja) 2013-06-07 2018-12-05 シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ 半導体ウェハのダイシング方法
DE102018100763A1 (de) * 2018-01-15 2019-07-18 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln von Halbleiterbauteilen und Halbleiterbauteil
CN115332944B (zh) * 2022-08-22 2023-12-26 武汉云岭光电股份有限公司 一种半导体激光器制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2438914A1 (de) * 1978-10-13 1980-05-09 Exxon Research Engineering Co
CA1201520A (en) * 1982-09-10 1986-03-04 Charles A. Burrus, Jr. Fabrication of cleaved semiconductor lasers

Also Published As

Publication number Publication date
EP0341034A2 (de) 1989-11-08
EP0341034B1 (de) 1993-11-24
DE68910873D1 (de) 1994-01-05
JPH01280388A (ja) 1989-11-10
EP0341034A3 (en) 1990-08-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee