DE69303042T2 - Verfahren zur Herstellung von lichtempfindlichen Halbleitervorrichtungen - Google Patents

Verfahren zur Herstellung von lichtempfindlichen Halbleitervorrichtungen

Info

Publication number
DE69303042T2
DE69303042T2 DE69303042T DE69303042T DE69303042T2 DE 69303042 T2 DE69303042 T2 DE 69303042T2 DE 69303042 T DE69303042 T DE 69303042T DE 69303042 T DE69303042 T DE 69303042T DE 69303042 T2 DE69303042 T2 DE 69303042T2
Authority
DE
Germany
Prior art keywords
semiconductor devices
photosensitive semiconductor
manufacturing photosensitive
manufacturing
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69303042T
Other languages
English (en)
Other versions
DE69303042D1 (de
Inventor
Takashi Iwasaki
Yasuhiro Iguchi
Naoyuki Yamabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69303042D1 publication Critical patent/DE69303042D1/de
Application granted granted Critical
Publication of DE69303042T2 publication Critical patent/DE69303042T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Light Receiving Elements (AREA)
DE69303042T 1992-02-07 1993-02-03 Verfahren zur Herstellung von lichtempfindlichen Halbleitervorrichtungen Expired - Fee Related DE69303042T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02295492A JP3288741B2 (ja) 1992-02-07 1992-02-07 半導体受光素子の製造方法

Publications (2)

Publication Number Publication Date
DE69303042D1 DE69303042D1 (de) 1996-07-18
DE69303042T2 true DE69303042T2 (de) 1996-11-28

Family

ID=12097009

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69303042T Expired - Fee Related DE69303042T2 (de) 1992-02-07 1993-02-03 Verfahren zur Herstellung von lichtempfindlichen Halbleitervorrichtungen

Country Status (7)

Country Link
US (1) US5316956A (de)
EP (1) EP0554846B1 (de)
JP (1) JP3288741B2 (de)
KR (1) KR960009702B1 (de)
CA (1) CA2088800C (de)
DE (1) DE69303042T2 (de)
DK (1) DK0554846T3 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3285981B2 (ja) * 1993-01-14 2002-05-27 浜松ホトニクス株式会社 半導体受光素子
US5621556A (en) * 1994-04-28 1997-04-15 Xerox Corporation Method of manufacturing active matrix LCD using five masks
DE69418870T2 (de) * 1994-07-13 1999-11-04 Hamamatsu Photonics Kk Halbleiter-Fotodetektor
KR100403824B1 (ko) * 1996-09-24 2004-05-17 삼성전자주식회사 포토다이오드 디텍터 및 그 제조방법
CA2307745A1 (en) * 1999-07-15 2001-01-15 Sumitomo Electric Industries, Ltd. Photodiode
KR100459547B1 (ko) * 2002-02-18 2004-12-04 삼성전자주식회사 포토다이오드 제조방법
JP4941625B2 (ja) * 2005-02-28 2012-05-30 住友電気工業株式会社 フォトダイオードの作製方法
US7608825B2 (en) * 2006-12-14 2009-10-27 Sumitomo Electric Industries, Ltd. Image pickup device, vision enhancement apparatus, night-vision apparatus, navigation support apparatus, and monitoring apparatus
CN110808312B (zh) * 2019-10-23 2020-11-24 武汉敏芯半导体股份有限公司 一种提高光电探测器芯片产出量的制备工艺方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948963A (ja) * 1982-09-13 1984-03-21 Nec Corp フオトトランジスタ
JPS60213067A (ja) * 1984-04-06 1985-10-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH0650723B2 (ja) * 1984-10-17 1994-06-29 日本電気株式会社 エピタキシヤル成長方法
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
JPH07118539B2 (ja) * 1988-02-10 1995-12-18 住友電気工業株式会社 半導体装置
JPH022691A (ja) * 1988-06-17 1990-01-08 Nec Corp 半導体受光素子
US4879250A (en) * 1988-09-29 1989-11-07 The Boeing Company Method of making a monolithic interleaved LED/PIN photodetector array
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法
US5185272A (en) * 1990-04-16 1993-02-09 Fujitsu Limited Method of producing semiconductor device having light receiving element with capacitance

Also Published As

Publication number Publication date
JP3288741B2 (ja) 2002-06-04
DK0554846T3 (da) 1996-08-19
CA2088800C (en) 1996-07-23
KR960009702B1 (en) 1996-07-23
CA2088800A1 (en) 1993-08-08
EP0554846B1 (de) 1996-06-12
KR930018061A (ko) 1993-09-21
DE69303042D1 (de) 1996-07-18
US5316956A (en) 1994-05-31
EP0554846A1 (de) 1993-08-11
JPH05218484A (ja) 1993-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee