DE69318956D1 - Verfahren zur Herstellung von Beschleunigungsmessern mittels der "Silizium auf Isolator"-Technologie - Google Patents

Verfahren zur Herstellung von Beschleunigungsmessern mittels der "Silizium auf Isolator"-Technologie

Info

Publication number
DE69318956D1
DE69318956D1 DE69318956T DE69318956T DE69318956D1 DE 69318956 D1 DE69318956 D1 DE 69318956D1 DE 69318956 T DE69318956 T DE 69318956T DE 69318956 T DE69318956 T DE 69318956T DE 69318956 D1 DE69318956 D1 DE 69318956D1
Authority
DE
Germany
Prior art keywords
insulator
silicon
technology
accelerometers
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69318956T
Other languages
English (en)
Other versions
DE69318956T2 (de
Inventor
Bernard Diem
Marie-Therese Delaye
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69318956D1 publication Critical patent/DE69318956D1/de
Application granted granted Critical
Publication of DE69318956T2 publication Critical patent/DE69318956T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/05—Type of movement
    • B81B2203/053—Translation according to an axis perpendicular to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0166—Controlling internal stress of deposited layers by ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S73/00—Measuring and testing
    • Y10S73/01—Vibration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S73/00—Measuring and testing
    • Y10S73/04—Piezoelectric

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Weting (AREA)
DE69318956T 1992-12-28 1993-12-23 Verfahren zur Herstellung von Beschleunigungsmessern mittels der "Silizium auf Isolator"-Technologie Expired - Lifetime DE69318956T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9215771A FR2700065B1 (fr) 1992-12-28 1992-12-28 Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant.

Publications (2)

Publication Number Publication Date
DE69318956D1 true DE69318956D1 (de) 1998-07-09
DE69318956T2 DE69318956T2 (de) 1998-12-17

Family

ID=9437153

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69318956T Expired - Lifetime DE69318956T2 (de) 1992-12-28 1993-12-23 Verfahren zur Herstellung von Beschleunigungsmessern mittels der "Silizium auf Isolator"-Technologie

Country Status (5)

Country Link
US (2) US5576250A (de)
EP (1) EP0605300B1 (de)
JP (1) JP3226402B2 (de)
DE (1) DE69318956T2 (de)
FR (1) FR2700065B1 (de)

Families Citing this family (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605598A (en) 1990-10-17 1997-02-25 The Charles Stark Draper Laboratory Inc. Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency
US5331852A (en) * 1991-09-11 1994-07-26 The Charles Stark Draper Laboratory, Inc. Electromagnetic rebalanced micromechanical transducer
JP3367113B2 (ja) * 1992-04-27 2003-01-14 株式会社デンソー 加速度センサ
DE4332057A1 (de) * 1993-09-21 1995-03-30 Siemens Ag Integrierte mikromechanische Sensorvorrichtung und Verfahren zu deren Herstellung
DE4418207C1 (de) * 1994-05-25 1995-06-22 Siemens Ag Thermischer Sensor/Aktuator in Halbleitermaterial
JP3435850B2 (ja) * 1994-10-28 2003-08-11 株式会社デンソー 半導体力学量センサ及びその製造方法
DE4439238A1 (de) * 1994-11-03 1996-05-09 Telefunken Microelectron Kapazitiver Beschleunigungssensor
US5640039A (en) * 1994-12-01 1997-06-17 Analog Devices, Inc. Conductive plane beneath suspended microstructure
GB9426363D0 (en) * 1994-12-29 1995-03-01 Lynxvale Ltd A micromechanical accelerometer
US5939171A (en) * 1995-01-24 1999-08-17 Siemens Aktiengesellschaft Micromechanical component
FR2732467B1 (fr) * 1995-02-10 1999-09-17 Bosch Gmbh Robert Capteur d'acceleration et procede de fabrication d'un tel capteur
FR2731715B1 (fr) * 1995-03-17 1997-05-16 Suisse Electronique Microtech Piece de micro-mecanique et procede de realisation
US6084257A (en) * 1995-05-24 2000-07-04 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
US6316796B1 (en) * 1995-05-24 2001-11-13 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
FR2736654B1 (fr) * 1995-07-13 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements
FR2736934B1 (fr) * 1995-07-21 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche
US5747961A (en) * 1995-10-11 1998-05-05 The Charles Stark Draper Laboratory, Inc. Beat frequency motor position detection scheme for tuning fork gyroscope and other sensors
US5721162A (en) * 1995-11-03 1998-02-24 Delco Electronics Corporation All-silicon monolithic motion sensor with integrated conditioning circuit
FR2742547B1 (fr) * 1995-12-19 1998-02-13 Sagem Accelerometre vibrant monolithique et son procede de fabrication
JP3430771B2 (ja) * 1996-02-05 2003-07-28 株式会社デンソー 半導体力学量センサの製造方法
US5817942A (en) 1996-02-28 1998-10-06 The Charles Stark Draper Laboratory, Inc. Capacitive in-plane accelerometer
US5747353A (en) * 1996-04-16 1998-05-05 National Semiconductor Corporation Method of making surface micro-machined accelerometer using silicon-on-insulator technology
DE19616970B4 (de) * 1996-04-27 2012-04-12 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanische Strukturen aufweisenden Halbleiterbauelementen
JP3198922B2 (ja) 1996-07-03 2001-08-13 株式会社村田製作所 静電容量型センサの製造方法
DE19632060B4 (de) * 1996-08-09 2012-05-03 Robert Bosch Gmbh Verfahren zur Herstellung eines Drehratensensors
FR2754349B1 (fr) * 1996-10-03 1998-10-30 Commissariat Energie Atomique Capteur, notamment accelerometre, et actionneur, et procede de fabrication d'une structure de capteur ou d'actionneur a isolation electrique localisee dans une plaque de substrat
FR2754386B1 (fr) 1996-10-03 1998-10-30 Commissariat Energie Atomique Structure comprenant une partie isolee dans un substrat massif et procede de realisation d'une telle structure
US5892153A (en) 1996-11-21 1999-04-06 The Charles Stark Draper Laboratory, Inc. Guard bands which control out-of-plane sensitivities in tuning fork gyroscopes and other sensors
KR100231711B1 (ko) * 1996-12-20 1999-11-15 양승택 마이크로 자이로스코프의 제작방법
KR100233848B1 (ko) * 1996-12-21 1999-12-01 정선종 마이크로 자이로스코프 제조 방법
FR2757948B1 (fr) * 1996-12-30 1999-01-22 Commissariat Energie Atomique Microsystemes pour analyses biologiques, leur utilisation pour la detection d'analytes et leur procede de realisation
JP3301334B2 (ja) * 1997-01-31 2002-07-15 三菱電機株式会社 センサ素子及びその製造方法
US5911156A (en) 1997-02-24 1999-06-08 The Charles Stark Draper Laboratory, Inc. Split electrode to minimize charge transients, motor amplitude mismatch errors, and sensitivity to vertical translation in tuning fork gyros and other devices
US5783973A (en) 1997-02-24 1998-07-21 The Charles Stark Draper Laboratory, Inc. Temperature insensitive silicon oscillator and precision voltage reference formed therefrom
EP0974817A4 (de) * 1997-04-03 2006-09-13 Yamatake Corp Schaltungsplatine,detektor sowie verfahren zu ihrer herstellung
US5952574A (en) 1997-04-29 1999-09-14 The Charles Stark Draper Laboratory, Inc. Trenches to reduce charging effects and to control out-of-plane sensitivities in tuning fork gyroscopes and other sensors
US6121552A (en) * 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
FR2764706B1 (fr) * 1997-06-17 1999-07-09 Commissariat Energie Atomique Accelerometre miniaturise du type a compensation par ressort de l'effet de la pesanteur et son procede de fabrication
US6048774A (en) * 1997-06-26 2000-04-11 Denso Corporation Method of manufacturing dynamic amount semiconductor sensor
US5955771A (en) * 1997-11-12 1999-09-21 Kulite Semiconductor Products, Inc. Sensors for use in high vibrational applications and methods for fabricating same
WO1999032890A1 (de) * 1997-12-19 1999-07-01 Siemens Aktiengesellschaft Mikromechanische vorrichtung und entsprechendes herstellungsverfahren
DE19817311B4 (de) * 1998-04-18 2007-03-22 Robert Bosch Gmbh Herstellungsverfahren für mikromechanisches Bauelement
US6287885B1 (en) 1998-05-08 2001-09-11 Denso Corporation Method for manufacturing semiconductor dynamic quantity sensor
US6088214A (en) * 1998-06-01 2000-07-11 Motorola, Inc. Voltage variable capacitor array and method of manufacture thereof
US6291875B1 (en) 1998-06-24 2001-09-18 Analog Devices Imi, Inc. Microfabricated structures with electrical isolation and interconnections
JP2002520862A (ja) 1998-07-08 2002-07-09 インフィネオン テクノロジース アクチエンゲゼルシャフト 充填される凹部を材料層内に形成する方法、およびこの方法により形成される集積回路装置
DE19847305B4 (de) * 1998-10-14 2011-02-03 Robert Bosch Gmbh Herstellungsverfahren für eine mikromechanische Vorrichtung
US6060336A (en) 1998-12-11 2000-05-09 C.F. Wan Incorporated Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore
KR100464309B1 (ko) * 1998-12-31 2005-02-28 삼성전자주식회사 면적변화정전용량형마이크로가속도계및그제조방법
WO2000042641A1 (fr) * 1999-01-13 2000-07-20 Mitsubishi Denki Kabushiki Kaisha Procede de fabrication d'un dispositif de silicium
JP4238437B2 (ja) * 1999-01-25 2009-03-18 株式会社デンソー 半導体力学量センサとその製造方法
US6174820B1 (en) 1999-02-16 2001-01-16 Sandia Corporation Use of silicon oxynitride as a sacrificial material for microelectromechanical devices
US6433401B1 (en) 1999-04-06 2002-08-13 Analog Devices Imi, Inc. Microfabricated structures with trench-isolation using bonded-substrates and cavities
US6703679B1 (en) 1999-08-31 2004-03-09 Analog Devices, Imi, Inc. Low-resistivity microelectromechanical structures with co-fabricated integrated circuit
US6440766B1 (en) 2000-02-16 2002-08-27 Analog Devices Imi, Inc. Microfabrication using germanium-based release masks
US6887391B1 (en) 2000-03-24 2005-05-03 Analog Devices, Inc. Fabrication and controlled release of structures using etch-stop trenches
US6290510B1 (en) 2000-07-27 2001-09-18 Xerox Corporation Spring structure with self-aligned release material
FI111457B (fi) * 2000-10-02 2003-07-31 Nokia Corp Mikromekaaninen rakenne
US6571628B1 (en) 2000-10-16 2003-06-03 Institute Of Microelectronics Z-axis accelerometer
JP4306149B2 (ja) * 2001-05-28 2009-07-29 株式会社デンソー 半導体装置の製造方法
US6583031B2 (en) 2001-07-25 2003-06-24 Onix Microsystems, Inc. Method of making a MEMS element having perpendicular portion formed from substrate
US6813412B2 (en) 2001-07-24 2004-11-02 Michael J. Daneman Mems element having perpendicular portion formed from substrate
WO2003031991A1 (fr) * 2001-10-11 2003-04-17 Orlov, Oleg Alekseewich Nanocapteur tunnel d'oscillations mecaniques et procede de fabrication correspondant
JP4117450B2 (ja) * 2002-03-18 2008-07-16 株式会社デンソー 半導体装置の製造方法
GB0206509D0 (en) * 2002-03-20 2002-05-01 Qinetiq Ltd Micro-Electromechanical systems
US6706549B1 (en) 2002-04-12 2004-03-16 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multi-functional micro electromechanical devices and method of bulk manufacturing same
US6866255B2 (en) * 2002-04-12 2005-03-15 Xerox Corporation Sputtered spring films with low stress anisotropy
DE10226028A1 (de) * 2002-06-12 2003-12-24 Bosch Gmbh Robert Bauelement und Verfahren zu dessen Herstellung
US6913941B2 (en) * 2002-09-09 2005-07-05 Freescale Semiconductor, Inc. SOI polysilicon trench refill perimeter oxide anchor scheme
US6829941B2 (en) 2002-10-10 2004-12-14 Andrey Gennadievich Alexenko Tunnel effect nanodetector of mechanical vibrations and method for preparation thereof
DE10247487A1 (de) * 2002-10-11 2004-05-06 Infineon Technologies Ag Membran und Verfahren zu deren Herstellung
JP3940063B2 (ja) * 2002-11-20 2007-07-04 松下電器産業株式会社 可変容量素子および可変容量素子内蔵集積回路
FR2849269B1 (fr) * 2002-12-20 2005-07-29 Soitec Silicon On Insulator Procede de realisation de cavites dans une plaque de silicium
DE60324960D1 (de) * 2002-12-20 2009-01-08 Soitec Silicon On Insulator Herstellung von hohlräumen in einer siliziumscheibe
US6770506B2 (en) * 2002-12-23 2004-08-03 Motorola, Inc. Release etch method for micromachined sensors
US6916728B2 (en) * 2002-12-23 2005-07-12 Freescale Semiconductor, Inc. Method for forming a semiconductor structure through epitaxial growth
US7122395B2 (en) * 2002-12-23 2006-10-17 Motorola, Inc. Method of forming semiconductor devices through epitaxy
EP1445670A1 (de) 2003-02-06 2004-08-11 ETA SA Manufacture Horlogère Suisse Spiralfeder der Resonatorunruh und Fabrikationsmethode
JP4085854B2 (ja) * 2003-03-20 2008-05-14 株式会社デンソー 半導体力学量センサの製造方法
FR2857002B1 (fr) * 2003-07-04 2005-10-21 Commissariat Energie Atomique Procede de desolidarisation d'une couche utile et composant obtenu par ce procede
US7015584B2 (en) * 2003-07-08 2006-03-21 Xerox Corporation High force metal plated spring structure
US6952041B2 (en) * 2003-07-25 2005-10-04 Robert Bosch Gmbh Anchors for microelectromechanical systems having an SOI substrate, and method of fabricating same
US7585744B2 (en) * 2003-12-08 2009-09-08 Freescale Semiconductor, Inc. Method of forming a seal for a semiconductor device
EP1640726B1 (de) * 2004-09-22 2009-09-09 STMicroelectronics S.r.l. Mikro-Elektromechanische Struktur mit Selbstkompensation von durch thermomechanische Spannungen hervorgerufenen thermischen Driften
EP1645847B1 (de) 2004-10-08 2014-07-02 STMicroelectronics Srl Mikro-elektromechanische Vorrichtung mit Temperaturkompensation und Verfahren zur Temperaturkompensation in einer mikro-elektromechanischen Vorrichtung
US7230440B2 (en) * 2004-10-21 2007-06-12 Palo Alto Research Center Incorporated Curved spring structure with elongated section located under cantilevered section
US8330485B2 (en) * 2004-10-21 2012-12-11 Palo Alto Research Center Incorporated Curved spring structure with downturned tip
FR2881568B1 (fr) * 2005-02-03 2011-01-14 Commissariat Energie Atomique Condensateur a capacite variable et a forme specifique, gyrometre comportant un tel condensateur et accelerometre comportant un tel condensateur
US7250322B2 (en) * 2005-03-16 2007-07-31 Delphi Technologies, Inc. Method of making microsensor
US20060207327A1 (en) * 2005-03-16 2006-09-21 Zarabadi Seyed R Linear accelerometer
JP4453587B2 (ja) * 2005-03-24 2010-04-21 株式会社デンソー 加速度センサ
JP4633574B2 (ja) 2005-08-08 2011-02-16 三菱電機株式会社 薄膜構造体およびその製造方法
US8043950B2 (en) 2005-10-26 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1818736A1 (de) * 2006-02-09 2007-08-15 The Swatch Group Research and Development Ltd. Stossfeste Spiralrolle
EP2090866A4 (de) * 2006-11-20 2011-08-31 Dainippon Printing Co Ltd Dynamischer mengensensor und herstellungsverfahren dafür
EP2060871A3 (de) * 2007-11-19 2012-12-26 Hitachi Ltd. Trägheitssensor
JP2009216693A (ja) * 2008-02-13 2009-09-24 Denso Corp 物理量センサ
EP2105807B1 (de) * 2008-03-28 2015-12-02 Montres Breguet SA Monoblockspirale zur Erhöhung der Kurve und ihr Herstellungsverfahren
DE102009029095B4 (de) * 2009-09-02 2017-05-18 Robert Bosch Gmbh Mikromechanisches Bauelement
US8569092B2 (en) * 2009-12-28 2013-10-29 General Electric Company Method for fabricating a microelectromechanical sensor with a piezoresistive type readout
KR20120131788A (ko) * 2011-05-26 2012-12-05 삼성전기주식회사 관성센서 및 그 제조방법
DE102010062056B4 (de) * 2010-11-26 2018-09-27 Robert Bosch Gmbh Mikromechanisches Bauteil
TWI447365B (zh) * 2011-05-24 2014-08-01 Univ Nat Kaohsiung Applied Sci Single crystal silicon thermal sensor and its preparation method
US8648432B2 (en) * 2011-11-28 2014-02-11 Texas Instruments Deutschland Gmbh Fully embedded micromechanical device, system on chip and method for manufacturing the same
DE102012201480B4 (de) * 2012-02-02 2020-08-20 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zu dessen Herstellung
US9010200B2 (en) 2012-08-06 2015-04-21 Amphenol Thermometrics, Inc. Device for measuring forces and method of making the same
FR3000050B1 (fr) 2012-12-20 2016-03-04 Tronic S Microsystems Dispositif micro-electromecanique possedant au moins deux elements deformables de dimensions differentes
DE102013216901A1 (de) * 2013-08-26 2015-02-26 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zur Herstellung eines mikromechanischen Bauelements
CN104748748B (zh) * 2013-12-31 2018-03-06 财团法人工业技术研究院 具pn界面的微机电装置
TWI538096B (zh) * 2013-12-31 2016-06-11 財團法人工業技術研究院 具ｐｎ界面的微機電裝置
KR101915954B1 (ko) * 2016-06-29 2018-11-08 주식회사 신성씨앤티 멤스 기반의 3축 가속도 센서
DE102018209500B4 (de) * 2018-06-14 2020-10-08 Robert Bosch Gmbh Mikromechanischer z-Inertialsensor
JP7383978B2 (ja) * 2019-10-23 2023-11-21 セイコーエプソン株式会社 物理量センサー、電子機器および移動体

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH642461A5 (fr) * 1981-07-02 1984-04-13 Centre Electron Horloger Accelerometre.
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置
FR2558263B1 (fr) * 1984-01-12 1986-04-25 Commissariat Energie Atomique Accelerometre directif et son procede de fabrication par microlithographie
JPS6197572A (ja) * 1984-10-19 1986-05-16 Nissan Motor Co Ltd 半導体加速度センサの製造方法
FR2580389B2 (fr) * 1985-04-16 1989-03-03 Sfena Accelerometre micro-usine a rappel electrostatique
US4679347A (en) * 1985-06-24 1987-07-14 Stirtz Ronald H Fishing flasher
FR2604791B1 (fr) * 1986-10-02 1988-11-25 Commissariat Energie Atomique Procedes de fabrication d'une jauge piezoresistive et d'un accelerometre comportant une telle jauge
US4851080A (en) * 1987-06-29 1989-07-25 Massachusetts Institute Of Technology Resonant accelerometer
DE3741036A1 (de) * 1987-12-03 1989-06-15 Fraunhofer Ges Forschung Mikromechanischer beschleunigungsmesser
US5121633A (en) * 1987-12-18 1992-06-16 Nissan Motor Co., Ltd. Semiconductor accelerometer
US4945765A (en) * 1988-08-31 1990-08-07 Kearfott Guidance & Navigation Corp. Silicon micromachined accelerometer
US4893509A (en) * 1988-12-27 1990-01-16 General Motors Corporation Method and product for fabricating a resonant-bridge microaccelerometer
US4969359A (en) * 1989-04-06 1990-11-13 Ford Motor Company Silicon accelerometer responsive to three orthogonal force components and method for fabricating
US4981552A (en) * 1989-04-06 1991-01-01 Ford Motor Company Method for fabricating a silicon accelerometer responsive to three orthogonal force components
US5006487A (en) * 1989-07-27 1991-04-09 Honeywell Inc. Method of making an electrostatic silicon accelerometer
CN1027011C (zh) * 1990-07-12 1994-12-14 涂相征 一种硅梁压阻加速度传感器及其制造方法
JP3096050B2 (ja) * 1990-08-09 2000-10-10 富士通株式会社 半導体装置の製造方法
EP0606220B1 (de) * 1991-06-12 1997-03-26 Harris Corporation Verfahren zur herstellung eines halbleiter-beschleunigungsmessers
DE4122435A1 (de) * 1991-07-06 1993-01-07 Bosch Gmbh Robert Verfahren zur herstellung von beschleunigungssensoren und beschleunigungssensor
FR2687777B1 (fr) * 1992-02-20 1994-05-20 Sextant Avionique Micro-capteur capacitif a faible capacite parasite et procede de fabrication.
JP3385688B2 (ja) * 1993-12-13 2003-03-10 株式会社デンソー 半導体ヨーレートセンサおよびその製造方法
DE4445553A1 (de) * 1993-12-21 1995-06-22 Nippon Denso Co Halbleiterbeschleunigungssensor

Also Published As

Publication number Publication date
EP0605300B1 (de) 1998-06-03
JPH0798327A (ja) 1995-04-11
JP3226402B2 (ja) 2001-11-05
FR2700065B1 (fr) 1995-02-10
US5780885A (en) 1998-07-14
FR2700065A1 (fr) 1994-07-01
US5576250A (en) 1996-11-19
DE69318956T2 (de) 1998-12-17
EP0605300A1 (de) 1994-07-06

Similar Documents

Publication Publication Date Title
DE69318956D1 (de) Verfahren zur Herstellung von Beschleunigungsmessern mittels der "Silizium auf Isolator"-Technologie
DE69431770D1 (de) Verfahren zur Herstellung von einem Silizium auf Isolator Halbleiterbauelement
DE19882836B4 (de) Verfahren zur Herstellung von dünnen Schichten auf Silizium-Stickstoffbasis
DE69012535D1 (de) Verfahren zur Herstellung von Hydrogensiloxanen.
DE69313697D1 (de) Verfahren zur Herstellung von Siloxanverbindungen
DE3850805D1 (de) Verfahren zur Herstellung von Epoxygruppen enthaltenden Silanen.
DE69316330D1 (de) Verfahren zur Herstellung von dicycloalkylsubstituierten Silanen
DE69411122D1 (de) Verfahren zur Herstellung von Epoxigruppen-enthaltenden Polysiloxanen
DE69302771D1 (de) Verfahren zur Herstellung von gesintertem Siliciumnitrid
DE69325350D1 (de) Verfahren zur Herstellung von Siliciumcarbidfasern
DE59307444D1 (de) Verfahren zur Herstellung von Polyethersiloxanen
DE69313556D1 (de) Verfahren zur Herstellung von zyklischen Depsipeptiden
DE3855580D1 (de) Verfahren zur Herstellung von Polyparaphenylensulfiden
DE59303217D1 (de) Verfahren zur Herstellung von Benzo[b]thiophenen
DE69312026D1 (de) Verfahren zur Herstellung von 2-Acetyl-Benzo B Thiophen
DE59010574D1 (de) Verfahren zur Herstellung von Alkylhalogensilanen
DE69314899D1 (de) Verfahren zur Herstellung von Polyaminoborazinen
DE59107293D1 (de) Verfahren zur Herstellung von N-substituierten Imidazolen
DE69329897D1 (de) Verfahren zur Verbesserung der Eigenschaften der Grenzfläche CaF2 auf Silizium
DE69402276D1 (de) Verfahren zur Herstellung von Silicium-Aluminium-Oxid-Fasern
DE69315297D1 (de) Verfahren zur Herstellung von Omega-Alkenylchlorsilanen
DE59309922D1 (de) Verfahren zur Herstellung von substituierten 2,3-Difluorpyridinen
DE69316300D1 (de) Verfahren zur Herstellung von cyclischen Organohydrosiloxanen
DE69315317D1 (de) Verfahren zur Herstellung von beta-Cyanoalkylsilanen
DE69625102D1 (de) Verfahren zur Herstellung von 3-Methyltetrahydrofuran

Legal Events

Date Code Title Description
8364 No opposition during term of opposition