DE19882836B4 - Verfahren zur Herstellung von dünnen Schichten auf Silizium-Stickstoffbasis - Google Patents

Verfahren zur Herstellung von dünnen Schichten auf Silizium-Stickstoffbasis Download PDF

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Publication number
DE19882836B4
DE19882836B4 DE19882836T DE19882836T DE19882836B4 DE 19882836 B4 DE19882836 B4 DE 19882836B4 DE 19882836 T DE19882836 T DE 19882836T DE 19882836 T DE19882836 T DE 19882836T DE 19882836 B4 DE19882836 B4 DE 19882836B4
Authority
DE
Germany
Prior art keywords
preparation
thin layers
layers based
silicon nitrogen
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19882836T
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English (en)
Other versions
DE19882836T1 (de
Inventor
Barry C Arkles
Alain E Kaloyeros
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Research Foundation of State University of New York
Gelest Inc
Original Assignee
Research Foundation of State University of New York
Gelest Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Foundation of State University of New York, Gelest Inc filed Critical Research Foundation of State University of New York
Publication of DE19882836T1 publication Critical patent/DE19882836T1/de
Application granted granted Critical
Publication of DE19882836B4 publication Critical patent/DE19882836B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE19882836T 1997-11-26 1998-11-03 Verfahren zur Herstellung von dünnen Schichten auf Silizium-Stickstoffbasis Expired - Lifetime DE19882836B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/979,641 US5968611A (en) 1997-11-26 1997-11-26 Silicon nitrogen-based films and method of making the same
PCT/US1998/023331 WO1999027154A1 (en) 1997-11-26 1998-11-03 Silicon nitrogen-based films and method of making the same

Publications (2)

Publication Number Publication Date
DE19882836T1 DE19882836T1 (de) 2001-03-08
DE19882836B4 true DE19882836B4 (de) 2005-04-28

Family

ID=25527034

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19882836T Expired - Lifetime DE19882836B4 (de) 1997-11-26 1998-11-03 Verfahren zur Herstellung von dünnen Schichten auf Silizium-Stickstoffbasis

Country Status (6)

Country Link
US (1) US5968611A (de)
JP (1) JP4280412B2 (de)
KR (1) KR20010032496A (de)
AU (1) AU1208699A (de)
DE (1) DE19882836B4 (de)
WO (1) WO1999027154A1 (de)

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US5969382A (en) * 1997-11-03 1999-10-19 Delco Electronics Corporation EPROM in high density CMOS having added substrate diffusion
KR100274601B1 (ko) * 1997-11-11 2001-02-01 윤종용 반도체장치의식각마스크형성방법
US7804115B2 (en) 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
US6274292B1 (en) 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US6045954A (en) * 1998-06-12 2000-04-04 Industrial Technology Research Institute Formation of silicon nitride film for a phase shift mask at 193 nm
US6281100B1 (en) 1998-09-03 2001-08-28 Micron Technology, Inc. Semiconductor processing methods
US6268282B1 (en) 1998-09-03 2001-07-31 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
US7235499B1 (en) 1999-01-20 2007-06-26 Micron Technology, Inc. Semiconductor processing methods
US7067414B1 (en) * 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US6440860B1 (en) 2000-01-18 2002-08-27 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US20010051215A1 (en) * 2000-04-13 2001-12-13 Gelest, Inc. Methods for chemical vapor deposition of titanium-silicon-nitrogen films
US6500774B1 (en) * 2000-06-30 2002-12-31 Advanced Micro Devices, Inc. Method and apparatus for an increased throughput furnace nitride BARC process
US7651910B2 (en) * 2002-05-17 2010-01-26 Micron Technology, Inc. Methods of forming programmable memory devices
JP4358492B2 (ja) * 2002-09-25 2009-11-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
US20050145177A1 (en) * 2003-12-30 2005-07-07 Mcswiney Michael Method and apparatus for low temperature silicon nitride deposition
KR100560654B1 (ko) * 2004-01-08 2006-03-16 삼성전자주식회사 질화실리콘막을 형성을 위한 질소화합물 및 이를 이용한질화실리콘 막의 형성방법
JP4279176B2 (ja) * 2004-03-02 2009-06-17 株式会社アルバック シリコン窒化膜の形成方法
US7550067B2 (en) * 2004-06-25 2009-06-23 Guardian Industries Corp. Coated article with ion treated underlayer and corresponding method
US20070031598A1 (en) * 2005-07-08 2007-02-08 Yoshikazu Okuyama Method for depositing silicon-containing films
US20070010072A1 (en) * 2005-07-09 2007-01-11 Aviza Technology, Inc. Uniform batch film deposition process and films so produced
US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth
WO2009096951A1 (en) * 2008-01-30 2009-08-06 Applied Materials, Inc. System and method for pre-ionization of surface wave launched plasma discharge sources
JP5375732B2 (ja) * 2010-04-26 2013-12-25 株式会社島津製作所 バリヤ膜を形成する方法およびバリヤ膜を形成するために用いるｃｖｄ装置
KR101333831B1 (ko) * 2010-07-07 2013-11-29 울산대학교 산학협력단 반도체 소자의 표면 처리 방법 및 그 표면 처리 장치
US9446958B2 (en) 2011-10-07 2016-09-20 L'Air Liquide Societe Anonyme L'Etude Et L'Exploitation Des Procedes Georges Claude Apparatus and method for the condensed phase production of trisilylamine
US9701540B2 (en) 2011-10-07 2017-07-11 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Apparatus and method for the condensed phase production of trisilylamine
EP3590888B1 (de) 2011-10-07 2022-02-16 Air Liquide Advanced Materials LLC Vorrichtung und verfahren zur herstellung von trisilylamin in einer kondensierten phase
US20150030885A1 (en) * 2013-07-29 2015-01-29 Silcotek Corp. Coated article and chemical vapor deposition process
EP3049499B1 (de) 2013-09-27 2020-07-22 L'air Liquide, Société Anonyme Pour L'Étude Et L'exploitation Des Procédés Georges Claude Aminsubstituierte trisilylamin- und tridisilylamin-verbindungen
KR102079501B1 (ko) * 2014-10-24 2020-02-20 버슘머트리얼즈 유에스, 엘엘씨 규소-함유 필름의 증착을 위한 조성물 및 이를 사용하는 방법
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US11142462B2 (en) * 2016-09-26 2021-10-12 Jiangsu Nata Opto-Electronic Materials Co. Ltd. Trichlorodisilane
US20200075325A1 (en) * 2018-08-29 2020-03-05 Asm Ip Holding B.V. Film forming method
KR20210091825A (ko) * 2018-12-13 2021-07-22 어플라이드 머티어리얼스, 인코포레이티드 인 도핑된 실리콘 나이트라이드 막들을 증착하기 위한 방법들

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4200666A (en) * 1978-08-02 1980-04-29 Texas Instruments Incorporated Single component monomer for silicon nitride deposition
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279669A (en) * 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4200666A (en) * 1978-08-02 1980-04-29 Texas Instruments Incorporated Single component monomer for silicon nitride deposition
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A. Hochberg et al., Mat. Res. Soc. Symp. 24 (1991)S. 509-514 *
J. Electrochem. Soc., 133(1) 1986, 233-34 *

Also Published As

Publication number Publication date
AU1208699A (en) 1999-06-15
US5968611A (en) 1999-10-19
KR20010032496A (ko) 2001-04-25
WO1999027154A1 (en) 1999-06-03
DE19882836T1 (de) 2001-03-08
JP4280412B2 (ja) 2009-06-17
JP2001524601A (ja) 2001-12-04

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