DE19882836T1 - Filme auf Silizium-Stickstoffbasis und Verfahren zur Herstellung derselben - Google Patents
Filme auf Silizium-Stickstoffbasis und Verfahren zur Herstellung derselbenInfo
- Publication number
- DE19882836T1 DE19882836T1 DE19882836T DE19882836T DE19882836T1 DE 19882836 T1 DE19882836 T1 DE 19882836T1 DE 19882836 T DE19882836 T DE 19882836T DE 19882836 T DE19882836 T DE 19882836T DE 19882836 T1 DE19882836 T1 DE 19882836T1
- Authority
- DE
- Germany
- Prior art keywords
- producing same
- based films
- silicon nitrogen
- nitrogen
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/979,641 US5968611A (en) | 1997-11-26 | 1997-11-26 | Silicon nitrogen-based films and method of making the same |
PCT/US1998/023331 WO1999027154A1 (en) | 1997-11-26 | 1998-11-03 | Silicon nitrogen-based films and method of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE19882836T1 true DE19882836T1 (de) | 2001-03-08 |
DE19882836B4 DE19882836B4 (de) | 2005-04-28 |
Family
ID=25527034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19882836T Expired - Lifetime DE19882836B4 (de) | 1997-11-26 | 1998-11-03 | Verfahren zur Herstellung von dünnen Schichten auf Silizium-Stickstoffbasis |
Country Status (6)
Country | Link |
---|---|
US (1) | US5968611A (de) |
JP (1) | JP4280412B2 (de) |
KR (1) | KR20010032496A (de) |
AU (1) | AU1208699A (de) |
DE (1) | DE19882836B4 (de) |
WO (1) | WO1999027154A1 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5969382A (en) * | 1997-11-03 | 1999-10-19 | Delco Electronics Corporation | EPROM in high density CMOS having added substrate diffusion |
KR100274601B1 (ko) * | 1997-11-11 | 2001-02-01 | 윤종용 | 반도체장치의식각마스크형성방법 |
US7804115B2 (en) | 1998-02-25 | 2010-09-28 | Micron Technology, Inc. | Semiconductor constructions having antireflective portions |
US6274292B1 (en) | 1998-02-25 | 2001-08-14 | Micron Technology, Inc. | Semiconductor processing methods |
US6045954A (en) * | 1998-06-12 | 2000-04-04 | Industrial Technology Research Institute | Formation of silicon nitride film for a phase shift mask at 193 nm |
US6268282B1 (en) | 1998-09-03 | 2001-07-31 | Micron Technology, Inc. | Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks |
US6281100B1 (en) | 1998-09-03 | 2001-08-28 | Micron Technology, Inc. | Semiconductor processing methods |
US6828683B2 (en) | 1998-12-23 | 2004-12-07 | Micron Technology, Inc. | Semiconductor devices, and semiconductor processing methods |
US7235499B1 (en) | 1999-01-20 | 2007-06-26 | Micron Technology, Inc. | Semiconductor processing methods |
US7067414B1 (en) | 1999-09-01 | 2006-06-27 | Micron Technology, Inc. | Low k interlevel dielectric layer fabrication methods |
US6440860B1 (en) | 2000-01-18 | 2002-08-27 | Micron Technology, Inc. | Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride |
US20010051215A1 (en) * | 2000-04-13 | 2001-12-13 | Gelest, Inc. | Methods for chemical vapor deposition of titanium-silicon-nitrogen films |
US6500774B1 (en) * | 2000-06-30 | 2002-12-31 | Advanced Micro Devices, Inc. | Method and apparatus for an increased throughput furnace nitride BARC process |
US7651910B2 (en) * | 2002-05-17 | 2010-01-26 | Micron Technology, Inc. | Methods of forming programmable memory devices |
JP4358492B2 (ja) * | 2002-09-25 | 2009-11-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
US20050145177A1 (en) * | 2003-12-30 | 2005-07-07 | Mcswiney Michael | Method and apparatus for low temperature silicon nitride deposition |
KR100560654B1 (ko) * | 2004-01-08 | 2006-03-16 | 삼성전자주식회사 | 질화실리콘막을 형성을 위한 질소화합물 및 이를 이용한질화실리콘 막의 형성방법 |
JP4279176B2 (ja) * | 2004-03-02 | 2009-06-17 | 株式会社アルバック | シリコン窒化膜の形成方法 |
US7550067B2 (en) * | 2004-06-25 | 2009-06-23 | Guardian Industries Corp. | Coated article with ion treated underlayer and corresponding method |
WO2007008653A2 (en) * | 2005-07-08 | 2007-01-18 | Aviza Technology, Inc. | Method for depositing silicon-containing films |
US20070010072A1 (en) * | 2005-07-09 | 2007-01-11 | Aviza Technology, Inc. | Uniform batch film deposition process and films so produced |
US20090087967A1 (en) * | 2005-11-14 | 2009-04-02 | Todd Michael A | Precursors and processes for low temperature selective epitaxial growth |
JP2011514441A (ja) * | 2008-01-30 | 2011-05-06 | アプライド マテリアルズ インコーポレイテッド | 表面波開始プラズマ放電源の予備イオン化のためのシステム及び方法 |
JP5375732B2 (ja) * | 2010-04-26 | 2013-12-25 | 株式会社島津製作所 | バリヤ膜を形成する方法およびバリヤ膜を形成するために用いるcvd装置 |
KR101333831B1 (ko) * | 2010-07-07 | 2013-11-29 | 울산대학교 산학협력단 | 반도체 소자의 표면 처리 방법 및 그 표면 처리 장치 |
US9446958B2 (en) | 2011-10-07 | 2016-09-20 | L'Air Liquide Societe Anonyme L'Etude Et L'Exploitation Des Procedes Georges Claude | Apparatus and method for the condensed phase production of trisilylamine |
US9701540B2 (en) | 2011-10-07 | 2017-07-11 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Apparatus and method for the condensed phase production of trisilylamine |
JP6175439B2 (ja) | 2011-10-07 | 2017-08-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 濃縮相によるトリシリルアミンの製造のための装置及び方法 |
US20150030885A1 (en) * | 2013-07-29 | 2015-01-29 | Silcotek Corp. | Coated article and chemical vapor deposition process |
US9920077B2 (en) | 2013-09-27 | 2018-03-20 | L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof |
EP3209813B1 (de) * | 2014-10-24 | 2019-03-13 | Versum Materials US, LLC | Zusammensetzungen und verfahren mit verwendung davon zur abscheidung von siliciumhaltigem film |
US11124876B2 (en) | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
KR102349808B1 (ko) * | 2016-09-26 | 2022-01-12 | 나타 세미컨덕터 머티리얼스 컴퍼니, 리미티드 | 트라이클로로다이실란 |
US20200075325A1 (en) * | 2018-08-29 | 2020-03-05 | Asm Ip Holding B.V. | Film forming method |
SG11202105295TA (en) * | 2018-12-13 | 2021-06-29 | Applied Materials Inc | Methods for depositing phosphorus-doped silicon nitride films |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4200666A (en) * | 1978-08-02 | 1980-04-29 | Texas Instruments Incorporated | Single component monomer for silicon nitride deposition |
US5244698A (en) * | 1985-02-21 | 1993-09-14 | Canon Kabushiki Kaisha | Process for forming deposited film |
US5279669A (en) * | 1991-12-13 | 1994-01-18 | International Business Machines Corporation | Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions |
-
1997
- 1997-11-26 US US08/979,641 patent/US5968611A/en not_active Expired - Lifetime
-
1998
- 1998-11-03 AU AU12086/99A patent/AU1208699A/en not_active Abandoned
- 1998-11-03 DE DE19882836T patent/DE19882836B4/de not_active Expired - Lifetime
- 1998-11-03 JP JP2000522292A patent/JP4280412B2/ja not_active Expired - Lifetime
- 1998-11-03 KR KR1020007005738A patent/KR20010032496A/ko not_active Application Discontinuation
- 1998-11-03 WO PCT/US1998/023331 patent/WO1999027154A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20010032496A (ko) | 2001-04-25 |
US5968611A (en) | 1999-10-19 |
AU1208699A (en) | 1999-06-15 |
JP2001524601A (ja) | 2001-12-04 |
DE19882836B4 (de) | 2005-04-28 |
WO1999027154A1 (en) | 1999-06-03 |
JP4280412B2 (ja) | 2009-06-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8607 | Notification of search results after publication | ||
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |