DE69310422T2 - Vorrichtung für Dampfphasenepitaxie von zusammengesetzten Halbleitern - Google Patents

Vorrichtung für Dampfphasenepitaxie von zusammengesetzten Halbleitern

Info

Publication number
DE69310422T2
DE69310422T2 DE69310422T DE69310422T DE69310422T2 DE 69310422 T2 DE69310422 T2 DE 69310422T2 DE 69310422 T DE69310422 T DE 69310422T DE 69310422 T DE69310422 T DE 69310422T DE 69310422 T2 DE69310422 T2 DE 69310422T2
Authority
DE
Germany
Prior art keywords
vapor phase
phase epitaxy
compound semiconductors
semiconductors
epitaxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69310422T
Other languages
English (en)
Other versions
DE69310422D1 (de
Inventor
Atsushi Watanabe
Hiroshi Amano
Kazumasa Hiramatsu
Isamu Akasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Application granted granted Critical
Publication of DE69310422D1 publication Critical patent/DE69310422D1/de
Publication of DE69310422T2 publication Critical patent/DE69310422T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
DE69310422T 1992-03-06 1993-02-01 Vorrichtung für Dampfphasenepitaxie von zusammengesetzten Halbleitern Expired - Fee Related DE69310422T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04049711A JP3131005B2 (ja) 1992-03-06 1992-03-06 化合物半導体気相成長装置

Publications (2)

Publication Number Publication Date
DE69310422D1 DE69310422D1 (de) 1997-06-12
DE69310422T2 true DE69310422T2 (de) 1997-11-06

Family

ID=12838776

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69310422T Expired - Fee Related DE69310422T2 (de) 1992-03-06 1993-02-01 Vorrichtung für Dampfphasenepitaxie von zusammengesetzten Halbleitern

Country Status (4)

Country Link
US (1) US5370738A (de)
EP (1) EP0559326B1 (de)
JP (1) JP3131005B2 (de)
DE (1) DE69310422T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016101003A1 (de) 2016-01-21 2017-07-27 Aixtron Se CVD-Vorrichtung mit einem als Baugruppe aus dem Reaktorgehäuse entnehmbaren Prozesskammergehäuse

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JP4466723B2 (ja) 2007-11-21 2010-05-26 住友電気工業株式会社 有機金属気相成長装置
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JP5587205B2 (ja) * 2007-12-20 2014-09-10 ソイテック エピタキシャル成長基板に前駆体ガスを送出するための装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016101003A1 (de) 2016-01-21 2017-07-27 Aixtron Se CVD-Vorrichtung mit einem als Baugruppe aus dem Reaktorgehäuse entnehmbaren Prozesskammergehäuse

Also Published As

Publication number Publication date
DE69310422D1 (de) 1997-06-12
US5370738A (en) 1994-12-06
EP0559326A1 (de) 1993-09-08
EP0559326B1 (de) 1997-05-07
JPH06216030A (ja) 1994-08-05
JP3131005B2 (ja) 2001-01-31

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee