DE69603126T2 - Vorrichtung für epitaxiales Aufwachsen aus der Gasphase - Google Patents

Vorrichtung für epitaxiales Aufwachsen aus der Gasphase

Info

Publication number
DE69603126T2
DE69603126T2 DE69603126T DE69603126T DE69603126T2 DE 69603126 T2 DE69603126 T2 DE 69603126T2 DE 69603126 T DE69603126 T DE 69603126T DE 69603126 T DE69603126 T DE 69603126T DE 69603126 T2 DE69603126 T2 DE 69603126T2
Authority
DE
Germany
Prior art keywords
gas phase
epitaxial growth
epitaxial
growth
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69603126T
Other languages
English (en)
Other versions
DE69603126D1 (de
Inventor
Hitoshi Habuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69603126D1 publication Critical patent/DE69603126D1/de
Publication of DE69603126T2 publication Critical patent/DE69603126T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE69603126T 1995-04-27 1996-04-26 Vorrichtung für epitaxiales Aufwachsen aus der Gasphase Expired - Fee Related DE69603126T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7127122A JPH08306632A (ja) 1995-04-27 1995-04-27 気相エピタキシャル成長装置

Publications (2)

Publication Number Publication Date
DE69603126D1 DE69603126D1 (de) 1999-08-12
DE69603126T2 true DE69603126T2 (de) 2000-04-06

Family

ID=14952158

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69603126T Expired - Fee Related DE69603126T2 (de) 1995-04-27 1996-04-26 Vorrichtung für epitaxiales Aufwachsen aus der Gasphase

Country Status (4)

Country Link
US (1) US5672204A (de)
EP (1) EP0743379B1 (de)
JP (1) JPH08306632A (de)
DE (1) DE69603126T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008057909B4 (de) 2007-12-26 2021-08-19 Samsung Electronics Co., Ltd. Vorrichtung für die chemische Gasphasenabscheidung

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US6410090B1 (en) 1998-09-29 2002-06-25 Applied Materials, Inc. Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films
CA2387341A1 (en) * 1999-11-02 2001-05-10 Tokyo Electron Limited Method and apparatus for supercritical processing of multiple workpieces
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US20040028810A1 (en) * 2000-10-16 2004-02-12 Primaxx, Inc. Chemical vapor deposition reactor and method for utilizing vapor vortex
US6428847B1 (en) * 2000-10-16 2002-08-06 Primaxx, Inc. Vortex based CVD reactor
EP1573779A4 (de) * 2001-04-10 2006-11-15 Tokyo Electron Ltd Hochdruckverarbeitungskammer für ein halbleitersubstrat mit strömungsverbesserungsmerkmalen
US20030047138A1 (en) * 2001-09-11 2003-03-13 Ceramoptec Industries, Inc. Spiral gas flow plasma reactor
KR20040047874A (ko) * 2001-09-29 2004-06-05 크리, 인코포레이티드 반전(反轉)된 화학 증착(ｃｖｄ)용 장치
US20040040660A1 (en) * 2001-10-03 2004-03-04 Biberger Maximilian Albert High pressure processing chamber for multiple semiconductor substrates
DE10157946A1 (de) * 2001-11-27 2003-06-05 Osram Opto Semiconductors Gmbh Vorrichtung und Verfahren zum Wachsen von Schichten auf ein Substrat
US7021635B2 (en) * 2003-02-06 2006-04-04 Tokyo Electron Limited Vacuum chuck utilizing sintered material and method of providing thereof
JP2004288899A (ja) * 2003-03-24 2004-10-14 Tokyo Electron Ltd 成膜方法および基板処理装置
US7270137B2 (en) * 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US20050035514A1 (en) * 2003-08-11 2005-02-17 Supercritical Systems, Inc. Vacuum chuck apparatus and method for holding a wafer during high pressure processing
US7767145B2 (en) 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
JP2006303152A (ja) * 2005-04-20 2006-11-02 Fuji Electric Holdings Co Ltd エピタキシャル成膜装置およびエピタキシャル成膜方法
FI119478B (fi) * 2005-04-22 2008-11-28 Beneq Oy Reaktori
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
JP2009093711A (ja) * 2007-10-04 2009-04-30 Hoya Corp 磁気記録媒体の製造方法および磁気記録媒体
US8291857B2 (en) * 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
WO2012139006A2 (en) * 2011-04-07 2012-10-11 Veeco Instruments Inc. Metal-organic vapor phase epitaxy system and process
CN107109645B (zh) * 2015-01-02 2021-02-26 应用材料公司 处理腔室
CA2974387A1 (en) * 2016-08-30 2018-02-28 Rolls-Royce Corporation Swirled flow chemical vapor deposition
JP6698489B2 (ja) * 2016-09-26 2020-05-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2020126881A (ja) * 2019-02-01 2020-08-20 東京エレクトロン株式会社 基板処理装置およびクリーニング方法
JP2022107873A (ja) * 2021-01-12 2022-07-25 東京エレクトロン株式会社 基板処理装置及びクリーニング方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
FR1518843A (fr) * 1967-02-13 1968-03-29 Radiotechnique Coprim Rtc Dispositif pour le dépôt de couches minces sur des supports semi-conducteurs
US4033286A (en) * 1976-07-12 1977-07-05 California Institute Of Technology Chemical vapor deposition reactor
US4323031A (en) * 1979-04-30 1982-04-06 Alan Kaplan Crystal plating apparatus
US4512283A (en) * 1982-02-01 1985-04-23 Texas Instruments Incorporated Plasma reactor sidewall shield
JPH01189692A (ja) * 1988-01-26 1989-07-28 Toshiba Corp 登録文字種のドットマトリクス変換方法
FR2638020B1 (fr) * 1988-10-14 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a collecteur de gaz ameliore
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008057909B4 (de) 2007-12-26 2021-08-19 Samsung Electronics Co., Ltd. Vorrichtung für die chemische Gasphasenabscheidung

Also Published As

Publication number Publication date
JPH08306632A (ja) 1996-11-22
US5672204A (en) 1997-09-30
DE69603126D1 (de) 1999-08-12
EP0743379A1 (de) 1996-11-20
EP0743379B1 (de) 1999-07-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee