DE69301821D1 - Ii-vi laserdiode mit einzelnem quantum well ohne mantelschichten - Google Patents

Ii-vi laserdiode mit einzelnem quantum well ohne mantelschichten

Info

Publication number
DE69301821D1
DE69301821D1 DE69301821T DE69301821T DE69301821D1 DE 69301821 D1 DE69301821 D1 DE 69301821D1 DE 69301821 T DE69301821 T DE 69301821T DE 69301821 T DE69301821 T DE 69301821T DE 69301821 D1 DE69301821 D1 DE 69301821D1
Authority
DE
Germany
Prior art keywords
laser diode
quantum well
single quantum
sheet layers
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69301821T
Other languages
English (en)
Other versions
DE69301821T2 (de
Inventor
Hwa Cheng
James Depuydt
Michael Haase
Jun Qiu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Co
Original Assignee
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining and Manufacturing Co filed Critical Minnesota Mining and Manufacturing Co
Application granted granted Critical
Publication of DE69301821D1 publication Critical patent/DE69301821D1/de
Publication of DE69301821T2 publication Critical patent/DE69301821T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/342—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing short period superlattices [SPS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69301821T 1992-05-22 1993-05-14 Ii-vi laserdiode mit einzelnem quantum well ohne mantelschichten Expired - Fee Related DE69301821T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/887,468 US5319219A (en) 1992-05-22 1992-05-22 Single quantum well II-VI laser diode without cladding
PCT/US1993/004670 WO1993024980A1 (en) 1992-05-22 1993-05-14 Single quantum well ii-vi laser diode without cladding

Publications (2)

Publication Number Publication Date
DE69301821D1 true DE69301821D1 (de) 1996-04-18
DE69301821T2 DE69301821T2 (de) 1996-09-05

Family

ID=25391206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69301821T Expired - Fee Related DE69301821T2 (de) 1992-05-22 1993-05-14 Ii-vi laserdiode mit einzelnem quantum well ohne mantelschichten

Country Status (10)

Country Link
US (1) US5319219A (de)
EP (1) EP0641494B1 (de)
JP (1) JP3092719B2 (de)
KR (1) KR100274521B1 (de)
CN (1) CN1034454C (de)
AU (1) AU4378993A (de)
DE (1) DE69301821T2 (de)
HK (1) HK1008125A1 (de)
RU (1) RU94046120A (de)
WO (1) WO1993024980A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196261A (ja) * 1992-12-25 1994-07-15 Hitachi Maxell Ltd 薄膜型エレクトロルミネツセンス素子
KR970005168B1 (ko) * 1993-01-26 1997-04-12 엘지전자 주식회사 청색 반도체 레이저 다이오드
JPH0783138B2 (ja) * 1993-01-29 1995-09-06 日本電気株式会社 半導体発光素子
JPH0773140B2 (ja) * 1993-02-09 1995-08-02 日本電気株式会社 半導体レーザ
US5488233A (en) * 1993-03-11 1996-01-30 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with compound semiconductor layer
EP0619602A3 (de) * 1993-04-07 1995-01-25 Sony Corp Halbleitervorrichtung und Herstellungsverfahren.
JP3318391B2 (ja) * 1993-06-14 2002-08-26 ローム株式会社 半導体発光装置
US5537433A (en) * 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter
JPH07254756A (ja) * 1994-03-15 1995-10-03 Sony Corp 光デバイス
JPH0878785A (ja) * 1994-08-31 1996-03-22 Sharp Corp 半導体レーザ素子およびその製造方法
US5540786A (en) * 1995-03-21 1996-07-30 The Hong Kong University Of Science & Technology Light emitting material
US5879962A (en) * 1995-12-13 1999-03-09 Minnesota Mining And Manufacturing Company III-V/II-VI Semiconductor interface fabrication method
JP2806423B2 (ja) * 1996-03-08 1998-09-30 日本電気株式会社 面発光型半導体素子
US5834330A (en) * 1996-10-07 1998-11-10 Minnesota Mining And Manufacturing Company Selective etch method for II-VI semiconductors
US6090637A (en) 1997-02-13 2000-07-18 3M Innovative Properties Company Fabrication of II-VI semiconductor device with BeTe buffer layer
US5767534A (en) * 1997-02-24 1998-06-16 Minnesota Mining And Manufacturing Company Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device
US5963573A (en) * 1997-08-25 1999-10-05 3M Innovative Properties Company Light absorbing layer for II-VI semiconductor light emitting devices
JPH11135834A (ja) * 1997-10-27 1999-05-21 Matsushita Electric Ind Co Ltd 発光ダイオード装置及びその製造方法
JP3533995B2 (ja) * 1999-07-01 2004-06-07 住友電気工業株式会社 発光ダイオードおよびその製造方法
EP1590171B1 (de) * 2003-01-22 2011-06-08 The Board Of Trustees Of The University Of Arkansas Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür
CN102105554A (zh) * 2008-06-10 2011-06-22 阿肯色大学托管委员会 砷化铟纳米晶体及其制备方法
CN104269740B (zh) * 2014-09-23 2018-01-30 中国科学院半导体研究所 一种激光器及其制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
JPS59184583A (ja) * 1983-04-05 1984-10-19 Agency Of Ind Science & Technol 半導体レ−ザ
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
JPS61222189A (ja) * 1985-03-15 1986-10-02 Sharp Corp 半導体レ−ザ
JPS6295885A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd 半導体レ−ザ装置
JPS62209884A (ja) * 1986-03-10 1987-09-16 Mitsubishi Electric Corp 半導体レ−ザ
JPH01296687A (ja) * 1988-05-25 1989-11-30 Inkiyuubeetaa Japan:Kk 可視発光半導体レーザ装置
GB2223351A (en) * 1988-09-28 1990-04-04 Philips Electronic Associated A method of manufacturing a semiconductor device having waveguide structure
US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
US5068867A (en) * 1989-11-20 1991-11-26 Hughes Aircraft Company Coupled quantum well strained superlattice structure and optically bistable semiconductor laser incorporating the same
JP2687668B2 (ja) * 1990-04-17 1997-12-08 日本電気株式会社 高出力半導体レーザ素子及びその製造方法
US5172384A (en) * 1991-05-03 1992-12-15 Motorola, Inc. Low threshold current laser

Also Published As

Publication number Publication date
US5319219A (en) 1994-06-07
WO1993024980A1 (en) 1993-12-09
CN1034454C (zh) 1997-04-02
HK1008125A1 (en) 1999-04-30
EP0641494A1 (de) 1995-03-08
DE69301821T2 (de) 1996-09-05
EP0641494B1 (de) 1996-03-13
JP3092719B2 (ja) 2000-09-25
CN1081026A (zh) 1994-01-19
JPH07507423A (ja) 1995-08-10
AU4378993A (en) 1993-12-30
RU94046120A (ru) 1996-09-27
KR100274521B1 (ko) 2001-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee