DE69230552D1 - Lichtemittierende Halbleitervorrichtungen mit Quantenbegrenzung - Google Patents

Lichtemittierende Halbleitervorrichtungen mit Quantenbegrenzung

Info

Publication number
DE69230552D1
DE69230552D1 DE69230552T DE69230552T DE69230552D1 DE 69230552 D1 DE69230552 D1 DE 69230552D1 DE 69230552 T DE69230552 T DE 69230552T DE 69230552 T DE69230552 T DE 69230552T DE 69230552 D1 DE69230552 D1 DE 69230552D1
Authority
DE
Germany
Prior art keywords
light emitting
emitting devices
semiconductor quantum
quantum confinement
confinement light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69230552T
Other languages
English (en)
Other versions
DE69230552T2 (de
Inventor
Nicholas K Sheridon
David K Biegelsen
Noble M Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of DE69230552D1 publication Critical patent/DE69230552D1/de
Application granted granted Critical
Publication of DE69230552T2 publication Critical patent/DE69230552T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/34Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/346Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/962Quantum dots and lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
DE69230552T 1991-10-28 1992-10-26 Lichtemittierende Halbleitervorrichtungen mit Quantenbegrenzung Expired - Lifetime DE69230552T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78394591A 1991-10-28 1991-10-28

Publications (2)

Publication Number Publication Date
DE69230552D1 true DE69230552D1 (de) 2000-02-17
DE69230552T2 DE69230552T2 (de) 2000-08-10

Family

ID=25130900

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69230552T Expired - Lifetime DE69230552T2 (de) 1991-10-28 1992-10-26 Lichtemittierende Halbleitervorrichtungen mit Quantenbegrenzung

Country Status (4)

Country Link
US (1) US5607876A (de)
EP (1) EP0544408B1 (de)
JP (1) JP3243303B2 (de)
DE (1) DE69230552T2 (de)

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5689603A (en) * 1993-07-07 1997-11-18 Huth; Gerald C. Optically interactive nanostructure
US6734451B2 (en) 1993-11-02 2004-05-11 Matsushita Electric Industrial Co., Ltd. Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
EP0892445B1 (de) * 1993-11-02 2004-04-07 Matsushita Electric Industrial Co., Ltd. Halbleiterbauelement mit Aggregat von Mikro-Nadeln aus Halbleitermaterial
DE4409863C1 (de) * 1994-03-22 1995-05-04 Siemens Ag Verfahren zur Herstellung eines Einzelelektronen-Bauelementes
WO1996014206A1 (en) * 1994-11-08 1996-05-17 Spectra Science Corporation Semiconductor nanocrystal display materials and display apparatus employing same
DE19522351A1 (de) * 1995-06-20 1997-01-09 Max Planck Gesellschaft Verfahren zur Herstellung von Quantenstrukturen, insbesondere von Quantenpunkten und Tunnelbarrieren sowie Bauelemente mit solchen Quantenstrukturen
US5703394A (en) * 1996-06-10 1997-12-30 Motorola Integrated electro-optical package
US5920078A (en) * 1996-06-20 1999-07-06 Frey; Jeffrey Optoelectronic device using indirect-bandgap semiconductor material
US5976957A (en) * 1996-10-28 1999-11-02 Sony Corporation Method of making silicon quantum wires on a substrate
JP3535527B2 (ja) * 1997-06-24 2004-06-07 マサチューセッツ インスティテュート オブ テクノロジー 傾斜GeSi層と平坦化を用いたゲルマニウム・オン・シリコンの貫通転位の制御
US6340826B1 (en) * 1998-03-30 2002-01-22 Agisilaos Iliadis Infra-red light emitting Si-MOSFET
US7227176B2 (en) * 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
FR2789496B1 (fr) * 1999-02-10 2002-06-07 Commissariat Energie Atomique Dispositif emetteur et guide de lumiere, avec une region active de silicium contenant des centres radiatifs, et procede de fabrication d'un tel dispositif
DE19933564C1 (de) * 1999-07-16 2001-01-25 Infineon Technologies Ag Verfahren zur Herstellung eines Vertikal-Halbleitertransistorbauelements und Vertikal-Halbleitertransistorbauelement
US6465782B1 (en) * 1999-09-10 2002-10-15 Starmega Corporation Strongly textured atomic ridges and tip arrays
US7019333B1 (en) 1999-11-16 2006-03-28 Kabushiki Kaisha Toshiba Photon source
GB2367690B (en) * 1999-11-23 2003-11-12 Toshiba Res Europ Ltd A photon source
EP1256135A1 (de) 2000-02-15 2002-11-13 Osram Opto Semiconductors GmbH Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung
DE10006738C2 (de) 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
US6836494B1 (en) * 2000-05-31 2004-12-28 Lucent Technologies Inc. Structure and method for processing optical energy
EP1309989B1 (de) * 2000-08-16 2007-01-10 Massachusetts Institute Of Technology Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen
EP1314189B1 (de) * 2000-08-22 2013-02-27 President and Fellows of Harvard College Elektrische vorrichtung enthaltend dotierten halbleitenden nanodrähten und verfahren zu ihre herstellung
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
US6448582B1 (en) * 2000-09-21 2002-09-10 Yale University High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region
KR20080005303A (ko) * 2000-12-11 2008-01-10 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
DE10104561A1 (de) * 2001-02-01 2002-08-22 Infineon Technologies Ag Quantenpunkt-Struktur, Bauelement mit optoelektronischer Wechselwirkung und Verfahren zum Herstellen einer Quantenpunkt-Struktur
KR100411613B1 (ko) * 2001-02-26 2003-12-18 한국표준과학연구원 광전자 소자용 실리콘 박막 구조체 및 그 제조방법
US6522063B2 (en) * 2001-03-28 2003-02-18 Epitech Corporation Light emitting diode
CA2442985C (en) 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US6940089B2 (en) * 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
KR100828351B1 (ko) * 2001-04-17 2008-05-08 삼성전자주식회사 발광 소자 및 이를 적용한 디스플레이 장치
JP2004535066A (ja) * 2001-05-18 2004-11-18 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ ナノスケールワイヤ及び関連デバイス
GB2380605B (en) * 2001-10-02 2004-01-14 Toshiba Res Europ Ltd A photon source and method of its fabrication and operation
NO315511B1 (no) * 2001-12-05 2003-09-15 Kjetil Naesje Fremgangsmåte og anordning for å hindre utilsiktet utströmning av et fluidfra en drikkebeholder
KR100940530B1 (ko) * 2003-01-17 2010-02-10 삼성전자주식회사 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
KR100446622B1 (ko) * 2002-01-10 2004-09-04 삼성전자주식회사 실리콘 광소자 및 이를 적용한 발광 디바이스 장치
KR100459898B1 (ko) * 2002-03-07 2004-12-04 삼성전자주식회사 실리콘 발광소자 및 이를 채용한 디스플레이 장치
KR100455288B1 (ko) * 2002-03-08 2004-11-06 삼성전자주식회사 실리콘 발광소자를 이용한 평판형 표시장치
TWI220319B (en) * 2002-03-11 2004-08-11 Solidlite Corp Nano-wire light emitting device
US7060632B2 (en) * 2002-03-14 2006-06-13 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US7192533B2 (en) 2002-03-28 2007-03-20 Koninklijke Philips Electronics N.V. Method of manufacturing nanowires and electronic device
TW529188B (en) * 2002-04-26 2003-04-21 Univ Nat Taiwan Metal oxide silicon structure with increased illumination efficiency by using nanometer structure
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7335545B2 (en) * 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
AU2003261205A1 (en) 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
US7229498B2 (en) * 2002-10-29 2007-06-12 Midwest Research Institute Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
KR20050086693A (ko) * 2002-11-18 2005-08-30 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 물질로부터 나노와이어를 제조하는 방법과나노와이어 분산 및 전자 장치
WO2005024960A1 (en) * 2003-09-08 2005-03-17 Group Iv Semiconductor Inc. Solid state white light emitter and display using same
US9085729B2 (en) * 2004-02-09 2015-07-21 Lg Display Co., Ltd. Blue emitters for use in organic electroluminescence devices
US20090227107A9 (en) * 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
US20050208769A1 (en) * 2004-03-19 2005-09-22 Manish Sharma Semiconductor structure
EP1774575A2 (de) * 2004-05-17 2007-04-18 Cambrios Technology Corp. Biofabrikation von transistoren mit feldeffekttransistoren
US7112455B2 (en) 2004-06-10 2006-09-26 Freescale Semiconductor, Inc Semiconductor optical devices and method for forming
US20070264623A1 (en) * 2004-06-15 2007-11-15 President And Fellows Of Harvard College Nanosensors
WO2006000790A1 (en) 2004-06-25 2006-01-05 Btg International Limited Formation of nanowhiskers on a substrate of dissimilar material
KR100612875B1 (ko) * 2004-11-24 2006-08-14 삼성전자주식회사 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
KR20060059327A (ko) * 2004-11-27 2006-06-01 삼성전자주식회사 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
US7393733B2 (en) * 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
EP1831973A2 (de) * 2004-12-06 2007-09-12 The President and Fellows of Harvard College Nanoskalige drahtgebundene datenspeicherung
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) * 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
KR100734881B1 (ko) * 2005-12-08 2007-07-03 한국전자통신연구원 측면 반사경을 이용한 실리콘 발광소자
KR100779078B1 (ko) * 2005-12-09 2007-11-27 한국전자통신연구원 빛의 방출 효율을 향상시킬 수 있는 실리콘 발광 소자 및그 제조방법
EP1804350A1 (de) * 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Halbleiterlaser mit langgestreckten Nanostrukturen
WO2007092606A2 (en) * 2006-02-09 2007-08-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
US7826336B2 (en) 2006-02-23 2010-11-02 Qunano Ab Data storage nanostructures
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
DE102006013670A1 (de) * 2006-03-24 2007-09-27 X-Fab Semiconductor Foundries Ag Breitbandig entspiegelte optische Bauteile mit gekrümmten Oberflächen
CA2655340C (en) * 2006-06-12 2016-10-25 President And Fellows Of Harvard College Nanosensors and related technologies
US7569984B2 (en) * 2006-06-19 2009-08-04 Atomic Energy Council-Institute Of Nuclear Energy Research White-light fluorescent lamp having luminescence layer with silicon quantum dots
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
JP2010508620A (ja) * 2006-09-12 2010-03-18 キユーデイー・ビジヨン・インコーポレーテツド 所定のパターンを表示するために有用なエレクトロルミネセントディスプレイ
WO2008060455A2 (en) 2006-11-09 2008-05-22 Nanosys, Inc. Methods for nanowire alignment and deposition
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063658A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063657A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Light emitting devices and displays with improved performance
EP2095100B1 (de) 2006-11-22 2016-09-21 President and Fellows of Harvard College Verfahren zum Betreiben eines Nanodraht-Feldeffekttransistorsensors
US8183587B2 (en) 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
US8049203B2 (en) 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
US8227817B2 (en) 2006-12-22 2012-07-24 Qunano Ab Elevated LED
EP2095426A4 (de) * 2006-12-22 2012-10-10 Qunano Ab Nanoelektrische struktur und herstellungsverfahren dafür
CN101669219B (zh) * 2006-12-22 2011-10-05 昆南诺股份有限公司 带有直立式纳米线结构的led及其制作方法
US7544591B2 (en) * 2007-01-18 2009-06-09 Hewlett-Packard Development Company, L.P. Method of creating isolated electrodes in a nanowire-based device
US7892610B2 (en) * 2007-05-07 2011-02-22 Nanosys, Inc. Method and system for printing aligned nanowires and other electrical devices
US8273591B2 (en) * 2008-03-25 2012-09-25 International Business Machines Corporation Super lattice/quantum well nanowires
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
KR101995369B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
US20110182850A1 (en) 2009-04-10 2011-07-28 Trixi Brandl Organic compounds and their uses
US20120135158A1 (en) 2009-05-26 2012-05-31 Sharp Kabushiki Kaisha Methods and systems for electric field deposition of nanowires and other devices
WO2011038228A1 (en) 2009-09-24 2011-03-31 President And Fellows Of Harvard College Bent nanowires and related probing of species
US7951638B1 (en) * 2010-01-07 2011-05-31 Atomic Energy Council-Institute of Nuclear Research Method for making a textured surface on a solar cell
WO2014124486A1 (en) * 2013-02-13 2014-08-21 Meaglow Ltd Light emitting device using super-luminescence in semiconductor layer grown with moss-burstein effect
CA2889103A1 (fr) * 2015-04-21 2016-10-21 Claudine Allen Materiaux nanocomposites hybrides et leur application dans un systeme de projection volumetrique
JP2017092076A (ja) * 2015-11-02 2017-05-25 株式会社ソディック 発光素子
KR101642248B1 (ko) * 2016-03-03 2016-07-22 (주)아모레퍼시픽 피부 미용기기

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4211586A (en) * 1977-09-21 1980-07-08 International Business Machines Corporation Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers
US4862231A (en) * 1983-11-18 1989-08-29 Harris Corporation Non-contact I/O signal transmission in integrated circuit packaging
DE3574082D1 (en) * 1984-07-02 1989-12-07 Texas Instruments Inc Quantum-coupled device
FR2598862B1 (fr) * 1986-05-16 1994-04-08 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.
US4875086A (en) * 1987-05-22 1989-10-17 Texas Instruments Incorporated Silicon-on-insulator integrated circuits and method
US4999682A (en) * 1987-08-14 1991-03-12 Regents Of The University Of Minnesota Electronic and optoelectronic laser devices utilizing light hole properties
US5045894A (en) * 1988-06-29 1991-09-03 Hitachi, Ltd. Compound semiconductor light emitting device
US4910165A (en) * 1988-11-04 1990-03-20 Ncr Corporation Method for forming epitaxial silicon on insulator structures using oxidized porous silicon
US5033053A (en) * 1989-03-30 1991-07-16 Canon Kabushiki Kaisha Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same
JP2575901B2 (ja) * 1989-11-13 1997-01-29 新技術事業団 グリッド入り量子構造
DE4126955C2 (de) * 1991-08-14 1994-05-05 Fraunhofer Ges Forschung Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen

Also Published As

Publication number Publication date
JP3243303B2 (ja) 2002-01-07
US5607876A (en) 1997-03-04
JPH05218499A (ja) 1993-08-27
EP0544408B1 (de) 2000-01-12
EP0544408A3 (en) 1993-10-27
EP0544408A2 (de) 1993-06-02
DE69230552T2 (de) 2000-08-10

Similar Documents

Publication Publication Date Title
DE69230552T2 (de) Lichtemittierende Halbleitervorrichtungen mit Quantenbegrenzung
DE68913877D1 (de) Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand.
DE69127677D1 (de) Lichtemittierende Halbleiterdioden
DE69331554T2 (de) Lichtemittierende Diode
DE69408374T2 (de) Lichtemittierende Halbleitervorrichtung
DE69325045T2 (de) Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung
GB2270199B (en) Semiconductor light emitting element
DE69232411D1 (de) Lichtemittierende Diode mit baumartiger Oberflächenelektrode
DE69533276D1 (de) Lichtemittierende Halbleitervorrichtungen
DE69314816T2 (de) Lichtemittierende Halbleitervorrichtung
DE69118066D1 (de) Oberflächenemittierender Halbleiterlaser
DE69126152D1 (de) Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung
DE69217344D1 (de) Abstimmbarer Laser mit gekoppelter Quantumwell-Struktur
DE69308045D1 (de) Lichtemittierende Halbleitervorrichtung
DE69117488D1 (de) Halbleiterlaser mit verteilter rückkoppelung
DE69223707T2 (de) Halbleiter-Elektronenemittierende Einrichtung
DE69101157D1 (de) Lichtaussendes Halbleiterelement.
DE69222822T2 (de) Optoelektronische Schaltvorrichtung mit Quantentopf-Struktur und stimulierter Emission
DE69205399D1 (de) Spannungsverformte Quantumwell-Laserdiode.
DE69405294D1 (de) Licht emittierende Halbleitervorrichtung aus AlGaInP
DE69205716D1 (de) Quanten-Faden-Laser.
DE69215747D1 (de) Halbleiterlaserdiode
DE69420202T2 (de) Lichtemittierende Halbleitervorrichtung
DE69207069D1 (de) Lichtemittierende Halbleitervorrichtung
DE59400463D1 (de) Lichtemittierendes Halbleiterbauelement

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R071 Expiry of right

Ref document number: 544408

Country of ref document: EP