US5689603A
(en)
*
|
1993-07-07 |
1997-11-18 |
Huth; Gerald C. |
Optically interactive nanostructure
|
US6734451B2
(en)
|
1993-11-02 |
2004-05-11 |
Matsushita Electric Industrial Co., Ltd. |
Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
|
EP0892445B1
(de)
*
|
1993-11-02 |
2004-04-07 |
Matsushita Electric Industrial Co., Ltd. |
Halbleiterbauelement mit Aggregat von Mikro-Nadeln aus Halbleitermaterial
|
DE4409863C1
(de)
*
|
1994-03-22 |
1995-05-04 |
Siemens Ag |
Verfahren zur Herstellung eines Einzelelektronen-Bauelementes
|
WO1996014206A1
(en)
*
|
1994-11-08 |
1996-05-17 |
Spectra Science Corporation |
Semiconductor nanocrystal display materials and display apparatus employing same
|
DE19522351A1
(de)
*
|
1995-06-20 |
1997-01-09 |
Max Planck Gesellschaft |
Verfahren zur Herstellung von Quantenstrukturen, insbesondere von Quantenpunkten und Tunnelbarrieren sowie Bauelemente mit solchen Quantenstrukturen
|
US5703394A
(en)
*
|
1996-06-10 |
1997-12-30 |
Motorola |
Integrated electro-optical package
|
US5920078A
(en)
*
|
1996-06-20 |
1999-07-06 |
Frey; Jeffrey |
Optoelectronic device using indirect-bandgap semiconductor material
|
US5976957A
(en)
*
|
1996-10-28 |
1999-11-02 |
Sony Corporation |
Method of making silicon quantum wires on a substrate
|
JP3535527B2
(ja)
*
|
1997-06-24 |
2004-06-07 |
マサチューセッツ インスティテュート オブ テクノロジー |
傾斜GeSi層と平坦化を用いたゲルマニウム・オン・シリコンの貫通転位の制御
|
US6340826B1
(en)
*
|
1998-03-30 |
2002-01-22 |
Agisilaos Iliadis |
Infra-red light emitting Si-MOSFET
|
US7227176B2
(en)
*
|
1998-04-10 |
2007-06-05 |
Massachusetts Institute Of Technology |
Etch stop layer system
|
FR2789496B1
(fr)
*
|
1999-02-10 |
2002-06-07 |
Commissariat Energie Atomique |
Dispositif emetteur et guide de lumiere, avec une region active de silicium contenant des centres radiatifs, et procede de fabrication d'un tel dispositif
|
DE19933564C1
(de)
*
|
1999-07-16 |
2001-01-25 |
Infineon Technologies Ag |
Verfahren zur Herstellung eines Vertikal-Halbleitertransistorbauelements und Vertikal-Halbleitertransistorbauelement
|
US6465782B1
(en)
*
|
1999-09-10 |
2002-10-15 |
Starmega Corporation |
Strongly textured atomic ridges and tip arrays
|
US7019333B1
(en)
|
1999-11-16 |
2006-03-28 |
Kabushiki Kaisha Toshiba |
Photon source
|
GB2367690B
(en)
*
|
1999-11-23 |
2003-11-12 |
Toshiba Res Europ Ltd |
A photon source
|
EP1256135A1
(de)
|
2000-02-15 |
2002-11-13 |
Osram Opto Semiconductors GmbH |
Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung
|
DE10006738C2
(de)
|
2000-02-15 |
2002-01-17 |
Osram Opto Semiconductors Gmbh |
Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
|
US6836494B1
(en)
*
|
2000-05-31 |
2004-12-28 |
Lucent Technologies Inc. |
Structure and method for processing optical energy
|
EP1309989B1
(de)
*
|
2000-08-16 |
2007-01-10 |
Massachusetts Institute Of Technology |
Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen
|
EP1314189B1
(de)
*
|
2000-08-22 |
2013-02-27 |
President and Fellows of Harvard College |
Elektrische vorrichtung enthaltend dotierten halbleitenden nanodrähten und verfahren zu ihre herstellung
|
US7301199B2
(en)
*
|
2000-08-22 |
2007-11-27 |
President And Fellows Of Harvard College |
Nanoscale wires and related devices
|
US20060175601A1
(en)
*
|
2000-08-22 |
2006-08-10 |
President And Fellows Of Harvard College |
Nanoscale wires and related devices
|
US6448582B1
(en)
*
|
2000-09-21 |
2002-09-10 |
Yale University |
High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region
|
KR20080005303A
(ko)
*
|
2000-12-11 |
2008-01-10 |
프레지던트 앤드 펠로우즈 오브 하버드 칼리지 |
나노센서
|
DE10104561A1
(de)
*
|
2001-02-01 |
2002-08-22 |
Infineon Technologies Ag |
Quantenpunkt-Struktur, Bauelement mit optoelektronischer Wechselwirkung und Verfahren zum Herstellen einer Quantenpunkt-Struktur
|
KR100411613B1
(ko)
*
|
2001-02-26 |
2003-12-18 |
한국표준과학연구원 |
광전자 소자용 실리콘 박막 구조체 및 그 제조방법
|
US6522063B2
(en)
*
|
2001-03-28 |
2003-02-18 |
Epitech Corporation |
Light emitting diode
|
CA2442985C
(en)
|
2001-03-30 |
2016-05-31 |
The Regents Of The University Of California |
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
|
US6940089B2
(en)
*
|
2001-04-04 |
2005-09-06 |
Massachusetts Institute Of Technology |
Semiconductor device structure
|
KR100828351B1
(ko)
*
|
2001-04-17 |
2008-05-08 |
삼성전자주식회사 |
발광 소자 및 이를 적용한 디스플레이 장치
|
JP2004535066A
(ja)
*
|
2001-05-18 |
2004-11-18 |
プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ |
ナノスケールワイヤ及び関連デバイス
|
GB2380605B
(en)
*
|
2001-10-02 |
2004-01-14 |
Toshiba Res Europ Ltd |
A photon source and method of its fabrication and operation
|
NO315511B1
(no)
*
|
2001-12-05 |
2003-09-15 |
Kjetil Naesje |
Fremgangsmåte og anordning for å hindre utilsiktet utströmning av et fluidfra en drikkebeholder
|
KR100940530B1
(ko)
*
|
2003-01-17 |
2010-02-10 |
삼성전자주식회사 |
실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
|
KR100446622B1
(ko)
*
|
2002-01-10 |
2004-09-04 |
삼성전자주식회사 |
실리콘 광소자 및 이를 적용한 발광 디바이스 장치
|
KR100459898B1
(ko)
*
|
2002-03-07 |
2004-12-04 |
삼성전자주식회사 |
실리콘 발광소자 및 이를 채용한 디스플레이 장치
|
KR100455288B1
(ko)
*
|
2002-03-08 |
2004-11-06 |
삼성전자주식회사 |
실리콘 발광소자를 이용한 평판형 표시장치
|
TWI220319B
(en)
*
|
2002-03-11 |
2004-08-11 |
Solidlite Corp |
Nano-wire light emitting device
|
US7060632B2
(en)
*
|
2002-03-14 |
2006-06-13 |
Amberwave Systems Corporation |
Methods for fabricating strained layers on semiconductor substrates
|
US7192533B2
(en)
|
2002-03-28 |
2007-03-20 |
Koninklijke Philips Electronics N.V. |
Method of manufacturing nanowires and electronic device
|
TW529188B
(en)
*
|
2002-04-26 |
2003-04-21 |
Univ Nat Taiwan |
Metal oxide silicon structure with increased illumination efficiency by using nanometer structure
|
US6995430B2
(en)
|
2002-06-07 |
2006-02-07 |
Amberwave Systems Corporation |
Strained-semiconductor-on-insulator device structures
|
US7335545B2
(en)
*
|
2002-06-07 |
2008-02-26 |
Amberwave Systems Corporation |
Control of strain in device layers by prevention of relaxation
|
US20030227057A1
(en)
*
|
2002-06-07 |
2003-12-11 |
Lochtefeld Anthony J. |
Strained-semiconductor-on-insulator device structures
|
US7074623B2
(en)
*
|
2002-06-07 |
2006-07-11 |
Amberwave Systems Corporation |
Methods of forming strained-semiconductor-on-insulator finFET device structures
|
US7307273B2
(en)
*
|
2002-06-07 |
2007-12-11 |
Amberwave Systems Corporation |
Control of strain in device layers by selective relaxation
|
AU2003261205A1
(en)
|
2002-07-19 |
2004-02-09 |
President And Fellows Of Harvard College |
Nanoscale coherent optical components
|
US7229498B2
(en)
*
|
2002-10-29 |
2007-06-12 |
Midwest Research Institute |
Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
|
KR20050086693A
(ko)
*
|
2002-11-18 |
2005-08-30 |
코닌클리즈케 필립스 일렉트로닉스 엔.브이. |
반도체 물질로부터 나노와이어를 제조하는 방법과나노와이어 분산 및 전자 장치
|
WO2005024960A1
(en)
*
|
2003-09-08 |
2005-03-17 |
Group Iv Semiconductor Inc. |
Solid state white light emitter and display using same
|
US9085729B2
(en)
*
|
2004-02-09 |
2015-07-21 |
Lg Display Co., Ltd. |
Blue emitters for use in organic electroluminescence devices
|
US20090227107A9
(en)
*
|
2004-02-13 |
2009-09-10 |
President And Fellows Of Havard College |
Nanostructures Containing Metal Semiconductor Compounds
|
US20050208769A1
(en)
*
|
2004-03-19 |
2005-09-22 |
Manish Sharma |
Semiconductor structure
|
EP1774575A2
(de)
*
|
2004-05-17 |
2007-04-18 |
Cambrios Technology Corp. |
Biofabrikation von transistoren mit feldeffekttransistoren
|
US7112455B2
(en)
|
2004-06-10 |
2006-09-26 |
Freescale Semiconductor, Inc |
Semiconductor optical devices and method for forming
|
US20070264623A1
(en)
*
|
2004-06-15 |
2007-11-15 |
President And Fellows Of Harvard College |
Nanosensors
|
WO2006000790A1
(en)
|
2004-06-25 |
2006-01-05 |
Btg International Limited |
Formation of nanowhiskers on a substrate of dissimilar material
|
KR100612875B1
(ko)
*
|
2004-11-24 |
2006-08-14 |
삼성전자주식회사 |
실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
|
KR20060059327A
(ko)
*
|
2004-11-27 |
2006-06-01 |
삼성전자주식회사 |
실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
|
US20060113603A1
(en)
*
|
2004-12-01 |
2006-06-01 |
Amberwave Systems Corporation |
Hybrid semiconductor-on-insulator structures and related methods
|
US7393733B2
(en)
*
|
2004-12-01 |
2008-07-01 |
Amberwave Systems Corporation |
Methods of forming hybrid fin field-effect transistor structures
|
EP1831973A2
(de)
*
|
2004-12-06 |
2007-09-12 |
The President and Fellows of Harvard College |
Nanoskalige drahtgebundene datenspeicherung
|
US20100227382A1
(en)
|
2005-05-25 |
2010-09-09 |
President And Fellows Of Harvard College |
Nanoscale sensors
|
WO2006132659A2
(en)
*
|
2005-06-06 |
2006-12-14 |
President And Fellows Of Harvard College |
Nanowire heterostructures
|
KR100734881B1
(ko)
*
|
2005-12-08 |
2007-07-03 |
한국전자통신연구원 |
측면 반사경을 이용한 실리콘 발광소자
|
KR100779078B1
(ko)
*
|
2005-12-09 |
2007-11-27 |
한국전자통신연구원 |
빛의 방출 효율을 향상시킬 수 있는 실리콘 발광 소자 및그 제조방법
|
EP1804350A1
(de)
*
|
2005-12-27 |
2007-07-04 |
Interuniversitair Microelektronica Centrum |
Halbleiterlaser mit langgestreckten Nanostrukturen
|
WO2007092606A2
(en)
*
|
2006-02-09 |
2007-08-16 |
Qd Vision, Inc. |
Displays including semiconductor nanocrystals and methods of making same
|
US7826336B2
(en)
|
2006-02-23 |
2010-11-02 |
Qunano Ab |
Data storage nanostructures
|
WO2007143197A2
(en)
|
2006-06-02 |
2007-12-13 |
Qd Vision, Inc. |
Light-emitting devices and displays with improved performance
|
DE102006013670A1
(de)
*
|
2006-03-24 |
2007-09-27 |
X-Fab Semiconductor Foundries Ag |
Breitbandig entspiegelte optische Bauteile mit gekrümmten Oberflächen
|
CA2655340C
(en)
*
|
2006-06-12 |
2016-10-25 |
President And Fellows Of Harvard College |
Nanosensors and related technologies
|
US7569984B2
(en)
*
|
2006-06-19 |
2009-08-04 |
Atomic Energy Council-Institute Of Nuclear Energy Research |
White-light fluorescent lamp having luminescence layer with silicon quantum dots
|
WO2008033303A2
(en)
|
2006-09-11 |
2008-03-20 |
President And Fellows Of Harvard College |
Branched nanoscale wires
|
JP2010508620A
(ja)
*
|
2006-09-12 |
2010-03-18 |
キユーデイー・ビジヨン・インコーポレーテツド |
所定のパターンを表示するために有用なエレクトロルミネセントディスプレイ
|
WO2008060455A2
(en)
|
2006-11-09 |
2008-05-22 |
Nanosys, Inc. |
Methods for nanowire alignment and deposition
|
WO2008063652A1
(en)
|
2006-11-21 |
2008-05-29 |
Qd Vision, Inc. |
Blue emitting semiconductor nanocrystals and compositions and devices including same
|
WO2008063653A1
(en)
|
2006-11-21 |
2008-05-29 |
Qd Vision, Inc. |
Semiconductor nanocrystals and compositions and devices including same
|
WO2008063658A2
(en)
*
|
2006-11-21 |
2008-05-29 |
Qd Vision, Inc. |
Semiconductor nanocrystals and compositions and devices including same
|
WO2008063657A2
(en)
*
|
2006-11-21 |
2008-05-29 |
Qd Vision, Inc. |
Light emitting devices and displays with improved performance
|
EP2095100B1
(de)
|
2006-11-22 |
2016-09-21 |
President and Fellows of Harvard College |
Verfahren zum Betreiben eines Nanodraht-Feldeffekttransistorsensors
|
US8183587B2
(en)
|
2006-12-22 |
2012-05-22 |
Qunano Ab |
LED with upstanding nanowire structure and method of producing such
|
US8049203B2
(en)
|
2006-12-22 |
2011-11-01 |
Qunano Ab |
Nanoelectronic structure and method of producing such
|
US8227817B2
(en)
|
2006-12-22 |
2012-07-24 |
Qunano Ab |
Elevated LED
|
EP2095426A4
(de)
*
|
2006-12-22 |
2012-10-10 |
Qunano Ab |
Nanoelektrische struktur und herstellungsverfahren dafür
|
CN101669219B
(zh)
*
|
2006-12-22 |
2011-10-05 |
昆南诺股份有限公司 |
带有直立式纳米线结构的led及其制作方法
|
US7544591B2
(en)
*
|
2007-01-18 |
2009-06-09 |
Hewlett-Packard Development Company, L.P. |
Method of creating isolated electrodes in a nanowire-based device
|
US7892610B2
(en)
*
|
2007-05-07 |
2011-02-22 |
Nanosys, Inc. |
Method and system for printing aligned nanowires and other electrical devices
|
US8273591B2
(en)
*
|
2008-03-25 |
2012-09-25 |
International Business Machines Corporation |
Super lattice/quantum well nanowires
|
US9525148B2
(en)
|
2008-04-03 |
2016-12-20 |
Qd Vision, Inc. |
Device including quantum dots
|
KR101995369B1
(ko)
|
2008-04-03 |
2019-07-02 |
삼성 리서치 아메리카 인코포레이티드 |
양자점들을 포함하는 발광 소자
|
US20110182850A1
(en)
|
2009-04-10 |
2011-07-28 |
Trixi Brandl |
Organic compounds and their uses
|
US20120135158A1
(en)
|
2009-05-26 |
2012-05-31 |
Sharp Kabushiki Kaisha |
Methods and systems for electric field deposition of nanowires and other devices
|
WO2011038228A1
(en)
|
2009-09-24 |
2011-03-31 |
President And Fellows Of Harvard College |
Bent nanowires and related probing of species
|
US7951638B1
(en)
*
|
2010-01-07 |
2011-05-31 |
Atomic Energy Council-Institute of Nuclear Research |
Method for making a textured surface on a solar cell
|
WO2014124486A1
(en)
*
|
2013-02-13 |
2014-08-21 |
Meaglow Ltd |
Light emitting device using super-luminescence in semiconductor layer grown with moss-burstein effect
|
CA2889103A1
(fr)
*
|
2015-04-21 |
2016-10-21 |
Claudine Allen |
Materiaux nanocomposites hybrides et leur application dans un systeme de projection volumetrique
|
JP2017092076A
(ja)
*
|
2015-11-02 |
2017-05-25 |
株式会社ソディック |
発光素子
|
KR101642248B1
(ko)
*
|
2016-03-03 |
2016-07-22 |
(주)아모레퍼시픽 |
피부 미용기기
|