DE68913877D1 - Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand. - Google Patents

Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand.

Info

Publication number
DE68913877D1
DE68913877D1 DE89202285T DE68913877T DE68913877D1 DE 68913877 D1 DE68913877 D1 DE 68913877D1 DE 89202285 T DE89202285 T DE 89202285T DE 68913877 T DE68913877 T DE 68913877T DE 68913877 D1 DE68913877 D1 DE 68913877D1
Authority
DE
Germany
Prior art keywords
light emitting
semiconductor light
emitting devices
wide bandgap
bandgap semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89202285T
Other languages
English (en)
Other versions
DE68913877T2 (de
Inventor
Sel Brian Colak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE68913877D1 publication Critical patent/DE68913877D1/de
Publication of DE68913877T2 publication Critical patent/DE68913877T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE68913877T 1988-09-15 1989-09-11 Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand. Expired - Fee Related DE68913877T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/244,379 US4894832A (en) 1988-09-15 1988-09-15 Wide band gap semiconductor light emitting devices

Publications (2)

Publication Number Publication Date
DE68913877D1 true DE68913877D1 (de) 1994-04-21
DE68913877T2 DE68913877T2 (de) 1994-09-22

Family

ID=22922491

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68913877T Expired - Fee Related DE68913877T2 (de) 1988-09-15 1989-09-11 Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand.

Country Status (5)

Country Link
US (1) US4894832A (de)
EP (1) EP0359329B1 (de)
JP (1) JPH0738487B2 (de)
KR (1) KR900005632A (de)
DE (1) DE68913877T2 (de)

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RU2019881C1 (ru) * 1991-12-26 1994-09-15 Физический институт им.П.Н.Лебедева РАН Электронно-лучевая трубка
RU2064206C1 (ru) * 1991-12-26 1996-07-20 Физический институт им.П.Н.Лебедева РАН Лазерный экран электронно-лучевой трубки и способ его изготовления
US5254502A (en) * 1992-03-27 1993-10-19 Principia Optics, Inc. Method for making a laser screen for a cathode-ray tube
KR100292308B1 (ko) * 1992-06-19 2001-09-17 이데이 노부유끼 반도체장치
US5339003A (en) * 1992-06-22 1994-08-16 Principia Optics, Inc. Laser screen for a cathode-ray tube
US6617235B2 (en) * 1995-03-30 2003-09-09 Sumitomo Chemical Company, Limited Method of manufacturing Group III-V compound semiconductor
EP0772249B1 (de) * 1995-11-06 2006-05-03 Nichia Corporation Halbleitervorrichtung aus einer Nitridverbindung
US5677923A (en) * 1996-01-11 1997-10-14 Mcdonnell Douglas Corporation Vertical cavity electron beam pumped semiconductor lasers and methods
US6396864B1 (en) * 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
DE19909978A1 (de) 1999-03-06 2000-09-07 Bayer Ag Die Verwendung von hydrophilen Polyester-Polyurethan-Schaumstoffen bei der Herstellung von Verbundstoffen für die Fahrzeuginnenausstattung
US7049761B2 (en) 2000-02-11 2006-05-23 Altair Engineering, Inc. Light tube and power supply circuit
KR20030073514A (ko) * 2002-03-12 2003-09-19 강석일 방수막을 가지는 먹장어 가죽 및 그 제조방법
US7644544B2 (en) * 2005-01-18 2010-01-12 Kea Jr Harry Edwin Compact security shelter device for motorcycles, bicycles, four-wheelers and other small personal transportation vehicles
US7966774B2 (en) * 2005-01-18 2011-06-28 Kea Jr Harry E Security shelter for small personal transportation vehicles
US8118447B2 (en) * 2007-12-20 2012-02-21 Altair Engineering, Inc. LED lighting apparatus with swivel connection
US7712918B2 (en) * 2007-12-21 2010-05-11 Altair Engineering , Inc. Light distribution using a light emitting diode assembly
US8360599B2 (en) 2008-05-23 2013-01-29 Ilumisys, Inc. Electric shock resistant L.E.D. based light
US7976196B2 (en) * 2008-07-09 2011-07-12 Altair Engineering, Inc. Method of forming LED-based light and resulting LED-based light
US7946729B2 (en) * 2008-07-31 2011-05-24 Altair Engineering, Inc. Fluorescent tube replacement having longitudinally oriented LEDs
US8674626B2 (en) 2008-09-02 2014-03-18 Ilumisys, Inc. LED lamp failure alerting system
US8256924B2 (en) 2008-09-15 2012-09-04 Ilumisys, Inc. LED-based light having rapidly oscillating LEDs
US8324817B2 (en) * 2008-10-24 2012-12-04 Ilumisys, Inc. Light and light sensor
US8901823B2 (en) 2008-10-24 2014-12-02 Ilumisys, Inc. Light and light sensor
US8214084B2 (en) 2008-10-24 2012-07-03 Ilumisys, Inc. Integration of LED lighting with building controls
US7938562B2 (en) * 2008-10-24 2011-05-10 Altair Engineering, Inc. Lighting including integral communication apparatus
US8653984B2 (en) 2008-10-24 2014-02-18 Ilumisys, Inc. Integration of LED lighting control with emergency notification systems
US8444292B2 (en) * 2008-10-24 2013-05-21 Ilumisys, Inc. End cap substitute for LED-based tube replacement light
US8556452B2 (en) 2009-01-15 2013-10-15 Ilumisys, Inc. LED lens
US8362710B2 (en) * 2009-01-21 2013-01-29 Ilumisys, Inc. Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays
US8664880B2 (en) * 2009-01-21 2014-03-04 Ilumisys, Inc. Ballast/line detection circuit for fluorescent replacement lamps
US8330381B2 (en) 2009-05-14 2012-12-11 Ilumisys, Inc. Electronic circuit for DC conversion of fluorescent lighting ballast
US8299695B2 (en) 2009-06-02 2012-10-30 Ilumisys, Inc. Screw-in LED bulb comprising a base having outwardly projecting nodes
EP2446715A4 (de) * 2009-06-23 2013-09-11 Ilumisys Inc Beleuchtungsvorrichtung mit leds und schaltstromsteuerungssystem
WO2011119921A2 (en) 2010-03-26 2011-09-29 Altair Engineering, Inc. Led light with thermoelectric generator
WO2011119958A1 (en) 2010-03-26 2011-09-29 Altair Engineering, Inc. Inside-out led bulb
US9057493B2 (en) 2010-03-26 2015-06-16 Ilumisys, Inc. LED light tube with dual sided light distribution
US8454193B2 (en) 2010-07-08 2013-06-04 Ilumisys, Inc. Independent modules for LED fluorescent light tube replacement
WO2012009260A2 (en) 2010-07-12 2012-01-19 Altair Engineering, Inc. Circuit board mount for led light tube
WO2012058556A2 (en) 2010-10-29 2012-05-03 Altair Engineering, Inc. Mechanisms for reducing risk of shock during installation of light tube
US8870415B2 (en) 2010-12-09 2014-10-28 Ilumisys, Inc. LED fluorescent tube replacement light with reduced shock hazard
US9072171B2 (en) 2011-08-24 2015-06-30 Ilumisys, Inc. Circuit board mount for LED light
WO2013131002A1 (en) 2012-03-02 2013-09-06 Ilumisys, Inc. Electrical connector header for an led-based light
WO2014008463A1 (en) 2012-07-06 2014-01-09 Ilumisys, Inc. Power supply assembly for led-based light tube
US9271367B2 (en) 2012-07-09 2016-02-23 Ilumisys, Inc. System and method for controlling operation of an LED-based light
US9285084B2 (en) 2013-03-14 2016-03-15 Ilumisys, Inc. Diffusers for LED-based lights
US9267650B2 (en) 2013-10-09 2016-02-23 Ilumisys, Inc. Lens for an LED-based light
EP3097748A1 (de) 2014-01-22 2016-11-30 iLumisys, Inc. Beleuchtung auf led-basis mit adressierten leds
US9510400B2 (en) 2014-05-13 2016-11-29 Ilumisys, Inc. User input systems for an LED-based light
US10161568B2 (en) 2015-06-01 2018-12-25 Ilumisys, Inc. LED-based light with canted outer walls
CN109301045B (zh) * 2018-10-19 2020-07-31 京东方科技集团股份有限公司 一种发光器件及其制备方法、显示装置

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US4577321A (en) * 1983-09-19 1986-03-18 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
DE3586582T2 (de) * 1984-12-04 1993-04-01 Philips Nv Durch elektronen gepumpter halbleiterlaser und vorrichtung.
NL8701497A (nl) * 1987-06-26 1989-01-16 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.

Also Published As

Publication number Publication date
DE68913877T2 (de) 1994-09-22
EP0359329A2 (de) 1990-03-21
JPH02114591A (ja) 1990-04-26
EP0359329B1 (de) 1994-03-16
US4894832A (en) 1990-01-16
EP0359329A3 (de) 1991-04-03
KR900005632A (ko) 1990-04-14
JPH0738487B2 (ja) 1995-04-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee