DE69002846D1 - Lichtemittierende Diamantanordnung. - Google Patents

Lichtemittierende Diamantanordnung.

Info

Publication number
DE69002846D1
DE69002846D1 DE90106184T DE69002846T DE69002846D1 DE 69002846 D1 DE69002846 D1 DE 69002846D1 DE 90106184 T DE90106184 T DE 90106184T DE 69002846 T DE69002846 T DE 69002846T DE 69002846 D1 DE69002846 D1 DE 69002846D1
Authority
DE
Germany
Prior art keywords
light emitting
emitting device
diamond light
diamond
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90106184T
Other languages
English (en)
Other versions
DE69002846T2 (de
Inventor
Naoji Fujimori
Yoshiki Nishibayashi
Hiromu Shiomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69002846D1 publication Critical patent/DE69002846D1/de
Publication of DE69002846T2 publication Critical patent/DE69002846T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1990602846 1989-03-30 1990-03-30 Lichtemittierende Diamantanordnung. Expired - Fee Related DE69002846T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1080980A JPH02260470A (ja) 1989-03-30 1989-03-30 発光素子

Publications (2)

Publication Number Publication Date
DE69002846D1 true DE69002846D1 (de) 1993-09-30
DE69002846T2 DE69002846T2 (de) 1993-12-23

Family

ID=13733655

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990602846 Expired - Fee Related DE69002846T2 (de) 1989-03-30 1990-03-30 Lichtemittierende Diamantanordnung.

Country Status (3)

Country Link
EP (1) EP0390209B1 (de)
JP (1) JPH02260470A (de)
DE (1) DE69002846T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2961812B2 (ja) * 1990-05-17 1999-10-12 住友電気工業株式会社 半導体装置
GB9025837D0 (en) * 1990-11-28 1991-01-09 De Beers Ind Diamond Light emitting diamond device
DE4322830A1 (de) * 1993-07-08 1995-01-19 Bernd Burchard Diodenstruktur aus Diamant
JP3304541B2 (ja) * 1993-09-08 2002-07-22 住友電気工業株式会社 オーミック電極の形成方法
JP3309887B2 (ja) * 1994-08-17 2002-07-29 住友電気工業株式会社 半導体装置
US8591856B2 (en) 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
US6582513B1 (en) 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6872981B1 (en) 1999-07-07 2005-03-29 Tokyo Gas Co., Ltd. Diamond ultraviolet luminescent element
WO2001004965A1 (fr) * 1999-07-09 2001-01-18 Tokyo Gas Co., Ltd. Dispositif emetteur de rayons ultraviolets a diamant
US9023306B2 (en) * 2008-05-05 2015-05-05 Carnegie Institution Of Washington Ultratough single crystal boron-doped diamond
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
RU2555018C2 (ru) 2010-12-23 2015-07-10 Элемент Сикс Лимитед Контролируемое легирование синтетического алмазного материала
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
WO2019127423A1 (zh) * 2017-12-29 2019-07-04 深圳前海小有技术有限公司 具有复合金刚石衬底的led芯片及其制备方法
DE102021123907A1 (de) 2021-09-15 2023-03-16 Universität Siegen, Körperschaft des öffentlichen Rechts LED und Herstellungsverfahren dafür

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2671259B2 (ja) * 1988-03-28 1997-10-29 住友電気工業株式会社 ショットキー接合半導体装置

Also Published As

Publication number Publication date
EP0390209B1 (de) 1993-08-25
JPH02260470A (ja) 1990-10-23
EP0390209A2 (de) 1990-10-03
DE69002846T2 (de) 1993-12-23
EP0390209A3 (de) 1991-01-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee