DE68910906T2 - Leuchtende Vorrichtung. - Google Patents

Leuchtende Vorrichtung.

Info

Publication number
DE68910906T2
DE68910906T2 DE89308891T DE68910906T DE68910906T2 DE 68910906 T2 DE68910906 T2 DE 68910906T2 DE 89308891 T DE89308891 T DE 89308891T DE 68910906 T DE68910906 T DE 68910906T DE 68910906 T2 DE68910906 T2 DE 68910906T2
Authority
DE
Germany
Prior art keywords
luminous device
luminous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89308891T
Other languages
English (en)
Other versions
DE68910906D1 (de
Inventor
Masahiko Kitagawa
Yoshitaka Tomomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE68910906D1 publication Critical patent/DE68910906D1/de
Publication of DE68910906T2 publication Critical patent/DE68910906T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0037—Devices characterised by their operation having a MIS barrier layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE89308891T 1988-09-02 1989-09-01 Leuchtende Vorrichtung. Expired - Fee Related DE68910906T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63221081A JPH0268968A (ja) 1988-09-02 1988-09-02 化合物半導体発光素子

Publications (2)

Publication Number Publication Date
DE68910906D1 DE68910906D1 (de) 1994-01-05
DE68910906T2 true DE68910906T2 (de) 1994-03-17

Family

ID=16761191

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89308891T Expired - Fee Related DE68910906T2 (de) 1988-09-02 1989-09-01 Leuchtende Vorrichtung.

Country Status (4)

Country Link
US (2) US5113233A (de)
EP (1) EP0357458B1 (de)
JP (1) JPH0268968A (de)
DE (1) DE68910906T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456176A (ja) * 1990-06-21 1992-02-24 Stanley Electric Co Ltd ２―６族間化合物半導体装置
GB2250635B (en) * 1990-11-26 1994-09-28 Sharp Kk Electroluminescent device of compound semiconductor and process for fabricating the same
US5198690A (en) * 1990-11-26 1993-03-30 Sharp Kabushiki Kaisha Electroluminescent device of II-IV compound semiconductor
JP2593960B2 (ja) * 1990-11-29 1997-03-26 シャープ株式会社 化合物半導体発光素子とその製造方法
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
JP2770717B2 (ja) * 1993-09-21 1998-07-02 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
EP1450415A3 (de) 1993-04-28 2005-05-04 Nichia Corporation Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
US5796120A (en) * 1995-12-28 1998-08-18 Georgia Tech Research Corporation Tunnel thin film electroluminescent device
AU9295098A (en) * 1997-08-29 1999-03-16 Cree Research, Inc. Robust group iii light emitting diode for high reliability in standard packagingapplications
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
US6194743B1 (en) * 1997-12-15 2001-02-27 Agilent Technologies, Inc. Nitride semiconductor light emitting device having a silver p-contact
US6570186B1 (en) * 2000-05-10 2003-05-27 Toyoda Gosei Co., Ltd. Light emitting device using group III nitride compound semiconductor
JP2003168823A (ja) 2001-09-18 2003-06-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US8101961B2 (en) 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
CN101937959A (zh) * 2010-08-12 2011-01-05 武汉华灿光电有限公司 带滤光膜的发光二极管及其制造方法
EP3079238B1 (de) * 2015-04-07 2020-08-12 Magna PT B.V. & Co. KG Elektrische maschinenanordnung und kraftfahrzeuggetriebe
US11434583B1 (en) * 2018-06-06 2022-09-06 United States Of America As Represented By The Secretary Of The Air Force Optimized Heteropitaxial growth of semiconductors

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1571620A (en) * 1976-10-29 1980-07-16 Secr Defence Electroluminescent phosphor panels
US4482841A (en) * 1982-03-02 1984-11-13 Texas Instruments Incorporated Composite dielectrics for low voltage electroluminescent displays
JPS5911688A (ja) * 1982-07-12 1984-01-21 Sanyo Electric Co Ltd 青色発光素子
JPS59172279A (ja) * 1983-03-18 1984-09-28 Sanyo Electric Co Ltd ＺｎＳ発光素子
JPS6055678A (ja) * 1983-09-06 1985-03-30 Nec Corp 発光ダイオ−ド
JPS60124397A (ja) * 1983-12-08 1985-07-03 コーア株式会社 エレクトロルミネツセンス素子
JPS631081A (ja) * 1986-06-20 1988-01-06 Matsushita Electric Ind Co Ltd 発光ダイオ−ド
JP2723227B2 (ja) * 1986-09-26 1998-03-09 株式会社東芝 半導体発光素子の製造方法
JPS63213377A (ja) * 1987-03-02 1988-09-06 Toshiba Corp 半導体発光素子
JPH0734484B2 (ja) * 1987-12-14 1995-04-12 日本電信電話株式会社 半導体発光素子
JP2708183B2 (ja) * 1988-07-21 1998-02-04 シャープ株式会社 化合物半導体発光素子
JP2588280B2 (ja) * 1989-07-10 1997-03-05 シャープ株式会社 化合物半導体発光素子

Also Published As

Publication number Publication date
EP0357458A3 (en) 1990-10-31
US5113233A (en) 1992-05-12
EP0357458A2 (de) 1990-03-07
EP0357458B1 (de) 1993-11-24
JPH0268968A (ja) 1990-03-08
DE68910906D1 (de) 1994-01-05
US5616937A (en) 1997-04-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee