KR900005632A - 광대역 갭을 갖는 단일 전도형 반도체 발광장치 - Google Patents

광대역 갭을 갖는 단일 전도형 반도체 발광장치

Info

Publication number
KR900005632A
KR900005632A KR1019890013205A KR890013205A KR900005632A KR 900005632 A KR900005632 A KR 900005632A KR 1019890013205 A KR1019890013205 A KR 1019890013205A KR 890013205 A KR890013205 A KR 890013205A KR 900005632 A KR900005632 A KR 900005632A
Authority
KR
South Korea
Prior art keywords
emitting device
semiconductor light
light emitting
conducting semiconductor
active region
Prior art date
Application number
KR1019890013205A
Other languages
English (en)
Inventor
브라이언 코랙 셀
Original Assignee
에프. 제이. 스미트
엔.브이.필립스 글로아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에프. 제이. 스미트, 엔.브이.필립스 글로아이람펜파브리켄 filed Critical 에프. 제이. 스미트
Publication of KR900005632A publication Critical patent/KR900005632A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음

Description

광대역 갭을 갖는 단일 전도형 반도체 발광장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 광 방출에 필요로 되는 전위 이하의 전위가 인가되며 광 방출은 장치에 입사하는 전자빔에 의해 여기되어지는 본 발명에 따른 LED 장치의 한 실시예에 대한 단면도
제2도는 제1도의 장치를 횡단하는 대역갭 에너지의 변화를 도시하는 제1도 장치의 활성영역에 대한 에너지 선도,
제3도는 제1도의 장치 효율이 전위웰 부가로 인해 증가되어지는 본 발명 LED 장치의 다른 실시예에 대한 제1도의 도면과 동일한 단면도.

Claims (18)

  1. 적어도 두개 이상의 전극과, 이들 두 전극간에서 Ⅱ-Ⅵ족 Ⅲ-V족 화합물 및 혼합 화합물에서 선택된 단일 전도형의 단결정 반도체 화합물로 형성된 활성영역을 구비하는 광대역 단일 전도형 반도체 발광 장치에 있어서, 반송자를 활성영역내로 주입시키기 위한 독립수단이 제공되어, 동작중에 애벌런취 항복에 의해 반송자 증배에 필요로 되는 바이어스 전위보다 낮은 바이어스 전위를 전극 양단간에 인가함으로써, 바이어스 전위없이 필요로 되는 에너지보다 낮은 에너지로 독립 반송자 도입에 의해 광 방출을 여기시키는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치
  2. 제1항에 있어서, 상기 활성영역은 적어도 하나이상의 전위웰을 포함하는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  3. 제2항에 있어서, 상기 활성영역의 성분은 n형 ZnSxSe1-위웰의 성분은 n형 ZnSe인 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치
  4. 제2항에 있어서, 상기 활성영역의 성분은 n형 AlxGa1-1N이며, 전위웰의 성분은 n형 GaN인 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치
  5. 제1항에 있어서, 상기 활성 영역은 적어도 하나이상의 계단을 포함하는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  6. 제5항에 있어서, 상기 활성영역의 성분은 구조식 n형 ZnSxSe1-x과 일치하며, 상기 성분은 계단 영역에서 균일하게 변화하는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  7. 제6항에 있어서, 계단영역간의 X의 값은 적게는 약 0.05에서 높게는 0.3까지의 범위인 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  8. 제1항에 있어서, 상기 활성영역은 적어도 하나이상의 전위웰과 적어도 하나이상의 계단영역을 포함하는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  9. 제8항에 있어서, 전위웰은 계단영역내에 위치된 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  10. 제1항에 있어서, 독립 반송자 도입은 장치의 한 표면상에 전자빔의 충돌로 인해 달성되는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  11. 제1항에 있어서, 독립 반송자 도입은 활성영역의 한 표면상에 반송자 주입 구조로 달성되는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  12. 제11항에 있어서, 반송자 주입 구조는 pn접합 다이오드인 것을 특징으로 하는 광대역갭을 갖는 단일전도형 반도체 발광장치.
  13. 제11항에 있어서, 적어도 하나이상의 반송자 주입 구조가 단결정 반도체 기판상에 위치되며, 하나이상의 에피택셜층을 구비한 적어도 하나이상의 활성영역이 기판의 반송자 주입 구조상에 위치되어지는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치
  14. 제13항에 있어서, 반송자 주입 구조는 pn접합 다이오드인 것을 특징으로 하는 광대역갭을 갖는 단일전도형 반도체 발광장치
  15. 제14항에 있어서, 기판물질은 단결정 실리콘 및 갈륨 아세나이드로 구성된 쪽에서 선택되는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  16. 제13항에 있어서, 기판은 공간을 두고 떨어져 있는 반송자 주입구조의 배열을 포함하며, 기판은 반송자 주입 구조 배열상에 위치된 활성영역의 어레이를 지지하는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  17. 제1항에 있어서, 상기 활성영역의 재결합 영역에서 파브리-페롯 공동을 형성하기 위한 한쌍의 평행표면이 제공되어, 방출된 광의 증폭 및 레이징을 증진시키는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
  18. 제17항에 있어서, 레이저출력의 경로 외측에 전극이 위치되어지는 것을 특징으로 하는 광대역갭을 갖는 단일 전도형 반도체 발광장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890013205A 1988-09-15 1989-09-12 광대역 갭을 갖는 단일 전도형 반도체 발광장치 KR900005632A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US244379 1988-09-15
US07/244,379 US4894832A (en) 1988-09-15 1988-09-15 Wide band gap semiconductor light emitting devices

Publications (1)

Publication Number Publication Date
KR900005632A true KR900005632A (ko) 1990-04-14

Family

ID=22922491

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890013205A KR900005632A (ko) 1988-09-15 1989-09-12 광대역 갭을 갖는 단일 전도형 반도체 발광장치

Country Status (5)

Country Link
US (1) US4894832A (ko)
EP (1) EP0359329B1 (ko)
JP (1) JPH0738487B2 (ko)
KR (1) KR900005632A (ko)
DE (1) DE68913877T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030073514A (ko) * 2002-03-12 2003-09-19 강석일 방수막을 가지는 먹장어 가죽 및 그 제조방법

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107311A (en) * 1989-08-02 1992-04-21 Canon Kabushiki Kaisha Semiconductor light-emitting device
RU2019881C1 (ru) * 1991-12-26 1994-09-15 Физический институт им.П.Н.Лебедева РАН Электронно-лучевая трубка
EP0549363A1 (en) * 1991-12-26 1993-06-30 Principia Optics Inc. A semiconductor laser screen of a cathode-ray tube
RU2064206C1 (ru) * 1991-12-26 1996-07-20 Физический институт им.П.Н.Лебедева РАН Лазерный экран электронно-лучевой трубки и способ его изготовления
US5254502A (en) * 1992-03-27 1993-10-19 Principia Optics, Inc. Method for making a laser screen for a cathode-ray tube
KR100292308B1 (ko) * 1992-06-19 2001-09-17 이데이 노부유끼 반도체장치
US5339003A (en) * 1992-06-22 1994-08-16 Principia Optics, Inc. Laser screen for a cathode-ray tube
US6617235B2 (en) * 1995-03-30 2003-09-09 Sumitomo Chemical Company, Limited Method of manufacturing Group III-V compound semiconductor
EP0772249B1 (en) * 1995-11-06 2006-05-03 Nichia Corporation Nitride semiconductor device
US5677923A (en) * 1996-01-11 1997-10-14 Mcdonnell Douglas Corporation Vertical cavity electron beam pumped semiconductor lasers and methods
US6396864B1 (en) * 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
DE19909978A1 (de) 1999-03-06 2000-09-07 Bayer Ag Die Verwendung von hydrophilen Polyester-Polyurethan-Schaumstoffen bei der Herstellung von Verbundstoffen für die Fahrzeuginnenausstattung
US7049761B2 (en) 2000-02-11 2006-05-23 Altair Engineering, Inc. Light tube and power supply circuit
US7966774B2 (en) * 2005-01-18 2011-06-28 Kea Jr Harry E Security shelter for small personal transportation vehicles
US7644544B2 (en) * 2005-01-18 2010-01-12 Kea Jr Harry Edwin Compact security shelter device for motorcycles, bicycles, four-wheelers and other small personal transportation vehicles
US8118447B2 (en) * 2007-12-20 2012-02-21 Altair Engineering, Inc. LED lighting apparatus with swivel connection
US7712918B2 (en) * 2007-12-21 2010-05-11 Altair Engineering , Inc. Light distribution using a light emitting diode assembly
US8360599B2 (en) 2008-05-23 2013-01-29 Ilumisys, Inc. Electric shock resistant L.E.D. based light
US7976196B2 (en) * 2008-07-09 2011-07-12 Altair Engineering, Inc. Method of forming LED-based light and resulting LED-based light
US7946729B2 (en) * 2008-07-31 2011-05-24 Altair Engineering, Inc. Fluorescent tube replacement having longitudinally oriented LEDs
US8674626B2 (en) 2008-09-02 2014-03-18 Ilumisys, Inc. LED lamp failure alerting system
US8256924B2 (en) 2008-09-15 2012-09-04 Ilumisys, Inc. LED-based light having rapidly oscillating LEDs
US8444292B2 (en) * 2008-10-24 2013-05-21 Ilumisys, Inc. End cap substitute for LED-based tube replacement light
US8324817B2 (en) 2008-10-24 2012-12-04 Ilumisys, Inc. Light and light sensor
US8214084B2 (en) 2008-10-24 2012-07-03 Ilumisys, Inc. Integration of LED lighting with building controls
US7938562B2 (en) 2008-10-24 2011-05-10 Altair Engineering, Inc. Lighting including integral communication apparatus
US8653984B2 (en) 2008-10-24 2014-02-18 Ilumisys, Inc. Integration of LED lighting control with emergency notification systems
US8901823B2 (en) 2008-10-24 2014-12-02 Ilumisys, Inc. Light and light sensor
US8556452B2 (en) 2009-01-15 2013-10-15 Ilumisys, Inc. LED lens
US8362710B2 (en) * 2009-01-21 2013-01-29 Ilumisys, Inc. Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays
US8664880B2 (en) * 2009-01-21 2014-03-04 Ilumisys, Inc. Ballast/line detection circuit for fluorescent replacement lamps
US8330381B2 (en) 2009-05-14 2012-12-11 Ilumisys, Inc. Electronic circuit for DC conversion of fluorescent lighting ballast
US8299695B2 (en) 2009-06-02 2012-10-30 Ilumisys, Inc. Screw-in LED bulb comprising a base having outwardly projecting nodes
US8421366B2 (en) * 2009-06-23 2013-04-16 Ilumisys, Inc. Illumination device including LEDs and a switching power control system
US9057493B2 (en) 2010-03-26 2015-06-16 Ilumisys, Inc. LED light tube with dual sided light distribution
EP2553332B1 (en) 2010-03-26 2016-03-23 iLumisys, Inc. Inside-out led bulb
US8541958B2 (en) 2010-03-26 2013-09-24 Ilumisys, Inc. LED light with thermoelectric generator
US8454193B2 (en) 2010-07-08 2013-06-04 Ilumisys, Inc. Independent modules for LED fluorescent light tube replacement
US8596813B2 (en) 2010-07-12 2013-12-03 Ilumisys, Inc. Circuit board mount for LED light tube
US8523394B2 (en) 2010-10-29 2013-09-03 Ilumisys, Inc. Mechanisms for reducing risk of shock during installation of light tube
US8870415B2 (en) 2010-12-09 2014-10-28 Ilumisys, Inc. LED fluorescent tube replacement light with reduced shock hazard
US9072171B2 (en) 2011-08-24 2015-06-30 Ilumisys, Inc. Circuit board mount for LED light
US9184518B2 (en) 2012-03-02 2015-11-10 Ilumisys, Inc. Electrical connector header for an LED-based light
WO2014008463A1 (en) 2012-07-06 2014-01-09 Ilumisys, Inc. Power supply assembly for led-based light tube
US9271367B2 (en) 2012-07-09 2016-02-23 Ilumisys, Inc. System and method for controlling operation of an LED-based light
US9285084B2 (en) 2013-03-14 2016-03-15 Ilumisys, Inc. Diffusers for LED-based lights
US9267650B2 (en) 2013-10-09 2016-02-23 Ilumisys, Inc. Lens for an LED-based light
CA2937642A1 (en) 2014-01-22 2015-07-30 Ilumisys, Inc. Led-based light with addressed leds
US9510400B2 (en) 2014-05-13 2016-11-29 Ilumisys, Inc. User input systems for an LED-based light
US10161568B2 (en) 2015-06-01 2018-12-25 Ilumisys, Inc. LED-based light with canted outer walls
CN109301045B (zh) * 2018-10-19 2020-07-31 京东方科技集团股份有限公司 一种发光器件及其制备方法、显示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL134669C (ko) * 1963-11-12
US3493891A (en) * 1965-08-02 1970-02-03 Ibm Avalanche breakdown semiconductor laser
US3871017A (en) * 1970-07-13 1975-03-11 Massachusetts Inst Technology High-frequency phonon generating apparatus and method
US3673514A (en) * 1970-12-31 1972-06-27 Bell Telephone Labor Inc Schottky barrier transit time negative resistance diode circuits
US3968455A (en) * 1973-02-26 1976-07-06 The United States Of America As Represented By The Secretary Of The Navy Injection laser with integral modulator
US4300107A (en) * 1979-07-18 1981-11-10 Bell Telephone Laboratories, Incorporated Trap doped laser combined with photodetector
US4461007A (en) * 1982-01-08 1984-07-17 Xerox Corporation Injection lasers with short active regions
NL8300631A (nl) * 1983-02-21 1984-09-17 Philips Nv Inrichting voor het opwekken van coherente straling.
US4620132A (en) * 1983-04-01 1986-10-28 At&T Bell Laboratories Electron beam scannable LED display device
US4577321A (en) * 1983-09-19 1986-03-18 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
EP0184250B1 (en) * 1984-12-04 1992-09-02 Koninklijke Philips Electronics N.V. Electron-beam-pumped semiconductor laser and array
NL8701497A (nl) * 1987-06-26 1989-01-16 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030073514A (ko) * 2002-03-12 2003-09-19 강석일 방수막을 가지는 먹장어 가죽 및 그 제조방법

Also Published As

Publication number Publication date
JPH02114591A (ja) 1990-04-26
EP0359329A3 (en) 1991-04-03
EP0359329A2 (en) 1990-03-21
JPH0738487B2 (ja) 1995-04-26
EP0359329B1 (en) 1994-03-16
DE68913877T2 (de) 1994-09-22
US4894832A (en) 1990-01-16
DE68913877D1 (de) 1994-04-21

Similar Documents

Publication Publication Date Title
KR900005632A (ko) 광대역 갭을 갖는 단일 전도형 반도체 발광장치
Ikeda et al. Design parameters of frequency response of GaAs—(Ga, Al) As double heterostructure LED's for optical communications
JP2002280610A (ja) 紫外発光ダイオード
US20170318632A1 (en) Solid-State Lighting Source With Integrated Electronic Modulator
KR910009909B1 (ko) 고체 레이저
US4349906A (en) Optically controlled integrated current diode lasers
US5164797A (en) Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
Ishikawa et al. Short-wavelength (638 nm) room-temperature cw operation of InGaAlP laser diodes with quaternary active layer
Pankove et al. A pnpn optical switch
US3927385A (en) Light emitting diode
GB1383960A (en) Semiconductor laser
TW200633330A (en) Laser diode device
US5272362A (en) Semiconductor light emitting device
US7103080B2 (en) Laser diode with a low absorption diode junction
Miller et al. Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes
Harth et al. Frequency response of GaAlAs light-emitting diodes
WO2011163186A1 (en) Engineering emission wavelengths in laser and light emitting devices
US4049994A (en) Light emitting diode having a short transient response time
Kasap Pn junction devices and light emitting diodes
US4796268A (en) Heterostructure semiconductor laser diode
WO1988002557A1 (en) Modulation doped radiation emitting semiconductor device
CN114336270B (zh) 硅基半导体激光器及其制作方法
JPS6139754B2 (ko)
CN118431168A (zh) 一种用于制作集成led和hemt的外延结构的制作方法
Zipperian et al. InGaAs/GaAs, strained-layer superlattice (SLS), junction photodetectors, LED's, injection laser's, and FET's for optoelectronic IC applications

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid