DE69405294D1 - Licht emittierende Halbleitervorrichtung aus AlGaInP - Google Patents

Licht emittierende Halbleitervorrichtung aus AlGaInP

Info

Publication number
DE69405294D1
DE69405294D1 DE69405294T DE69405294T DE69405294D1 DE 69405294 D1 DE69405294 D1 DE 69405294D1 DE 69405294 T DE69405294 T DE 69405294T DE 69405294 T DE69405294 T DE 69405294T DE 69405294 D1 DE69405294 D1 DE 69405294D1
Authority
DE
Germany
Prior art keywords
light emitting
emitting device
semiconductor light
algainp semiconductor
algainp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69405294T
Other languages
English (en)
Other versions
DE69405294T2 (de
Inventor
Keizo Adomi
Nobuhiko Noto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69405294D1 publication Critical patent/DE69405294D1/de
Application granted granted Critical
Publication of DE69405294T2 publication Critical patent/DE69405294T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE69405294T 1993-05-31 1994-05-16 Licht emittierende Halbleitervorrichtung aus AlGaInP Expired - Fee Related DE69405294T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15416993A JP2900754B2 (ja) 1993-05-31 1993-05-31 AlGaInP系発光装置

Publications (2)

Publication Number Publication Date
DE69405294D1 true DE69405294D1 (de) 1997-10-09
DE69405294T2 DE69405294T2 (de) 1998-04-02

Family

ID=15578344

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69405294T Expired - Fee Related DE69405294T2 (de) 1993-05-31 1994-05-16 Licht emittierende Halbleitervorrichtung aus AlGaInP

Country Status (4)

Country Link
US (1) US5444269A (de)
EP (1) EP0627772B1 (de)
JP (1) JP2900754B2 (de)
DE (1) DE69405294T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2871477B2 (ja) * 1994-09-22 1999-03-17 信越半導体株式会社 半導体発光装置およびその製造方法
EP0720242A3 (de) * 1994-12-27 1997-07-30 Shinetsu Handotai Kk Lichtemittierende Halbleitervorrichtung aus AlGaInP
JP3124694B2 (ja) * 1995-02-15 2001-01-15 三菱電線工業株式会社 半導体発光素子
JP3122324B2 (ja) * 1995-02-20 2001-01-09 三菱電線工業株式会社 半導体発光素子
DE19537543A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Lichtemittierende Diode
JP3233569B2 (ja) * 1996-03-22 2001-11-26 シャープ株式会社 半導体発光素子
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
DE19824222A1 (de) * 1998-05-29 1999-12-02 Lite On Electronics Inc Leuchtdiode mit lichtdurchlässiger Fensterschicht
JP3472714B2 (ja) * 1999-01-25 2003-12-02 シャープ株式会社 半導体発光素子の製造方法
DE10329515B9 (de) 2003-06-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektromagnetische Strahlung emittierendes Bauelement und Verfahren zu dessen Herstellung
JP2007042751A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511310A (en) * 1978-07-10 1980-01-26 Hitachi Ltd Semiconductor laser element
FR2508244A1 (fr) * 1981-06-19 1982-12-24 Thomson Csf Laser a semi-conducteur a courte longueur d'onde
US4706255A (en) * 1985-05-20 1987-11-10 Xerox Corporation Phased array semiconductor laser with preferred emission in the fundamental supermode
JPH0654821B2 (ja) * 1985-06-05 1994-07-20 日本電気株式会社 半導体発光素子
US4727557A (en) * 1985-12-30 1988-02-23 Xerox Corporation Phased array semiconductor lasers fabricated from impurity induced disordering
JP2618677B2 (ja) * 1988-03-24 1997-06-11 三菱電線工業株式会社 半導体発光装置
JPH0298984A (ja) * 1988-10-06 1990-04-11 Denki Kagaku Kogyo Kk InGaAlp 半導体発光素子
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JPH0394481A (ja) * 1989-09-07 1991-04-19 Ricoh Co Ltd アレイ状半導体発光装置
US5008718A (en) * 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
JPH03227077A (ja) * 1990-01-31 1991-10-08 Nec Corp 発光ダイオード
US5202285A (en) * 1990-04-26 1993-04-13 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing same
JP3251603B2 (ja) * 1990-08-20 2002-01-28 株式会社東芝 半導体発光装置

Also Published As

Publication number Publication date
JP2900754B2 (ja) 1999-06-02
EP0627772A2 (de) 1994-12-07
DE69405294T2 (de) 1998-04-02
US5444269A (en) 1995-08-22
JPH06342936A (ja) 1994-12-13
EP0627772B1 (de) 1997-09-03
EP0627772A3 (de) 1995-03-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee