DE69101157T2 - Lichtaussendes Halbleiterelement. - Google Patents

Lichtaussendes Halbleiterelement.

Info

Publication number
DE69101157T2
DE69101157T2 DE69101157T DE69101157T DE69101157T2 DE 69101157 T2 DE69101157 T2 DE 69101157T2 DE 69101157 T DE69101157 T DE 69101157T DE 69101157 T DE69101157 T DE 69101157T DE 69101157 T2 DE69101157 T2 DE 69101157T2
Authority
DE
Germany
Prior art keywords
light emitting
semiconductor element
emitting semiconductor
light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69101157T
Other languages
English (en)
Other versions
DE69101157D1 (de
Inventor
Hiroyuki Ota
Atsushi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Application granted granted Critical
Publication of DE69101157D1 publication Critical patent/DE69101157D1/de
Publication of DE69101157T2 publication Critical patent/DE69101157T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0218—Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
DE69101157T 1990-11-27 1991-06-25 Lichtaussendes Halbleiterelement. Expired - Fee Related DE69101157T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2324589A JPH04192586A (ja) 1990-11-27 1990-11-27 半導体発光素子

Publications (2)

Publication Number Publication Date
DE69101157D1 DE69101157D1 (de) 1994-03-24
DE69101157T2 true DE69101157T2 (de) 1994-05-19

Family

ID=18167505

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69101157T Expired - Fee Related DE69101157T2 (de) 1990-11-27 1991-06-25 Lichtaussendes Halbleiterelement.

Country Status (4)

Country Link
US (1) US5274251A (de)
EP (1) EP0487822B1 (de)
JP (1) JPH04192586A (de)
DE (1) DE69101157T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2125212A1 (en) * 1993-09-13 1995-03-14 John E. Cunningham Method for producing a precise alloy composition from input variables under nonlinear incorporation conditions
US6130147A (en) * 1994-04-07 2000-10-10 Sdl, Inc. Methods for forming group III-V arsenide-nitride semiconductor materials
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device
US5650641A (en) * 1994-09-01 1997-07-22 Toyoda Gosei Co., Ltd. Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
US5686737A (en) * 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
JP4097232B2 (ja) 1996-09-05 2008-06-11 株式会社リコー 半導体レーザ素子
US6072196A (en) * 1996-09-05 2000-06-06 Ricoh Company, Ltd. semiconductor light emitting devices
EP0854473B1 (de) * 1997-01-17 2002-09-25 Matsushita Electric Industrial Co., Ltd. Optischer Kopf und optisches Plattengerät diesen benutzend
JP3420028B2 (ja) * 1997-07-29 2003-06-23 株式会社東芝 ＧａＮ系化合物半導体素子の製造方法
TW413972B (en) * 1998-04-22 2000-12-01 Matsushita Electric Ind Co Ltd Semiconductor laser device
US6342313B1 (en) 1998-08-03 2002-01-29 The Curators Of The University Of Missouri Oxide films and process for preparing same
US6291085B1 (en) 1998-08-03 2001-09-18 The Curators Of The University Of Missouri Zinc oxide films containing P-type dopant and process for preparing same
JP2000150957A (ja) * 1998-11-12 2000-05-30 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
US6472679B1 (en) * 1999-12-31 2002-10-29 Matsushita Electric Industrial Co., Ltd. Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication
US7005685B2 (en) * 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553834B2 (de) * 1972-02-26 1980-01-26
US3982261A (en) * 1972-09-22 1976-09-21 Varian Associates Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices
US4081764A (en) * 1972-10-12 1978-03-28 Minnesota Mining And Manufacturing Company Zinc oxide light emitting diode
JPS54114988A (en) * 1978-02-28 1979-09-07 Kokusai Denshin Denwa Co Ltd Semiconductor laser
JPS5627987A (en) * 1979-08-15 1981-03-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS6439082A (en) * 1987-08-05 1989-02-09 Sharp Kk Blue-light emitting display element
CA1313247C (en) * 1988-05-17 1993-01-26 Kiyoshi Ichimura Compound semiconductor light emitting device
JP2809691B2 (ja) * 1989-04-28 1998-10-15 株式会社東芝 半導体レーザ
US5041883A (en) * 1990-09-28 1991-08-20 Hewlett-Packard Company Light emitting diodes with nitrogen doping
JPH0814477A (ja) * 1994-06-28 1996-01-16 Kubota Corp 管継手のスラッジ堆積防止具

Also Published As

Publication number Publication date
US5274251A (en) 1993-12-28
EP0487822A1 (de) 1992-06-03
DE69101157D1 (de) 1994-03-24
JPH04192586A (ja) 1992-07-10
EP0487822B1 (de) 1994-02-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee