DE3772168D1 - Lichtaussendende halbleitervorrichtung. - Google Patents

Lichtaussendende halbleitervorrichtung.

Info

Publication number
DE3772168D1
DE3772168D1 DE8787310716T DE3772168T DE3772168D1 DE 3772168 D1 DE3772168 D1 DE 3772168D1 DE 8787310716 T DE8787310716 T DE 8787310716T DE 3772168 T DE3772168 T DE 3772168T DE 3772168 D1 DE3772168 D1 DE 3772168D1
Authority
DE
Germany
Prior art keywords
light emitting
semiconductor device
emitting semiconductor
light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787310716T
Other languages
English (en)
Inventor
Mototaka Taneya
Mitsuhiro Matsumoto
Sadayoshi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3772168D1 publication Critical patent/DE3772168D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8787310716T 1986-12-05 1987-12-04 Lichtaussendende halbleitervorrichtung. Expired - Lifetime DE3772168D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61291299A JPS63142887A (ja) 1986-12-05 1986-12-05 半導体発光素子

Publications (1)

Publication Number Publication Date
DE3772168D1 true DE3772168D1 (de) 1991-09-19

Family

ID=17767090

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787310716T Expired - Lifetime DE3772168D1 (de) 1986-12-05 1987-12-04 Lichtaussendende halbleitervorrichtung.

Country Status (4)

Country Link
US (1) US4870651A (de)
EP (1) EP0270381B1 (de)
JP (1) JPS63142887A (de)
DE (1) DE3772168D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5022042A (en) * 1990-09-10 1991-06-04 General Dynamics Corp. High power laser array with stable wavelength
DE4123858C1 (en) * 1991-07-18 1992-12-03 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De Semiconductor laser array stabilising arrangement - provides fibre-shaped reflectors so that radiation characteristic extends as ray along X=axis
US5353273A (en) * 1992-08-04 1994-10-04 International Business Machines Corporation Multi-channel optical head and data storage system
US6370219B1 (en) * 1999-04-20 2002-04-09 Lucent Technologies Inc. Self-modulated, filament-based, solid state laser
US6504859B1 (en) 2000-01-21 2003-01-07 Sandia Corporation Light sources based on semiconductor current filaments
EP1146617A3 (de) * 2000-03-31 2003-04-23 Matsushita Electric Industrial Co., Ltd. Hochleistungsvielfachhalbleiterlaservorrichtung
JP4786059B2 (ja) * 2001-05-10 2011-10-05 浜松ホトニクス株式会社 半導体レーザ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4111521A (en) * 1977-01-21 1978-09-05 Xerox Corporation Semiconductor light reflector/light transmitter
US4464759A (en) * 1981-09-21 1984-08-07 Massachusetts Institute Of Technology Semiconductor diode laser system
JPS58215612A (ja) * 1982-06-08 1983-12-15 Mitsubishi Electric Corp 半導体レ−ザ−モジユ−ル
US4667331A (en) * 1984-01-20 1987-05-19 At&T Company And At&T Bell Laboratories Composite cavity laser utilizing an intra-cavity electrooptic waveguide device
FR2562328B1 (fr) * 1984-03-30 1987-11-27 Menigaux Louis Procede de fabrication d'un dispositif optique integre monolithique comprenant un laser a semi-conducteur et dispositif obtenu par ce procede
US4631730A (en) * 1984-09-28 1986-12-23 Bell Communications Research, Inc. Low noise injection laser structure
FR2574566B1 (fr) * 1984-12-11 1987-01-16 Thomson Csf Diodes emettrices/receptrices de lumiere et elements de transmission optiques non reciproques integres, et leur procede de fabrication
JP3194712B2 (ja) * 1997-06-13 2001-08-06 滋賀県 有機性廃棄物の堆肥化装置

Also Published As

Publication number Publication date
EP0270381B1 (de) 1991-08-14
JPH054835B2 (de) 1993-01-20
EP0270381A2 (de) 1988-06-08
EP0270381A3 (en) 1988-11-09
US4870651A (en) 1989-09-26
JPS63142887A (ja) 1988-06-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee