GB2367690B - A photon source - Google Patents

A photon source

Info

Publication number
GB2367690B
GB2367690B GB9927690A GB9927690A GB2367690B GB 2367690 B GB2367690 B GB 2367690B GB 9927690 A GB9927690 A GB 9927690A GB 9927690 A GB9927690 A GB 9927690A GB 2367690 B GB2367690 B GB 2367690B
Authority
GB
United Kingdom
Prior art keywords
photon source
photon
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9927690A
Other versions
GB9927690D0 (en
GB2367690A (en
Inventor
Andrew James Shields
Richard Andrew Hogg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Research Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Research Europe Ltd filed Critical Toshiba Research Europe Ltd
Priority to GB0224125A priority Critical patent/GB2377551B/en
Priority to GB0224123A priority patent/GB2377550B/en
Priority to GB9927690A priority patent/GB2367690B/en
Publication of GB9927690D0 publication Critical patent/GB9927690D0/en
Priority to US09/713,242 priority patent/US7019333B1/en
Publication of GB2367690A publication Critical patent/GB2367690A/en
Application granted granted Critical
Publication of GB2367690B publication Critical patent/GB2367690B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
GB9927690A 1999-11-16 1999-11-23 A photon source Expired - Lifetime GB2367690B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB0224125A GB2377551B (en) 1999-11-23 1999-11-23 A photon source
GB0224123A GB2377550B (en) 1999-11-23 1999-11-23 A photon source
GB9927690A GB2367690B (en) 1999-11-23 1999-11-23 A photon source
US09/713,242 US7019333B1 (en) 1999-11-16 2000-11-16 Photon source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9927690A GB2367690B (en) 1999-11-23 1999-11-23 A photon source

Publications (3)

Publication Number Publication Date
GB9927690D0 GB9927690D0 (en) 2000-01-19
GB2367690A GB2367690A (en) 2002-04-10
GB2367690B true GB2367690B (en) 2003-11-12

Family

ID=10865002

Family Applications (3)

Application Number Title Priority Date Filing Date
GB0224123A Expired - Lifetime GB2377550B (en) 1999-11-23 1999-11-23 A photon source
GB0224125A Expired - Lifetime GB2377551B (en) 1999-11-23 1999-11-23 A photon source
GB9927690A Expired - Lifetime GB2367690B (en) 1999-11-16 1999-11-23 A photon source

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB0224123A Expired - Lifetime GB2377550B (en) 1999-11-23 1999-11-23 A photon source
GB0224125A Expired - Lifetime GB2377551B (en) 1999-11-23 1999-11-23 A photon source

Country Status (1)

Country Link
GB (3) GB2377550B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2379846B (en) 2000-10-25 2003-08-27 Toshiba Res Europ Ltd Encoding,decoding and communication method and apparatus
GB2378575B (en) * 2001-05-15 2003-09-03 Toshiba Res Europ Ltd A photon source and a method of operating a photon source
US7132676B2 (en) 2001-05-15 2006-11-07 Kabushiki Kaisha Toshiba Photon source and a method of operating a photon source
GB2378864B (en) * 2001-05-18 2004-07-14 Univ Heriot Watt A weak coherent source for use in fibre-based quantum key distribution systems
GB2380605B (en) * 2001-10-02 2004-01-14 Toshiba Res Europ Ltd A photon source and method of its fabrication and operation
GB2403344B (en) 2003-06-24 2005-08-24 Toshiba Res Europ Ltd A photon source and method of fabricating a photon source
CN100372599C (en) * 2004-02-19 2008-03-05 上海交通大学 Preparation method of nucleous-shell type nanometer composite particle of magnetic micro particle and quantum point
WO2005085946A1 (en) * 2004-03-02 2005-09-15 The University Of Melbourne A photon source
GB2420908B (en) * 2004-12-03 2008-01-23 Toshiba Res Europ Ltd Photon source
EP1729383A1 (en) 2005-05-30 2006-12-06 Ecole Polytechnique Federale De Lausanne Single photon source
DE102005057800B4 (en) 2005-11-30 2009-02-26 Technische Universität Berlin Single photon source and method for its production and operation
WO2008064407A1 (en) * 2006-11-28 2008-06-05 Uniquest Pty Limited Single photon source
GB2476926B (en) * 2009-11-06 2012-05-02 Toshiba Res Europ Ltd Tuneable quantum light source
GB2480265B (en) * 2010-05-10 2013-10-02 Toshiba Res Europ Ltd A semiconductor device and a method of fabricating a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5607876A (en) * 1991-10-28 1997-03-04 Xerox Corporation Fabrication of quantum confinement semiconductor light-emitting devices
EP0881691A2 (en) * 1997-05-30 1998-12-02 Matsushita Electric Industrial Co., Ltd. Quantum dot device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5559822A (en) * 1995-06-07 1996-09-24 The Regents Of The University Of Colorado Silicon quantum dot laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5607876A (en) * 1991-10-28 1997-03-04 Xerox Corporation Fabrication of quantum confinement semiconductor light-emitting devices
EP0881691A2 (en) * 1997-05-30 1998-12-02 Matsushita Electric Industrial Co., Ltd. Quantum dot device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
J. Lightwave Technology, vol 17, no 11, Nov. 1999, pages 2089-2095 *
JETP Lett, vol 63, no 8, 25 Apr 1996, pages 687-693 *
Nature, vol 397, 11 Feb 1999, pages 500-503 *

Also Published As

Publication number Publication date
GB0224123D0 (en) 2002-11-27
GB2377551B (en) 2003-11-12
GB9927690D0 (en) 2000-01-19
GB2377551A (en) 2003-01-15
GB2377550B (en) 2003-11-12
GB2367690A (en) 2002-04-10
GB0224125D0 (en) 2002-11-27
GB2377550A (en) 2003-01-15

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20191122