DE69230694D1 - Herstellungsverfahren einer Halbleiterlaservorrichtung - Google Patents

Herstellungsverfahren einer Halbleiterlaservorrichtung

Info

Publication number
DE69230694D1
DE69230694D1 DE69230694T DE69230694T DE69230694D1 DE 69230694 D1 DE69230694 D1 DE 69230694D1 DE 69230694 T DE69230694 T DE 69230694T DE 69230694 T DE69230694 T DE 69230694T DE 69230694 D1 DE69230694 D1 DE 69230694D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69230694T
Other languages
English (en)
Other versions
DE69230694T2 (de
Inventor
Masanori Watanabe
Ken Ohbayashi
Kazuaki Sasaki
Osamu Yamamoto
Mitsuhiro Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4046975A external-priority patent/JP2849500B2/ja
Priority claimed from JP4697692A external-priority patent/JP2849501B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69230694D1 publication Critical patent/DE69230694D1/de
Application granted granted Critical
Publication of DE69230694T2 publication Critical patent/DE69230694T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/104—Mask, movable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69230694T 1992-03-04 1992-12-24 Herstellungsverfahren einer Halbleiterlaservorrichtung Expired - Fee Related DE69230694T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4046975A JP2849500B2 (ja) 1992-03-04 1992-03-04 半導体レーザの製造方法
JP4697692A JP2849501B2 (ja) 1992-03-04 1992-03-04 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
DE69230694D1 true DE69230694D1 (de) 2000-03-23
DE69230694T2 DE69230694T2 (de) 2000-07-06

Family

ID=26387151

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69230694T Expired - Fee Related DE69230694T2 (de) 1992-03-04 1992-12-24 Herstellungsverfahren einer Halbleiterlaservorrichtung
DE69224617T Expired - Fee Related DE69224617T2 (de) 1992-03-04 1992-12-24 Herstellungsverfahren für einen Halbleiterlaser

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69224617T Expired - Fee Related DE69224617T2 (de) 1992-03-04 1992-12-24 Herstellungsverfahren für einen Halbleiterlaser

Country Status (3)

Country Link
US (2) US5413956A (de)
EP (2) EP0789430B1 (de)
DE (2) DE69230694T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0141057B1 (ko) * 1994-11-19 1998-07-15 이헌조 반도체 레이저 제조방법
JPH0983061A (ja) * 1995-09-08 1997-03-28 Sharp Corp 半導体レーザ素子の製造方法および半導体レーザ素子製造装置
DE19536434C2 (de) * 1995-09-29 2001-11-15 Siemens Ag Verfahren zum Herstellen eines Halbleiterlaser-Bauelements
US5898721A (en) * 1997-02-14 1999-04-27 Opto Power Corporation InGaAsP/AlGaAs/GaAs hetero structure diode laser containing indium
KR100767658B1 (ko) * 2000-05-04 2007-10-17 엘지전자 주식회사 질화물 발광소자 제조 방법
US6451120B1 (en) * 2000-09-21 2002-09-17 Adc Telecommunications, Inc. Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers
DE10048475C2 (de) * 2000-09-29 2003-04-17 Lumics Gmbh Passivierung der Resonatorendflächen von Halbleiterlasern auf der Basis von III-V-Halbleitermaterial
GB0206482D0 (en) * 2002-03-19 2002-05-01 Denselight Semiconductors Pte Method and apparatus for optical in wafer fabrication reactors
TWI609505B (zh) * 2010-02-09 2017-12-21 晶元光電股份有限公司 光電元件
US10205059B2 (en) 2010-02-09 2019-02-12 Epistar Corporation Optoelectronic device and the manufacturing method thereof
US9640728B2 (en) 2010-02-09 2017-05-02 Epistar Corporation Optoelectronic device and the manufacturing method thereof
US8483248B2 (en) * 2010-09-14 2013-07-09 Raytheon Company Laser crystal components joined with thermal management devices
GB201121300D0 (en) 2011-12-12 2012-01-25 Glaxo Group Ltd Novel composition
US10991547B2 (en) * 2019-09-25 2021-04-27 Applied Materials, Inc. Method and device for a carrier proximity mask
US10957512B1 (en) * 2019-09-25 2021-03-23 Applied Materials, Inc. Method and device for a carrier proximity mask

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5274292A (en) * 1975-12-17 1977-06-22 Hitachi Ltd Semiconductor laser element
JPS5527474A (en) * 1978-08-19 1980-02-27 Arata Kogyosho:Kk Manufacture of spherical head for use of oiler or the like of diesel engine
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device
US4563368A (en) * 1983-02-14 1986-01-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
JPS59231885A (ja) * 1983-06-14 1984-12-26 Hitachi Ltd 光半導体装置
JPS6085586A (ja) * 1983-10-17 1985-05-15 Sony Corp 半導体レ−ザ−の製法
JPH0666512B2 (ja) * 1984-11-30 1994-08-24 ソニ−株式会社 半導体レ−ザの製造方法
JPS61220390A (ja) * 1985-03-26 1986-09-30 Toshiba Corp 半導体レ−ザの端面保護膜形成用治具
US4839308A (en) * 1986-07-21 1989-06-13 Gte Laboratories Incorporated Method of making an external-coupled-cavity diode laser
NL8700904A (nl) * 1987-04-16 1988-11-16 Philips Nv Halfgeleiderlaserinrichting en werkwijze voor het vervaardigen daarvan.
JPS63308992A (ja) * 1987-06-11 1988-12-16 Nec Corp 光半導体素子の製造方法
JPS6433987A (en) * 1987-07-29 1989-02-03 Nec Corp Semiconductor laser device
JPS6455891A (en) * 1987-08-27 1989-03-02 Seiko Epson Corp Jig for forming end surface protecting film of semiconductor laser
JPH02123782A (ja) * 1988-11-02 1990-05-11 Matsushita Electric Ind Co Ltd 半導体レーザ装置の製造方法
US4910166A (en) * 1989-01-17 1990-03-20 General Electric Company Method for partially coating laser diode facets
US5026660A (en) * 1989-09-06 1991-06-25 Codenoll Technology Corporation Methods for making photodectors
JPH03268382A (ja) * 1990-03-16 1991-11-29 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH0834337B2 (ja) * 1990-04-02 1996-03-29 シャープ株式会社 半導体レーザ素子の製造方法
JP2680917B2 (ja) * 1990-08-01 1997-11-19 シャープ株式会社 半導体レーザ素子の製造方法
US5228047A (en) * 1990-09-21 1993-07-13 Sharp Kabushiki Kaisha Semiconductor laser device and a method for producing the same

Also Published As

Publication number Publication date
EP0789430A2 (de) 1997-08-13
DE69224617T2 (de) 1998-09-10
EP0789430B1 (de) 2000-02-16
DE69224617D1 (de) 1998-04-09
US5413956A (en) 1995-05-09
EP0558856A2 (de) 1993-09-08
US5571750A (en) 1996-11-05
EP0558856B1 (de) 1998-03-04
DE69230694T2 (de) 2000-07-06
EP0558856A3 (en) 1993-12-29
EP0789430A3 (de) 1997-11-05

Similar Documents

Publication Publication Date Title
DE69309817D1 (de) Herstellungsverfahren einer lichtemittierenden Halbleitervorrichtung
DE69534709D1 (de) Herstellungsverfahren einer Halbleiteranordnung
DE69634289D1 (de) Herstellungsverfahren einer Halbleitervorrichtung
DE68927026D1 (de) Herstellungsverfahren einer Halbleitervorrichtung
DE69030775D1 (de) Herstelllungsverfahren einer Halbleitervorrichtung
KR890012373A (ko) 반도체장치의 제조방법
DE69226133D1 (de) Verbindungsstruktur einer Halbleiteranordnung und ein Herstellungsverfahren dafür
DE69317800D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69331817D1 (de) Herstellungsverfahren eines Halbleitersubstrat
DE69308727D1 (de) Herstellungsverfahren von einer Halbleitervorrichtung mit einer begrabenen Kontaktstruktur
DE69330980D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung
KR900012335A (ko) 반도체장치의 제조방법
KR900008660A (ko) 반도체장치의 제조방법
KR900015300A (ko) 반도체장치의 제조방법
DE69323979D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE69230694D1 (de) Herstellungsverfahren einer Halbleiterlaservorrichtung
DE69006434D1 (de) Herstellungsverfahren einer Halbleiteranordnung.
DE3684539D1 (de) Herstellungsverfahren einer halbleitervorrichtung.
FI952719A (fi) Menetelmä puolijohdelaitteen valmistamiseksi
KR900019176A (ko) 반도체장치의 제조방법
DE69330870D1 (de) Planarisierungsverfahren von einer Halbleitervorrichtung
DE69209045D1 (de) Halbleiterlaser
KR900012342A (ko) 반도체장치의 제조방법
KR900012331A (ko) 반도체장치의 제조방법
KR900013613A (ko) 반도체장치의 제조방법

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee