JPS6455891A - Jig for forming end surface protecting film of semiconductor laser - Google Patents

Jig for forming end surface protecting film of semiconductor laser

Info

Publication number
JPS6455891A
JPS6455891A JP21392487A JP21392487A JPS6455891A JP S6455891 A JPS6455891 A JP S6455891A JP 21392487 A JP21392487 A JP 21392487A JP 21392487 A JP21392487 A JP 21392487A JP S6455891 A JPS6455891 A JP S6455891A
Authority
JP
Japan
Prior art keywords
semiconductor laser
bar
spacer
shaped semiconductor
protecting film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21392487A
Other languages
Japanese (ja)
Inventor
Katsuto Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP21392487A priority Critical patent/JPS6455891A/en
Publication of JPS6455891A publication Critical patent/JPS6455891A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent falling of a bar-shaped semiconductor laser from a jig for forming the end-surface protecting film of the semiconductor laser and to prevent the formation of the protecting film on the entire surface of the electrode of the semiconductor laser, by attaching a spacer between the bar- shaped semiconductor laser and a cover. CONSTITUTION:A bar-shaped semiconductor laser 103 is coupled into the groove part of a base 101 so that an active layer 104 is positioned at the upper side. A spacer 107 comprising single crystal silicon is coupled from the upper side and fixed with a cover 102. A part of an electrode 105 is exposed from the spacer 107. The upper part of the groove is widely formed so that an evaporating agent for protection is sufficiently applied to an end surface 106 of a resonator. In this way, the upper side of the bar-shaped semiconductor laser 103 is pushed with the spacer 107, which is slightly narrower than the width of the bar-shaped semiconductor laser, and the spacer 107 is fixed with the groove at both end parts of the base 101. Therefore, the bar-shaped semiconductor laser 103 does not fall out of the jig, and the protecting film is not formed on the entire surface of the electrode 105.
JP21392487A 1987-08-27 1987-08-27 Jig for forming end surface protecting film of semiconductor laser Pending JPS6455891A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21392487A JPS6455891A (en) 1987-08-27 1987-08-27 Jig for forming end surface protecting film of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21392487A JPS6455891A (en) 1987-08-27 1987-08-27 Jig for forming end surface protecting film of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6455891A true JPS6455891A (en) 1989-03-02

Family

ID=16647299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21392487A Pending JPS6455891A (en) 1987-08-27 1987-08-27 Jig for forming end surface protecting film of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6455891A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0558856A2 (en) * 1992-03-04 1993-09-08 Sharp Kabushiki Kaisha A method for producing a semiconductor laser device
EP0697756A2 (en) * 1990-09-21 1996-02-21 Sharp Kabushiki Kaisha A semiconductor laser device and a method for producing the same
KR100361036B1 (en) * 2000-02-07 2002-11-18 한국과학기술연구원 Sample holder apparatus of semicondutor optical devices chip for antireflection coatings

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697756A2 (en) * 1990-09-21 1996-02-21 Sharp Kabushiki Kaisha A semiconductor laser device and a method for producing the same
EP0697756A3 (en) * 1990-09-21 1996-07-17 Sharp Kk A semiconductor laser device and a method for producing the same
EP0558856A2 (en) * 1992-03-04 1993-09-08 Sharp Kabushiki Kaisha A method for producing a semiconductor laser device
KR100361036B1 (en) * 2000-02-07 2002-11-18 한국과학기술연구원 Sample holder apparatus of semicondutor optical devices chip for antireflection coatings

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