DE69224506T2 - Elektronenstrahlgerät - Google Patents
ElektronenstrahlgerätInfo
- Publication number
- DE69224506T2 DE69224506T2 DE69224506T DE69224506T DE69224506T2 DE 69224506 T2 DE69224506 T2 DE 69224506T2 DE 69224506 T DE69224506 T DE 69224506T DE 69224506 T DE69224506 T DE 69224506T DE 69224506 T2 DE69224506 T2 DE 69224506T2
- Authority
- DE
- Germany
- Prior art keywords
- sample
- electrode
- electron beam
- pole piece
- secondary electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010894 electron beam technology Methods 0.000 title claims description 63
- 230000005684 electric field Effects 0.000 claims description 38
- 239000002245 particle Substances 0.000 claims description 15
- 230000004907 flux Effects 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000001133 acceleration Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 2
- 239000000523 sample Substances 0.000 description 115
- 238000003384 imaging method Methods 0.000 description 40
- 238000010586 diagram Methods 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000010408 film Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 238000012937 correction Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
- H01J2237/281—Bottom of trenches or holes
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3335985A JP2817072B2 (ja) | 1991-11-27 | 1991-11-27 | 走査電子顕微鏡 |
| JP3335981A JP2911281B2 (ja) | 1991-11-27 | 1991-11-27 | 電子線装置およびその観察方法 |
| JP3335986A JP2789399B2 (ja) | 1991-11-27 | 1991-11-27 | 走査型電子顕微鏡およびその観察方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69224506D1 DE69224506D1 (de) | 1998-04-02 |
| DE69224506T2 true DE69224506T2 (de) | 1998-10-01 |
Family
ID=27340757
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69233781T Expired - Lifetime DE69233781D1 (de) | 1991-11-27 | 1992-11-25 | Elektronenstrahlgerät |
| DE69231213T Expired - Lifetime DE69231213T2 (de) | 1991-11-27 | 1992-11-25 | Elektronenstrahlgerät |
| DE69224506T Expired - Lifetime DE69224506T2 (de) | 1991-11-27 | 1992-11-25 | Elektronenstrahlgerät |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69233781T Expired - Lifetime DE69233781D1 (de) | 1991-11-27 | 1992-11-25 | Elektronenstrahlgerät |
| DE69231213T Expired - Lifetime DE69231213T2 (de) | 1991-11-27 | 1992-11-25 | Elektronenstrahlgerät |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5412209A (enExample) |
| EP (3) | EP0949653B1 (enExample) |
| DE (3) | DE69233781D1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017205231B3 (de) | 2017-03-28 | 2018-08-09 | Carl Zeiss Microscopy Gmbh | Teilchenoptische Vorrichtung und Teilchenstrahlsystem |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5302828A (en) * | 1992-12-03 | 1994-04-12 | Metrologix Corporation | Scanning techniques in particle beam devices for reducing the effects of surface charge accumulation |
| EP0767482B1 (en) * | 1994-04-12 | 1999-09-22 | Koninklijke Philips Electronics N.V. | Particle-optical apparatus comprising a detector for secondary electrons |
| US5731586A (en) * | 1995-05-25 | 1998-03-24 | Jeol Ltd. | Magnetic-electrostatic compound objective lens |
| DE19605855A1 (de) * | 1996-02-16 | 1997-08-21 | Act Advanced Circuit Testing | Detektorobjektiv für Korpuskularstrahlgeräte |
| US5834774A (en) * | 1996-07-24 | 1998-11-10 | Jeol Ltd. | Scanning electron microscope |
| US6066849A (en) * | 1997-01-16 | 2000-05-23 | Kla Tencor | Scanning electron beam microscope |
| US6504393B1 (en) | 1997-07-15 | 2003-01-07 | Applied Materials, Inc. | Methods and apparatus for testing semiconductor and integrated circuit structures |
| DE19732093B4 (de) * | 1997-07-25 | 2008-09-25 | Carl Zeiss Nts Gmbh | Korpuskularstrahlgerät |
| DE19845329C2 (de) * | 1998-03-10 | 2001-09-27 | Erik Essers | Rasterelektronenmikroskop |
| WO1999046797A1 (de) | 1998-03-10 | 1999-09-16 | Erik Essers | Rasterelektronenmikroskop |
| DE69806897T2 (de) * | 1998-04-24 | 2002-11-28 | Advantest Corp., Tokio/Tokyo | Dynamisch kompensierte Objektivlinse-Detektor-Vorrichtung und Verfahren |
| JP3041600B2 (ja) * | 1998-05-19 | 2000-05-15 | セイコーインスツルメンツ株式会社 | 複合荷電粒子ビーム装置 |
| US6124140A (en) * | 1998-05-22 | 2000-09-26 | Micron Technology, Inc. | Method for measuring features of a semiconductor device |
| TW402769B (en) * | 1998-06-13 | 2000-08-21 | Samsung Electronics Co Ltd | Apparatus and method for contact failure inspection in semiconductor devices |
| US6198299B1 (en) | 1998-08-27 | 2001-03-06 | The Micromanipulator Company, Inc. | High Resolution analytical probe station |
| US6744268B2 (en) | 1998-08-27 | 2004-06-01 | The Micromanipulator Company, Inc. | High resolution analytical probe station |
| US6570154B1 (en) | 1998-09-08 | 2003-05-27 | Kla-Tencor Technologies Corporation | Scanning electron beam microscope |
| US6362486B1 (en) * | 1998-11-12 | 2002-03-26 | Schlumberger Technologies, Inc. | Magnetic lens for focusing a charged particle beam |
| JP4093662B2 (ja) * | 1999-01-04 | 2008-06-04 | 株式会社日立製作所 | 走査形電子顕微鏡 |
| US6252412B1 (en) | 1999-01-08 | 2001-06-26 | Schlumberger Technologies, Inc. | Method of detecting defects in patterned substrates |
| US6414308B1 (en) * | 1999-03-12 | 2002-07-02 | International Business Machines Corporation | Method for determining opened/unopened semiconductor contacts using a scanning electron microscope |
| JP4207307B2 (ja) * | 1999-04-26 | 2009-01-14 | 日新イオン機器株式会社 | チャージアップ測定装置 |
| EP1052679B1 (en) * | 1999-05-06 | 2006-11-08 | Advantest Corporation | Corpuscular beam device |
| US6586733B1 (en) | 1999-05-25 | 2003-07-01 | Kla-Tencor | Apparatus and methods for secondary electron emission microscope with dual beam |
| US6583413B1 (en) * | 1999-09-01 | 2003-06-24 | Hitachi, Ltd. | Method of inspecting a circuit pattern and inspecting instrument |
| JP2001110351A (ja) * | 1999-10-05 | 2001-04-20 | Hitachi Ltd | 走査電子顕微鏡 |
| JP4274649B2 (ja) * | 1999-10-07 | 2009-06-10 | 株式会社日立製作所 | 微細パターン検査方法及び装置 |
| JP2001156134A (ja) * | 1999-11-26 | 2001-06-08 | Mitsubishi Electric Corp | 半導体装置の検査方法及び検査装置 |
| US6787772B2 (en) * | 2000-01-25 | 2004-09-07 | Hitachi, Ltd. | Scanning electron microscope |
| US20010032938A1 (en) * | 2000-02-09 | 2001-10-25 | Gerlach Robert L. | Through-the-lens-collection of secondary particles for a focused ion beam system |
| JP4331854B2 (ja) * | 2000-03-24 | 2009-09-16 | 富士通マイクロエレクトロニクス株式会社 | 走査型電子顕微鏡装置とその制御方法 |
| US6407388B1 (en) * | 2000-04-18 | 2002-06-18 | Advantest Corp. | Corpuscular beam device |
| RU2186665C2 (ru) * | 2000-06-06 | 2002-08-10 | Алтайский государственный технический университет им. И.И.Ползунова | Устройство для электронно-лучевой сварки |
| WO2002052610A1 (en) * | 2000-12-22 | 2002-07-04 | Koninklijke Philips Electronics N.V. | Sem provided with a secondary electron detector having a central electrode |
| JP2002324510A (ja) * | 2001-04-25 | 2002-11-08 | Jeol Ltd | 走査電子顕微鏡 |
| US7095019B1 (en) | 2003-05-30 | 2006-08-22 | Chem-Space Associates, Inc. | Remote reagent chemical ionization source |
| DE10230929A1 (de) | 2002-07-09 | 2004-01-29 | Leo Elektronenmikroskopie Gmbh | Verfahren zum elektronenmikroskopischen Beobachten einer Halbleiteranordnung und Vorrichtung hierfür |
| US7528614B2 (en) * | 2004-12-22 | 2009-05-05 | Applied Materials, Inc. | Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam |
| DE10301579A1 (de) * | 2003-01-16 | 2004-07-29 | Leo Elektronenmikroskopie Gmbh | Elektronenstrahlgerät und Detektoranordnung |
| KR101110224B1 (ko) | 2003-01-27 | 2012-02-15 | 가부시끼가이샤 도시바 | 샘플에서 반사된 전자들을 이용하여 샘플을 검사하는 맵핑 투영식 전자빔 장치 |
| US6812462B1 (en) | 2003-02-21 | 2004-11-02 | Kla-Tencor Technologies Corporation | Dual electron beam instrument for multi-perspective |
| US7138626B1 (en) | 2005-05-05 | 2006-11-21 | Eai Corporation | Method and device for non-contact sampling and detection |
| JP4828162B2 (ja) * | 2005-05-31 | 2011-11-30 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡応用装置および試料検査方法 |
| US7568401B1 (en) | 2005-06-20 | 2009-08-04 | Science Applications International Corporation | Sample tube holder |
| JP4901196B2 (ja) * | 2005-07-29 | 2012-03-21 | 株式会社日立ハイテクノロジーズ | 画像形成方法、及び荷電粒子線装置 |
| US7576322B2 (en) * | 2005-11-08 | 2009-08-18 | Science Applications International Corporation | Non-contact detector system with plasma ion source |
| WO2007117397A2 (en) * | 2006-03-31 | 2007-10-18 | Fei Company | Improved detector for charged particle beam instrument |
| JP4906409B2 (ja) * | 2006-06-22 | 2012-03-28 | 株式会社アドバンテスト | 電子ビーム寸法測定装置及び電子ビーム寸法測定方法 |
| JP5054960B2 (ja) * | 2006-10-13 | 2012-10-24 | 株式会社日立ハイテクノロジーズ | 電子線を用いた試料の観察方法 |
| EP1916695B1 (en) | 2006-10-25 | 2018-12-05 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam apparatus and method for operating it |
| JP4914180B2 (ja) * | 2006-11-08 | 2012-04-11 | 株式会社日立ハイテクノロジーズ | 時定数測定機能を搭載した走査型電子顕微鏡 |
| US8123396B1 (en) | 2007-05-16 | 2012-02-28 | Science Applications International Corporation | Method and means for precision mixing |
| JP2009099540A (ja) * | 2007-09-27 | 2009-05-07 | Hitachi High-Technologies Corp | 試料の検査，測定方法、及び走査電子顕微鏡 |
| US8008617B1 (en) | 2007-12-28 | 2011-08-30 | Science Applications International Corporation | Ion transfer device |
| WO2010095392A1 (ja) | 2009-02-20 | 2010-08-26 | 株式会社日立ハイテクノロジーズ | 試料観察方法および走査電子顕微鏡 |
| US8071957B1 (en) | 2009-03-10 | 2011-12-06 | Science Applications International Corporation | Soft chemical ionization source |
| JP5645386B2 (ja) * | 2009-09-30 | 2014-12-24 | 株式会社日立製作所 | 電磁場印加装置 |
| JP5188529B2 (ja) | 2010-03-30 | 2013-04-24 | 株式会社日立ハイテクノロジーズ | 電子ビーム照射方法、及び走査電子顕微鏡 |
| JP5372856B2 (ja) | 2010-07-15 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP5341924B2 (ja) | 2011-01-28 | 2013-11-13 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| JP5932428B2 (ja) * | 2012-03-28 | 2016-06-08 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| JP5838138B2 (ja) | 2012-08-30 | 2015-12-24 | 株式会社日立ハイテクノロジーズ | 欠陥観察システムおよび欠陥観察方法 |
| CZ2016597A3 (cs) | 2016-09-26 | 2018-05-02 | Tescan Brno, S.R.O. | Objektivová čočka pro zařízení využívající nejméně jednoho svazku nabitých částic |
| CN109935527B (zh) * | 2017-12-15 | 2022-11-04 | 长鑫存储技术有限公司 | 接触孔检测方法 |
| JP2021005497A (ja) * | 2019-06-26 | 2021-01-14 | キオクシア株式会社 | 電子顕微鏡およびビーム照射方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1246744A (en) * | 1969-01-02 | 1971-09-15 | Graham Stuart Plows | Electron beam apparatus |
| JPS5136150A (ja) * | 1974-09-21 | 1976-03-26 | Nippon Telegraph & Telephone | Hikarireishinki |
| JPS5275261A (en) * | 1975-12-19 | 1977-06-24 | Jeol Ltd | Test piece image dispaly unit |
| JPS5220819A (en) * | 1976-08-16 | 1977-02-17 | Matsushita Electric Ind Co Ltd | Attaching method of parts |
| JPS59190610A (ja) * | 1983-04-13 | 1984-10-29 | Hitachi Ltd | 寸法測定装置 |
| JPS6095843A (ja) * | 1983-10-28 | 1985-05-29 | Hitachi Ltd | 電子ビ−ム装置 |
| JPH0736321B2 (ja) * | 1985-06-14 | 1995-04-19 | イーツエーテー、インテグレイテツド、サーキツト、テスチング、ゲゼルシヤフト、フユア、ハルプライタープリユーフテヒニク、ミツト、ベシユレンクテル、ハフツング | 定量的電位測定用スペクトロメ−タ−対物レンズ装置 |
| DE3621045A1 (de) * | 1985-06-24 | 1987-01-02 | Nippon Telegraph & Telephone | Strahlerzeugende vorrichtung |
| DE3532781A1 (de) * | 1985-09-13 | 1987-03-19 | Siemens Ag | Anordnung zur detektion von sekundaer- und/oder rueckstreuelektronen in einem elektronenstrahlgeraet |
| US4928010A (en) * | 1986-11-28 | 1990-05-22 | Nippon Telegraph And Telephone Corp. | Observing a surface using a charged particle beam |
| GB2201288B (en) * | 1986-12-12 | 1990-08-22 | Texas Instruments Ltd | Electron beam apparatus |
| US4831267A (en) * | 1987-02-16 | 1989-05-16 | Siemens Aktiengesellschaft | Detector for charged particles |
| JPS6452370A (en) * | 1987-08-24 | 1989-02-28 | Hitachi Ltd | Potential measuring apparatus |
| US4926054A (en) * | 1988-03-17 | 1990-05-15 | Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh | Objective lens for focusing charged particles in an electron microscope |
| JPH0766770B2 (ja) * | 1989-03-10 | 1995-07-19 | 株式会社日立製作所 | 電子線照射装置 |
| CA1308203C (en) * | 1989-06-01 | 1992-09-29 | Nanoquest (Canada) Inc. | Magnification compensation apparatus |
| DE4020806A1 (de) * | 1990-06-29 | 1991-01-31 | Siemens Ag | Verfahren zur verminderung der aufladung einer von einem teilchenstrahl abgetasteten probe |
-
1992
- 1992-11-25 DE DE69233781T patent/DE69233781D1/de not_active Expired - Lifetime
- 1992-11-25 EP EP99111213A patent/EP0949653B1/en not_active Expired - Lifetime
- 1992-11-25 EP EP97112851A patent/EP0810629B1/en not_active Expired - Lifetime
- 1992-11-25 EP EP92120110A patent/EP0548573B1/en not_active Expired - Lifetime
- 1992-11-25 DE DE69231213T patent/DE69231213T2/de not_active Expired - Lifetime
- 1992-11-25 DE DE69224506T patent/DE69224506T2/de not_active Expired - Lifetime
- 1992-11-27 US US07/982,768 patent/US5412209A/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017205231B3 (de) | 2017-03-28 | 2018-08-09 | Carl Zeiss Microscopy Gmbh | Teilchenoptische Vorrichtung und Teilchenstrahlsystem |
| US10755889B2 (en) | 2017-03-28 | 2020-08-25 | Carl Zeiss Microscopy Gmbh | Particle-optical apparatus and particle beam system |
| US11087949B2 (en) | 2017-03-28 | 2021-08-10 | Carl Zeiss Microscopy Gmbh | Particle-optical apparatus and particle beam system |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0949653A2 (en) | 1999-10-13 |
| EP0949653A3 (en) | 2005-12-21 |
| EP0810629A1 (en) | 1997-12-03 |
| DE69231213D1 (de) | 2000-08-03 |
| EP0810629B1 (en) | 2000-06-28 |
| EP0548573B1 (en) | 1998-02-25 |
| EP0949653B1 (en) | 2010-02-17 |
| US5412209A (en) | 1995-05-02 |
| EP0548573A2 (en) | 1993-06-30 |
| DE69233781D1 (de) | 2010-04-01 |
| EP0548573A3 (enExample) | 1994-03-09 |
| DE69224506D1 (de) | 1998-04-02 |
| DE69231213T2 (de) | 2001-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69224506T2 (de) | Elektronenstrahlgerät | |
| DE102018007652B4 (de) | Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen | |
| DE69432399T2 (de) | Rasterelektronenmikroskop | |
| DE69422825T2 (de) | Wahrnehmungsvorrichtung für die messung starker höhenunterschiedsverhältnisse | |
| DE69332995T2 (de) | Raster-Elektronenmikroskop | |
| DE69317847T2 (de) | Raster-Elektronenmikroskop | |
| DE10000365B4 (de) | Spannungskontrastverfahren zum Nachweis von Defekten in einem strukturiertem Substrat | |
| US6218664B1 (en) | SEM provided with an electrostatic objective and an electrical scanning device | |
| EP0218829B1 (de) | Anordnung zur Detektion von Sekundär- und/oder Rückstreuelektronen in einem Elektronenstrahlgerät | |
| US6259094B1 (en) | Electron beam inspection method and apparatus | |
| DE69821467T2 (de) | Rasterelektronenmikroskop unter kontrollierter umgebung mit einem magnetfeld zur erhöhten sekundärelektronenerfassung | |
| DE69133256T2 (de) | Rasterelekronenmikroskop und Bilderzeugungsverfahren | |
| DE102021205394B4 (de) | Verfahren zum Betrieb eines Vielstrahlmikroskops mit an eine Inspektionsstelle angepassten Einstellungen | |
| DE19549022C2 (de) | Rasterelektronenmikroskop und Probenbetrachtungsverfahren mittels eines solchen | |
| DE112015001235B4 (de) | Vorrichtung und verfahren zur abbildung mittels eines elektronenstrahls unter verwendung eines monochromators mit doppeltem wien-filter sowie monochromator | |
| DE10156275A1 (de) | Detektoranordnung und Detektionsverfahren | |
| DE2556291C3 (de) | Raster-Ionenmikroskop | |
| DE69920182T2 (de) | Korpuskularstrahloptisches gerät mit auger-elektronendetektion | |
| DE112018007498B4 (de) | Ladungsträgerstrahlvorrichtung und Verfahren zum Einstellen der Position eines Detektors einer Ladungsträgerstrahlvorrichtung | |
| DE112021004532T5 (de) | Ladungsträgerstrahlvorrichtung und Probenbeobachtungsverfahren | |
| DE69628367T2 (de) | Rasterelektronenmikroskop | |
| EP0241060B1 (en) | Apparatus for energy-selective visualisation | |
| DE4423407A1 (de) | Vorrichtung zum Abtasten mit einem fokussiertem Ionenstrahl, ein Beobachtungsverfahren, das fokussierte Ionenstrahlen verwendet, und ein Bearbeitungsverfahren, das fokussierte Ionenstrahlen verwendet | |
| DE2043749C3 (de) | Raster-Korpuskularstrahlmikroskop | |
| EP0108375B1 (de) | Verfahren zur Kontrolle von elektronenstrahlgravierten Druckformoberflächen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| R071 | Expiry of right |
Ref document number: 548573 Country of ref document: EP |