DE69224506D1 - Elektronenstrahlgerät - Google Patents

Elektronenstrahlgerät

Info

Publication number
DE69224506D1
DE69224506D1 DE69224506T DE69224506T DE69224506D1 DE 69224506 D1 DE69224506 D1 DE 69224506D1 DE 69224506 T DE69224506 T DE 69224506T DE 69224506 T DE69224506 T DE 69224506T DE 69224506 D1 DE69224506 D1 DE 69224506D1
Authority
DE
Germany
Prior art keywords
electron beam
beam device
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69224506T
Other languages
English (en)
Other versions
DE69224506T2 (de
Inventor
Tadashi Otaka
Akimitsu Okura
Hiroshi Iwamoto
Hideo Todokoro
Tsutomu Komoda
Issei Tobita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Instruments Engineering Co Ltd
Hitachi Ltd
Hitachi Science Systems Ltd
Original Assignee
Hitachi Instruments Engineering Co Ltd
Hitachi Ltd
Hitachi Science Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3335981A external-priority patent/JP2911281B2/ja
Priority claimed from JP3335986A external-priority patent/JP2789399B2/ja
Priority claimed from JP3335985A external-priority patent/JP2817072B2/ja
Application filed by Hitachi Instruments Engineering Co Ltd, Hitachi Ltd, Hitachi Science Systems Ltd filed Critical Hitachi Instruments Engineering Co Ltd
Application granted granted Critical
Publication of DE69224506D1 publication Critical patent/DE69224506D1/de
Publication of DE69224506T2 publication Critical patent/DE69224506T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2448Secondary particle detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2809Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281Bottom of trenches or holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE69224506T 1991-11-27 1992-11-25 Elektronenstrahlgerät Expired - Lifetime DE69224506T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3335981A JP2911281B2 (ja) 1991-11-27 1991-11-27 電子線装置およびその観察方法
JP3335986A JP2789399B2 (ja) 1991-11-27 1991-11-27 走査型電子顕微鏡およびその観察方法
JP3335985A JP2817072B2 (ja) 1991-11-27 1991-11-27 走査電子顕微鏡

Publications (2)

Publication Number Publication Date
DE69224506D1 true DE69224506D1 (de) 1998-04-02
DE69224506T2 DE69224506T2 (de) 1998-10-01

Family

ID=27340757

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69224506T Expired - Lifetime DE69224506T2 (de) 1991-11-27 1992-11-25 Elektronenstrahlgerät
DE69233781T Expired - Lifetime DE69233781D1 (de) 1991-11-27 1992-11-25 Elektronenstrahlgerät
DE69231213T Expired - Lifetime DE69231213T2 (de) 1991-11-27 1992-11-25 Elektronenstrahlgerät

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE69233781T Expired - Lifetime DE69233781D1 (de) 1991-11-27 1992-11-25 Elektronenstrahlgerät
DE69231213T Expired - Lifetime DE69231213T2 (de) 1991-11-27 1992-11-25 Elektronenstrahlgerät

Country Status (3)

Country Link
US (1) US5412209A (de)
EP (3) EP0810629B1 (de)
DE (3) DE69224506T2 (de)

Families Citing this family (65)

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US6504393B1 (en) 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
DE19732093B4 (de) * 1997-07-25 2008-09-25 Carl Zeiss Nts Gmbh Korpuskularstrahlgerät
DE19845329C2 (de) * 1998-03-10 2001-09-27 Erik Essers Rasterelektronenmikroskop
EP1068630B1 (de) 1998-03-10 2005-07-20 Erik Essers Rasterelektronenmikroskop
EP0952606B1 (de) * 1998-04-24 2002-07-31 Advantest Corporation Dynamisch kompensierte Objektivlinse-Detektor-Vorrichtung und Verfahren
JP3041600B2 (ja) * 1998-05-19 2000-05-15 セイコーインスツルメンツ株式会社 複合荷電粒子ビーム装置
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US6744268B2 (en) 1998-08-27 2004-06-01 The Micromanipulator Company, Inc. High resolution analytical probe station
US6198299B1 (en) 1998-08-27 2001-03-06 The Micromanipulator Company, Inc. High Resolution analytical probe station
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US6414308B1 (en) * 1999-03-12 2002-07-02 International Business Machines Corporation Method for determining opened/unopened semiconductor contacts using a scanning electron microscope
JP4207307B2 (ja) * 1999-04-26 2009-01-14 日新イオン機器株式会社 チャージアップ測定装置
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JP2001110351A (ja) * 1999-10-05 2001-04-20 Hitachi Ltd 走査電子顕微鏡
JP4274649B2 (ja) * 1999-10-07 2009-06-10 株式会社日立製作所 微細パターン検査方法及び装置
JP2001156134A (ja) * 1999-11-26 2001-06-08 Mitsubishi Electric Corp 半導体装置の検査方法及び検査装置
US6787772B2 (en) * 2000-01-25 2004-09-07 Hitachi, Ltd. Scanning electron microscope
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JP4331854B2 (ja) * 2000-03-24 2009-09-16 富士通マイクロエレクトロニクス株式会社 走査型電子顕微鏡装置とその制御方法
US6407388B1 (en) * 2000-04-18 2002-06-18 Advantest Corp. Corpuscular beam device
EP1350259B1 (de) * 2000-12-22 2004-08-25 Fei Company Sem mit einem sekundärelektronendetektor mit einer zentralelektrode
JP2002324510A (ja) * 2001-04-25 2002-11-08 Jeol Ltd 走査電子顕微鏡
US7095019B1 (en) 2003-05-30 2006-08-22 Chem-Space Associates, Inc. Remote reagent chemical ionization source
DE10230929A1 (de) 2002-07-09 2004-01-29 Leo Elektronenmikroskopie Gmbh Verfahren zum elektronenmikroskopischen Beobachten einer Halbleiteranordnung und Vorrichtung hierfür
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
DE10301579A1 (de) * 2003-01-16 2004-07-29 Leo Elektronenmikroskopie Gmbh Elektronenstrahlgerät und Detektoranordnung
TWI323783B (en) 2003-01-27 2010-04-21 Ebara Corp Mapping projection type electron beam apparatus for sample inspection by electron emitted from the sample,sample evaluation method and semiconductor device manufacturing using same
US6812462B1 (en) 2003-02-21 2004-11-02 Kla-Tencor Technologies Corporation Dual electron beam instrument for multi-perspective
US7138626B1 (en) 2005-05-05 2006-11-21 Eai Corporation Method and device for non-contact sampling and detection
JP4828162B2 (ja) * 2005-05-31 2011-11-30 株式会社日立ハイテクノロジーズ 電子顕微鏡応用装置および試料検査方法
US7568401B1 (en) 2005-06-20 2009-08-04 Science Applications International Corporation Sample tube holder
JP4901196B2 (ja) * 2005-07-29 2012-03-21 株式会社日立ハイテクノロジーズ 画像形成方法、及び荷電粒子線装置
US7576322B2 (en) * 2005-11-08 2009-08-18 Science Applications International Corporation Non-contact detector system with plasma ion source
US7541580B2 (en) * 2006-03-31 2009-06-02 Fei Company Detector for charged particle beam instrument
JP4906409B2 (ja) * 2006-06-22 2012-03-28 株式会社アドバンテスト 電子ビーム寸法測定装置及び電子ビーム寸法測定方法
JP5054960B2 (ja) * 2006-10-13 2012-10-24 株式会社日立ハイテクノロジーズ 電子線を用いた試料の観察方法
EP1916695B1 (de) * 2006-10-25 2018-12-05 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Ladungsträgerstrahlgerät und Verfahren zum Betrieb desselben
JP4914180B2 (ja) * 2006-11-08 2012-04-11 株式会社日立ハイテクノロジーズ 時定数測定機能を搭載した走査型電子顕微鏡
US8123396B1 (en) 2007-05-16 2012-02-28 Science Applications International Corporation Method and means for precision mixing
JP2009099540A (ja) * 2007-09-27 2009-05-07 Hitachi High-Technologies Corp 試料の検査,測定方法、及び走査電子顕微鏡
US8008617B1 (en) 2007-12-28 2011-08-30 Science Applications International Corporation Ion transfer device
US8309923B2 (en) 2009-02-20 2012-11-13 Hitachi High-Technologies Corporation Sample observing method and scanning electron microscope
US8071957B1 (en) 2009-03-10 2011-12-06 Science Applications International Corporation Soft chemical ionization source
JP5645386B2 (ja) * 2009-09-30 2014-12-24 株式会社日立製作所 電磁場印加装置
JP5188529B2 (ja) 2010-03-30 2013-04-24 株式会社日立ハイテクノロジーズ 電子ビーム照射方法、及び走査電子顕微鏡
JP5372856B2 (ja) 2010-07-15 2013-12-18 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5341924B2 (ja) 2011-01-28 2013-11-13 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP5932428B2 (ja) * 2012-03-28 2016-06-08 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP5838138B2 (ja) 2012-08-30 2015-12-24 株式会社日立ハイテクノロジーズ 欠陥観察システムおよび欠陥観察方法
CZ307259B6 (cs) 2016-09-26 2018-05-02 Tescan Brno, S.R.O. Objektivová čočka pro zařízení využívající nejméně jednoho svazku nabitých částic
DE102017205231B3 (de) 2017-03-28 2018-08-09 Carl Zeiss Microscopy Gmbh Teilchenoptische Vorrichtung und Teilchenstrahlsystem
CN109935527B (zh) * 2017-12-15 2022-11-04 长鑫存储技术有限公司 接触孔检测方法
JP2021005497A (ja) * 2019-06-26 2021-01-14 キオクシア株式会社 電子顕微鏡およびビーム照射方法

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Also Published As

Publication number Publication date
US5412209A (en) 1995-05-02
EP0548573B1 (de) 1998-02-25
DE69231213D1 (de) 2000-08-03
EP0548573A3 (de) 1994-03-09
DE69224506T2 (de) 1998-10-01
EP0949653A2 (de) 1999-10-13
EP0810629B1 (de) 2000-06-28
DE69233781D1 (de) 2010-04-01
DE69231213T2 (de) 2001-03-01
EP0810629A1 (de) 1997-12-03
EP0949653A3 (de) 2005-12-21
EP0548573A2 (de) 1993-06-30
EP0949653B1 (de) 2010-02-17

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