DE69222203D1 - Hitzebeständige, positiv arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat, und Verfahren zur Herstellung eines hitzebeständigen positiven Musters - Google Patents

Hitzebeständige, positiv arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat, und Verfahren zur Herstellung eines hitzebeständigen positiven Musters

Info

Publication number
DE69222203D1
DE69222203D1 DE69222203T DE69222203T DE69222203D1 DE 69222203 D1 DE69222203 D1 DE 69222203D1 DE 69222203 T DE69222203 T DE 69222203T DE 69222203 T DE69222203 T DE 69222203T DE 69222203 D1 DE69222203 D1 DE 69222203D1
Authority
DE
Germany
Prior art keywords
heat
resistant
positive
producing
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69222203T
Other languages
English (en)
Other versions
DE69222203T2 (de
Inventor
Toshihiko Omote
Shunichi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3065634A external-priority patent/JPH055992A/ja
Priority claimed from JP3071767A external-priority patent/JPH04363361A/ja
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Application granted granted Critical
Publication of DE69222203D1 publication Critical patent/DE69222203D1/de
Publication of DE69222203T2 publication Critical patent/DE69222203T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/1025—Preparatory processes from tetracarboxylic acids or derivatives and diamines polymerised by radiations
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
DE1992622203 1991-03-05 1992-02-24 Hitzebeständige, positiv arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat, und Verfahren zur Herstellung eines hitzebeständigen positiven Musters Expired - Fee Related DE69222203T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3065634A JPH055992A (ja) 1991-03-05 1991-03-05 耐熱性ポジ型フオトレジスト組成物
JP3071767A JPH04363361A (ja) 1991-04-04 1991-04-04 耐熱性ポジ型フオトレジスト組成物
JP11116391 1991-04-15

Publications (2)

Publication Number Publication Date
DE69222203D1 true DE69222203D1 (de) 1997-10-23
DE69222203T2 DE69222203T2 (de) 1998-01-15

Family

ID=27298856

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992622203 Expired - Fee Related DE69222203T2 (de) 1991-03-05 1992-02-24 Hitzebeständige, positiv arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat, und Verfahren zur Herstellung eines hitzebeständigen positiven Musters

Country Status (2)

Country Link
EP (1) EP0502400B1 (de)
DE (1) DE69222203T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3093055B2 (ja) * 1992-07-07 2000-10-03 日東電工株式会社 耐熱性ネガ型フォトレジスト組成物および感光性基材、ならびにネガ型パターン形成方法
US5851736A (en) * 1991-03-05 1998-12-22 Nitto Denko Corporation Heat-resistant photoresist composition, photosensitive substrate, and process for forming heat-resistant positive or negative pattern
JP2635901B2 (ja) * 1992-03-13 1997-07-30 インターナショナル・ビジネス・マシーンズ・コーポレイション ポリイミドのネガティブ像形成方法
US5317082A (en) * 1992-12-22 1994-05-31 Amoco Corporation Photodefinable optical waveguides
DE69408709T2 (de) * 1993-04-28 1998-10-01 Hitachi Chemical Co Ltd Photoempfindliche Harzzusammensetzung
JPH06318038A (ja) * 1993-05-07 1994-11-15 Nitto Denko Corp 個体識別ラベル
JP3709997B2 (ja) * 1994-03-29 2005-10-26 日東電工株式会社 耐熱性ネガ型フォトレジスト組成物および感光性基材、ならびにネガ型パターン形成方法
US5886136A (en) * 1995-09-12 1999-03-23 Nippon Zeon Co., Ltd. Pattern forming process
JPH1039510A (ja) * 1996-07-29 1998-02-13 Nitto Denko Corp ネガ型フォトレジスト組成物及びその利用
US6160081A (en) * 1997-10-31 2000-12-12 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition
US6582879B2 (en) 2001-03-27 2003-06-24 Korea Research Institute Of Chemical Technology Reactive photo acid-generating agent and heat-resistant photoresist composition with polyamide precursor
JP4564439B2 (ja) 2005-03-07 2010-10-20 日東電工株式会社 ポジ型感光性樹脂組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3786628T2 (de) * 1986-09-04 1994-03-24 Kanegafuchi Chemical Ind Hoch molekulare, amphiphile, photoempfindliche Photopolymere und Herstellungsverfahren.
US4927736A (en) * 1987-07-21 1990-05-22 Hoechst Celanese Corporation Hydroxy polyimides and high temperature positive photoresists therefrom
EP0378156A3 (de) * 1989-01-09 1992-02-26 Nitto Denko Corporation Lichtempfindliche positiv arbeitende Polyimid-Zusammensetzung
US5114826A (en) * 1989-12-28 1992-05-19 Ibm Corporation Photosensitive polyimide compositions

Also Published As

Publication number Publication date
DE69222203T2 (de) 1998-01-15
EP0502400A1 (de) 1992-09-09
EP0502400B1 (de) 1997-09-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee