DE69233134D1 - Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters - Google Patents

Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters

Info

Publication number
DE69233134D1
DE69233134D1 DE69233134T DE69233134T DE69233134D1 DE 69233134 D1 DE69233134 D1 DE 69233134D1 DE 69233134 T DE69233134 T DE 69233134T DE 69233134 T DE69233134 T DE 69233134T DE 69233134 D1 DE69233134 D1 DE 69233134D1
Authority
DE
Germany
Prior art keywords
high resolution
mask pattern
resolution reproduction
pattern adapted
reproduction method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69233134T
Other languages
English (en)
Other versions
DE69233134T2 (de
Inventor
Naomasa Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP21089191A external-priority patent/JP3343919B2/ja
Priority claimed from JP21089291A external-priority patent/JP3128876B2/ja
Priority claimed from JP21128291A external-priority patent/JP3146542B2/ja
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of DE69233134D1 publication Critical patent/DE69233134D1/de
Application granted granted Critical
Publication of DE69233134T2 publication Critical patent/DE69233134T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69233134T 1991-08-22 1992-08-21 Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters Expired - Lifetime DE69233134T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP21089191 1991-08-22
JP21089191A JP3343919B2 (ja) 1991-08-22 1991-08-22 マスク及び回路素子製造方法並びに露光方法
JP21089291 1991-08-22
JP21089291A JP3128876B2 (ja) 1991-08-22 1991-08-22 パターン作成方法、及びパターン作成システム
JP21128291A JP3146542B2 (ja) 1991-08-23 1991-08-23 マスク製造方法、及びマスク製造システム
JP21128291 1991-08-23

Publications (2)

Publication Number Publication Date
DE69233134D1 true DE69233134D1 (de) 2003-08-28
DE69233134T2 DE69233134T2 (de) 2004-04-15

Family

ID=27329181

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69233134T Expired - Lifetime DE69233134T2 (de) 1991-08-22 1992-08-21 Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters

Country Status (3)

Country Link
US (1) US5546225A (de)
EP (2) EP1293833A1 (de)
DE (1) DE69233134T2 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3291818B2 (ja) * 1993-03-16 2002-06-17 株式会社ニコン 投影露光装置、及び該装置を用いる半導体集積回路製造方法
KR100296778B1 (ko) 1993-06-11 2001-10-24 오노 시게오 노광장치및그장치를사용하는소자제조방법
JP3227056B2 (ja) * 1994-06-14 2001-11-12 富士通株式会社 図形処理方法及び図形処理装置
GB2291219B (en) * 1994-07-05 1998-07-01 Nec Corp Photo-mask fabrication and use
JP3458549B2 (ja) 1994-08-26 2003-10-20 ソニー株式会社 パターン形成方法および該方法を用いた半導体デバイス製造方法と装置
JPH08297692A (ja) * 1994-09-16 1996-11-12 Mitsubishi Electric Corp 光近接補正装置及び方法並びにパタン形成方法
KR100346448B1 (ko) * 1994-12-29 2002-11-23 주식회사 하이닉스반도체 반도체소자용노광마스크
KR0172558B1 (ko) * 1995-03-22 1999-03-20 김주용 노광 마스크의 제조방법
KR0160924B1 (ko) * 1995-06-30 1998-12-15 김주용 노광 마스크
US5795682A (en) * 1996-03-08 1998-08-18 Lsi Logic Corporation Guard rings to compensate for side lobe ringing in attenuated phase shift reticles
US5862058A (en) * 1996-05-16 1999-01-19 International Business Machines Corporation Optical proximity correction method and system
US5740068A (en) * 1996-05-30 1998-04-14 International Business Machines Corporation Fidelity enhancement of lithographic and reactive-ion-etched images by optical proximity correction
US5994002A (en) * 1996-09-06 1999-11-30 Matsushita Electric Industrial Co., Ltd. Photo mask and pattern forming method
US5900340A (en) * 1997-03-03 1999-05-04 Motorola, Inc. One dimensional lithographic proximity correction using DRC shape functions
US5962173A (en) * 1997-03-27 1999-10-05 Vlsi Technology, Inc. Method for measuring the effectiveness of optical proximity corrections
JPH10282635A (ja) 1997-04-09 1998-10-23 Sony Corp パターンデータ補正方法、電子線描画方法、フォトマスク及びその作製方法、露光方法、半導体装置及びその製造方法、並びにパターンデータ補正装置
JPH1140482A (ja) * 1997-07-22 1999-02-12 Nec Corp 荷電粒子ビーム直描データ作成方法および描画方法
JPH1165082A (ja) * 1997-08-11 1999-03-05 Fujitsu Ltd フォトマスク及び半導体装置の製造方法
US6275971B1 (en) * 1997-09-30 2001-08-14 Philips Electronics North America Corporation Methods and apparatus for design rule checking
US6106979A (en) * 1997-12-30 2000-08-22 Micron Technology, Inc. Use of attenuating phase-shifting mask for improved printability of clear-field patterns
US6077630A (en) 1998-01-08 2000-06-20 Micron Technology, Inc. Subresolution grating for attenuated phase shifting mask fabrication
US6096457A (en) * 1998-02-27 2000-08-01 Micron Technology, Inc. Method for optimizing printing of a phase shift mask having a phase shift error
US5998069A (en) 1998-02-27 1999-12-07 Micron Technology, Inc. Electrically programmable photolithography mask
US6020616A (en) * 1998-03-31 2000-02-01 Vlsi Technology, Inc. Automated design of on-chip capacitive structures for suppressing inductive noise
US6010939A (en) 1998-03-31 2000-01-04 Vlsi Technology, Inc. Methods for making shallow trench capacitive structures
TW393681B (en) * 1998-06-11 2000-06-11 United Microelectronics Corp Method for checking a correction pattern
TW463230B (en) * 1999-04-19 2001-11-11 Nanya Technology Corp Optical correction method to improve the shrinkage of circuit pattern caused by scattering light
JP4226729B2 (ja) * 1999-06-30 2009-02-18 株式会社東芝 マスクパターンの補正方法
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
US6426269B1 (en) * 1999-10-21 2002-07-30 International Business Machines Corporation Dummy feature reduction using optical proximity effect correction
AU2001280485A1 (en) * 2000-07-07 2002-01-21 Asm Lithography B.V. A method of illuminating a photomask using chevron illumination
DE10126130A1 (de) * 2001-05-29 2002-12-12 Infineon Technologies Ag Verfahren zur Herstellung von Kontaktlöchern
JP4607380B2 (ja) * 2001-07-23 2011-01-05 富士通セミコンダクター株式会社 パターン検出方法、パターン検査方法およびパターン修正、加工方法
US20030233630A1 (en) * 2001-12-14 2003-12-18 Torbjorn Sandstrom Methods and systems for process control of corner feature embellishment
DE10242142A1 (de) * 2002-09-03 2004-03-25 Kleo Halbleitertechnik Gmbh & Co Kg Verfahren und Vorrichtung zum Herstellen von belichteten Strukturen
SG137657A1 (en) * 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination
US7698665B2 (en) * 2003-04-06 2010-04-13 Luminescent Technologies, Inc. Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
US7480889B2 (en) * 2003-04-06 2009-01-20 Luminescent Technologies, Inc. Optimized photomasks for photolithography
US7124394B1 (en) 2003-04-06 2006-10-17 Luminescent Technologies, Inc. Method for time-evolving rectilinear contours representing photo masks
JP2005181663A (ja) * 2003-12-19 2005-07-07 Oki Electric Ind Co Ltd マスクパターンの修正方法
JP3968524B2 (ja) * 2004-02-04 2007-08-29 ソニー株式会社 マスク、露光方法および半導体装置の製造方法
CN101297390B (zh) * 2005-09-13 2011-04-20 朗明科技公司 用于光刻法的系统、掩模和方法
US7921385B2 (en) * 2005-10-03 2011-04-05 Luminescent Technologies Inc. Mask-pattern determination using topology types
WO2007041602A2 (en) * 2005-10-03 2007-04-12 Luminescent Technologies, Inc. Lithography verification using guard bands
WO2007041701A2 (en) * 2005-10-04 2007-04-12 Luminescent Technologies, Inc. Mask-patterns including intentional breaks
US7824842B2 (en) * 2005-10-05 2010-11-02 Asml Netherlands B.V. Method of patterning a positive tone resist layer overlaying a lithographic substrate
WO2007044557A2 (en) 2005-10-06 2007-04-19 Luminescent Technologies, Inc. System, masks, and methods for photomasks optimized with approximate and accurate merit functions
US20070099097A1 (en) * 2005-11-03 2007-05-03 Samsung Electronics Co., Ltd. Multi-purpose measurement marks for semiconductor devices, and methods, systems and computer program products for using same
WO2007058188A1 (ja) * 2005-11-15 2007-05-24 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US7713889B2 (en) * 2005-11-16 2010-05-11 Nikon Corporation Substrate processing method, photomask manufacturing method, photomask, and device manufacturing method
CN101278375B (zh) 2005-11-16 2010-12-22 株式会社尼康 基板处理方法、光掩膜的制造方法及光掩膜、以及元件制造方法
DE102006008080A1 (de) * 2006-02-22 2007-08-30 Kleo Maschinenbau Ag Belichtungsanlage
US7703067B2 (en) * 2006-03-31 2010-04-20 Synopsys, Inc. Range pattern definition of susceptibility of layout regions to fabrication issues
US7503029B2 (en) * 2006-03-31 2009-03-10 Synopsys, Inc. Identifying layout regions susceptible to fabrication issues by using range patterns
EP1843202B1 (de) * 2006-04-06 2015-02-18 ASML Netherlands B.V. Verfahren zur Durchführung von Dunkelfeld-Doppeldipollithografie
US8347239B2 (en) * 2006-06-30 2013-01-01 Synopsys, Inc. Fast lithography compliance check for place and route optimization
JP5171071B2 (ja) * 2007-03-09 2013-03-27 株式会社日立ハイテクノロジーズ 撮像倍率調整方法及び荷電粒子線装置
US7902613B1 (en) * 2008-01-28 2011-03-08 Cadence Design Systems, Inc. Self-alignment for semiconductor patterns
US8797721B2 (en) 2010-02-02 2014-08-05 Apple Inc. Portable electronic device housing with outer glass surfaces
JP5852374B2 (ja) * 2011-09-07 2016-02-03 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
US11372324B2 (en) * 2019-02-11 2022-06-28 United Microelectronics Corporation Method for correcting mask pattern and mask pattern thereof
CN111752088B (zh) * 2020-06-22 2023-04-07 上海华力微电子有限公司 一种网格图形统一尺寸的方法、存储介质及计算机设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1154327B (de) * 1962-10-27 1963-09-12 Telefunken Patent Verfahren zur Herstellung von Mikromasken
JPS60124822A (ja) * 1983-12-09 1985-07-03 Fujitsu Ltd 縮小投影露光装置を用いたパタ−ン形成方法
US4759616A (en) * 1985-08-26 1988-07-26 Eastman Kodak Company Method and apparatus for anamorphically shaping and deflecting electromagnetic beams
JPS6259296A (ja) * 1985-09-10 1987-03-14 Green Cross Corp:The ペプタイド誘導体
US4884101A (en) * 1987-02-03 1989-11-28 Nikon Corporation Apparatus capable of adjusting the light amount
US4820899A (en) * 1987-03-03 1989-04-11 Nikon Corporation Laser beam working system
US4895780A (en) * 1987-05-13 1990-01-23 General Electric Company Adjustable windage method and mask for correction of proximity effect in submicron photolithography
JPS6444449A (en) * 1987-08-12 1989-02-16 Hitachi Ltd Resist pattern forming method
US4947413A (en) * 1988-07-26 1990-08-07 At&T Bell Laboratories Resolution doubling lithography technique
JP2699433B2 (ja) * 1988-08-12 1998-01-19 株式会社ニコン 投影型露光装置及び投影露光方法
JPH04221954A (ja) * 1990-12-25 1992-08-12 Nec Corp フォトマスク
US5242770A (en) * 1992-01-16 1993-09-07 Microunity Systems Engineering, Inc. Mask for photolithography

Also Published As

Publication number Publication date
DE69233134T2 (de) 2004-04-15
EP0529971B1 (de) 2003-07-23
EP0529971A1 (de) 1993-03-03
EP1293833A1 (de) 2003-03-19
US5546225A (en) 1996-08-13

Similar Documents

Publication Publication Date Title
DE69233134D1 (de) Reproduktionsverfahren mit hoher Auflösung unter Verwendung eines dem Verfahren angepassten Maskenmusters
DE68923247D1 (de) Verfahren zum Erzeugen eines Fotolackmusters.
DE69133544D1 (de) Vorrichtung zur Projektion eines Maskenmusters auf ein Substrat
DE69130783T2 (de) Vorrichtung zur Projecktion eines Maskenmusters auf ein Substrat
DE68927471D1 (de) Verfahren zur Schattierung eines graphischen Bildes
DE69106894T2 (de) Verfahren zur regelung eines generators.
DE69218611T2 (de) Verfahren zur herstellung eines halbleiter-beschleunigungsmessers
DE69308755D1 (de) Verfahren zur Herstellung eines Musters durch Silylierung
DE69225853D1 (de) Verfahren zum Erzeugen eines allseitig wirkenden Abtastmusters
DE69326982D1 (de) Verfahren zur Bildung eines Lackmusters unter Verwendung einer optimierten Antireflexionsschicht.
DE59101103D1 (de) Verfahren zum Einstellen der Dosierorgane einer Verteilmaschine.
DE58909538D1 (de) Kontinuierliches Verfahren zur Herstellung eines lichtempfindlichen Aufzeichnungselements
DE59107132D1 (de) Verfahren zum drucken eines halbtonbildes
DE69115999T2 (de) Verfahren zur Herstellung eines Maskenmusters
DE69215050T2 (de) Verfahren zum Aktivieren eines Katalysators
DE69205226D1 (de) Verfahren zur Herstellung von Bildern mittels einer photopolymerisierbaren Zusammensetzung.
DE69020218T2 (de) Einrichtung zur Erzeugung eines Zeichenmusters hoher Qualität.
DE69131732T2 (de) Verfahren zur Erzeugung eines Musters
DE69220600T2 (de) Verfahren zum Herstellen einer rotationsinduzierten Übergitterstruktur
DE69205837D1 (de) Verfahren zum herstellen einer siebtrommel.
DE3581941D1 (de) Verfahren zum herstellen eines photolackmusters.
DE59108180D1 (de) Verfahren zum drucken eines halbtonbildes
DE69211828D1 (de) Verfahren zum Verdrahten eines Laserarrays
DE3581324D1 (de) Verfahren zur herstellung eines resistmusters.
DE69110427T2 (de) Verfahren zur Messung der Verschiebung eines Musters.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R071 Expiry of right

Ref document number: 529971

Country of ref document: EP