JPS6444449A - Resist pattern forming method - Google Patents
Resist pattern forming methodInfo
- Publication number
- JPS6444449A JPS6444449A JP62199781A JP19978187A JPS6444449A JP S6444449 A JPS6444449 A JP S6444449A JP 62199781 A JP62199781 A JP 62199781A JP 19978187 A JP19978187 A JP 19978187A JP S6444449 A JPS6444449 A JP S6444449A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- profile
- resist
- mask
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To lessen the change of the shape in a formed pattern, even when the lag of the focal point in a projected image exists, by using a mask having the pattern with a different profile from that of a prescribed resist pattern in the titled method. CONSTITUTION:When the pattern is formed by projectively exposing a photomask pattern on a resist mounted on a substrate, followed by developing it, the photomask having the pattern with the different profile from that of the prescribed resist pattern is used. For example, in order to obtain a resist line with the prescribed profile 2, the profile 3 of a mask line pattern is positioned in the inner side of a line part 1 than the profile 2 separating from the line part 1 by a distance 4. And, in order to obtain a resist space pattern 16, the mask is formed in such way that the profile 18 of a light shielding part 17 of the mask separates from the profile 16 of a resist space by the distance 4. And, the distance 4 is preferably adjusted so as to be a range of 0.1-0.2mum according to the kind of an exposure device to be used.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62199781A JPS6444449A (en) | 1987-08-12 | 1987-08-12 | Resist pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62199781A JPS6444449A (en) | 1987-08-12 | 1987-08-12 | Resist pattern forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6444449A true JPS6444449A (en) | 1989-02-16 |
Family
ID=16413502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62199781A Pending JPS6444449A (en) | 1987-08-12 | 1987-08-12 | Resist pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6444449A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5546225A (en) * | 1991-08-22 | 1996-08-13 | Nikon Corporation | High resolution printing technique by using improved mask pattern and improved illumination system |
-
1987
- 1987-08-12 JP JP62199781A patent/JPS6444449A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5546225A (en) * | 1991-08-22 | 1996-08-13 | Nikon Corporation | High resolution printing technique by using improved mask pattern and improved illumination system |
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