DE69012874D1 - Gerät zur Projektion eines Maskenmusters auf ein Substrat. - Google Patents

Gerät zur Projektion eines Maskenmusters auf ein Substrat.

Info

Publication number
DE69012874D1
DE69012874D1 DE69012874T DE69012874T DE69012874D1 DE 69012874 D1 DE69012874 D1 DE 69012874D1 DE 69012874 T DE69012874 T DE 69012874T DE 69012874 T DE69012874 T DE 69012874T DE 69012874 D1 DE69012874 D1 DE 69012874D1
Authority
DE
Germany
Prior art keywords
projecting
substrate
mask pattern
pattern onto
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69012874T
Other languages
English (en)
Other versions
DE69012874T2 (de
Inventor
Stefan Wittekoek
Den Brink Marinus Aart Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Application granted granted Critical
Publication of DE69012874D1 publication Critical patent/DE69012874D1/de
Publication of DE69012874T2 publication Critical patent/DE69012874T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69012874T 1989-04-20 1990-04-13 Gerät zur Projektion eines Maskenmusters auf ein Substrat. Expired - Fee Related DE69012874T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8900991A NL8900991A (nl) 1989-04-20 1989-04-20 Apparaat voor het afbeelden van een maskerpatroon op een substraat.

Publications (2)

Publication Number Publication Date
DE69012874D1 true DE69012874D1 (de) 1994-11-03
DE69012874T2 DE69012874T2 (de) 1995-04-20

Family

ID=19854515

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012874T Expired - Fee Related DE69012874T2 (de) 1989-04-20 1990-04-13 Gerät zur Projektion eines Maskenmusters auf ein Substrat.

Country Status (6)

Country Link
US (1) US5100237A (de)
EP (1) EP0393775B1 (de)
JP (1) JP2963722B2 (de)
KR (1) KR0158681B1 (de)
DE (1) DE69012874T2 (de)
NL (1) NL8900991A (de)

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JP3216240B2 (ja) * 1992-06-04 2001-10-09 キヤノン株式会社 位置合わせ方法及びそれを用いた投影露光装置
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US5621813A (en) * 1993-01-14 1997-04-15 Ultratech Stepper, Inc. Pattern recognition alignment system
US6153886A (en) * 1993-02-19 2000-11-28 Nikon Corporation Alignment apparatus in projection exposure apparatus
BE1007851A3 (nl) * 1993-12-03 1995-11-07 Asml Lithography B V Belichtingseenheid met een voorziening tegen vervuiling van optische componenten en een fotolithografisch apparaat voorzien van een dergelijke belichtingseenheid.
BE1007876A4 (nl) * 1993-12-17 1995-11-07 Philips Electronics Nv Stralingsbron-eenheid voor het opwekken van een bundel met twee polarisatierichtingen en twee frequenties.
BE1007907A3 (nl) * 1993-12-24 1995-11-14 Asm Lithography Bv Lenzenstelsel met in gasgevulde houder aangebrachte lenselementen en fotolithografisch apparaat voorzien van een dergelijk stelsel.
US6005255A (en) * 1994-05-18 1999-12-21 Symbol Technologies, Inc. Timing synchronization for image scanning
US5959286A (en) * 1994-05-18 1999-09-28 Symbol Technologies, Inc. Method and apparatus for raster scanning of images
WO1995034025A1 (en) * 1994-06-02 1995-12-14 Philips Electronics N.V. Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method
EP0721608B1 (de) * 1994-08-02 2003-10-01 Koninklijke Philips Electronics N.V. Verfahren zur wiederholten abbildung eines maskenmusters auf einem substrat
US5483345A (en) * 1994-09-06 1996-01-09 Mrs Technology, Inc. Alignment system for use in lithography utilizing a spherical reflector having a centered etched-on projection object
JP3555208B2 (ja) * 1994-12-14 2004-08-18 株式会社ニコン 露光方法
US6034378A (en) 1995-02-01 2000-03-07 Nikon Corporation Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus
KR970002483A (ko) * 1995-06-01 1997-01-24 오노 시게오 노광 장치
WO1997035234A1 (en) * 1996-03-15 1997-09-25 Philips Electronics N.V. Alignment device and lithographic apparatus provided with such a device
KR100390818B1 (ko) * 1996-06-28 2003-08-30 주식회사 하이닉스반도체 반도체균일패턴형성방법
US5943089A (en) * 1996-08-23 1999-08-24 Speedline Technologies, Inc. Method and apparatus for viewing an object and for viewing a device that acts upon the object
KR100525067B1 (ko) * 1997-01-20 2005-12-21 가부시키가이샤 니콘 노광 장치의 광학 특성 측정 방법, 노광 장치의 동작 방법 및 투영 노광 장치
TW367407B (en) * 1997-12-22 1999-08-21 Asml Netherlands Bv Interferometer system with two wavelengths, and lithographic apparatus provided with such a system
US6417922B1 (en) 1997-12-29 2002-07-09 Asml Netherlands B.V. Alignment device and lithographic apparatus comprising such a device
US6160622A (en) * 1997-12-29 2000-12-12 Asm Lithography, B.V. Alignment device and lithographic apparatus comprising such a device
US6061606A (en) * 1998-08-25 2000-05-09 International Business Machines Corporation Geometric phase analysis for mask alignment
TW559688B (en) * 1999-04-19 2003-11-01 Asml Netherlands Bv Lithographic projection apparatus, vacuum apparatus, low-stiffness seal for sealing between vacuum chamber wall and elongate rod, device manufacturing method and integrated circuit manufactured thereof
TWI231405B (en) * 1999-12-22 2005-04-21 Asml Netherlands Bv Lithographic projection apparatus, position detection device, and method of manufacturing a device using a lithographic projection apparatus
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
JP5180419B2 (ja) * 2000-08-30 2013-04-10 ケーエルエー−テンカー・コーポレーション 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
TW556296B (en) * 2000-12-27 2003-10-01 Koninkl Philips Electronics Nv Method of measuring alignment of a substrate with respect to a reference alignment mark
WO2002065545A2 (en) * 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
JP4342155B2 (ja) 2001-05-23 2009-10-14 エーエスエムエル ネザーランズ ビー．ブイ． 位置決めマークを備えた基板、マスクを設計する方法、コンピュータ・プログラム、位置決めマークを露光するマスク、およびデバイス製造方法
JP3639807B2 (ja) * 2001-06-27 2005-04-20 キヤノン株式会社 光学素子及び製造方法
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
TWI227814B (en) * 2002-09-20 2005-02-11 Asml Netherlands Bv Alignment system and methods for lithographic systems using at least two wavelengths
DE10258715B4 (de) 2002-12-10 2006-12-21 Carl Zeiss Smt Ag Verfahren zur Herstellung eines optischen Abbildungssystems
US7075639B2 (en) * 2003-04-25 2006-07-11 Kla-Tencor Technologies Corporation Method and mark for metrology of phase errors on phase shift masks
US7608468B1 (en) * 2003-07-02 2009-10-27 Kla-Tencor Technologies, Corp. Apparatus and methods for determining overlay and uses of same
US7346878B1 (en) 2003-07-02 2008-03-18 Kla-Tencor Technologies Corporation Apparatus and methods for providing in-chip microtargets for metrology or inspection
US7629697B2 (en) * 2004-11-12 2009-12-08 Asml Netherlands B.V. Marker structure and method for controlling alignment of layers of a multi-layered substrate
US7557921B1 (en) 2005-01-14 2009-07-07 Kla-Tencor Technologies Corporation Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools
US7433018B2 (en) * 2005-12-27 2008-10-07 Asml Netherlands B.V. Pattern alignment method and lithographic apparatus
KR100807119B1 (ko) * 2006-08-11 2008-02-28 세크론 주식회사 프로빙 검사장치용 광학 시스템 및 이를 이용하는 프로빙검사 방법
DE102008017645A1 (de) * 2008-04-04 2009-10-08 Carl Zeiss Smt Ag Vorrichtung zur mikrolithographischen Projektionsbelichtung sowie Vorrichtung zur Inspektion einer Oberfläche eines Substrats
KR101573463B1 (ko) 2009-02-26 2015-12-01 삼성전자주식회사 정렬부를 포함하는 반도체 장비
US8033666B2 (en) * 2009-05-28 2011-10-11 Eastman Kodak Company Beam alignment system using arrayed light sources
CN101930904B (zh) * 2009-06-22 2012-11-21 由田新技股份有限公司 晶片顶出装置与取像装置的组合
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
DE102012208514A1 (de) 2012-05-22 2013-11-28 Carl Zeiss Smt Gmbh Justagevorrichtung sowie Masken-Inspektionsvorrichtung mit einer derartigen Justagevorrichtung
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
DE102017105697A1 (de) * 2017-03-16 2018-09-20 Ev Group E. Thallner Gmbh Verfahren und Vorrichtung zur Ausrichtung zweier optischer Teilsysteme

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US3558222A (en) * 1968-02-06 1971-01-26 Bell Telephone Labor Inc Photolithography apparatus and method
DE2608176A1 (de) * 1976-02-27 1977-09-01 Inst Zemnogo Magnetizma Ionosf Einrichtung zur kohaerenten beleuchtung von objekten
US4795244A (en) * 1985-09-20 1989-01-03 Nikon Corporation Projection type exposure apparatus
NL8600639A (nl) * 1986-03-12 1987-10-01 Asm Lithography Bv Werkwijze voor het ten opzichte van elkaar uitrichten van een masker en een substraat en inrichting voor het uitvoeren van de werkwijze.

Also Published As

Publication number Publication date
KR900016813A (ko) 1990-11-14
US5100237A (en) 1992-03-31
EP0393775A1 (de) 1990-10-24
JPH033224A (ja) 1991-01-09
EP0393775B1 (de) 1994-09-28
DE69012874T2 (de) 1995-04-20
KR0158681B1 (ko) 1998-12-15
JP2963722B2 (ja) 1999-10-18
NL8900991A (nl) 1990-11-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee