DE69203395D1 - Leitende Elektrodenschichten für ferroelektrische Kondensatoren in integrierten Schaltungen und Methode. - Google Patents

Leitende Elektrodenschichten für ferroelektrische Kondensatoren in integrierten Schaltungen und Methode.

Info

Publication number
DE69203395D1
DE69203395D1 DE69203395T DE69203395T DE69203395D1 DE 69203395 D1 DE69203395 D1 DE 69203395D1 DE 69203395 T DE69203395 T DE 69203395T DE 69203395 T DE69203395 T DE 69203395T DE 69203395 D1 DE69203395 D1 DE 69203395D1
Authority
DE
Germany
Prior art keywords
methods
integrated circuits
electrode layers
conductive electrode
ferroelectric capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69203395T
Other languages
English (en)
Other versions
DE69203395T2 (de
Inventor
Lee Kammerdiner
Maria Huffman
Manoochehr Golabi-Khoozani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramtron International Corp
Original Assignee
Ramtron International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramtron International Corp filed Critical Ramtron International Corp
Publication of DE69203395D1 publication Critical patent/DE69203395D1/de
Application granted granted Critical
Publication of DE69203395T2 publication Critical patent/DE69203395T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
DE69203395T 1991-06-13 1992-05-26 Leitende Elektrodenschichten für ferroelektrische Kondensatoren in integrierten Schaltungen und Methode. Expired - Fee Related DE69203395T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/714,682 US5142437A (en) 1991-06-13 1991-06-13 Conducting electrode layers for ferroelectric capacitors in integrated circuits and method

Publications (2)

Publication Number Publication Date
DE69203395D1 true DE69203395D1 (de) 1995-08-17
DE69203395T2 DE69203395T2 (de) 1995-12-21

Family

ID=24871042

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69203395T Expired - Fee Related DE69203395T2 (de) 1991-06-13 1992-05-26 Leitende Elektrodenschichten für ferroelektrische Kondensatoren in integrierten Schaltungen und Methode.

Country Status (4)

Country Link
US (1) US5142437A (de)
EP (1) EP0518117B1 (de)
JP (1) JP3275335B2 (de)
DE (1) DE69203395T2 (de)

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US5874369A (en) * 1996-12-05 1999-02-23 International Business Machines Corporation Method for forming vias in a dielectric film
JP3452763B2 (ja) 1996-12-06 2003-09-29 シャープ株式会社 半導体記憶装置および半導体記憶装置の製造方法
US5790366A (en) * 1996-12-06 1998-08-04 Sharp Kabushiki Kaisha High temperature electrode-barriers for ferroelectric and other capacitor structures
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US6054331A (en) * 1997-01-15 2000-04-25 Tong Yang Cement Corporation Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate
US6498097B1 (en) 1997-05-06 2002-12-24 Tong Yang Cement Corporation Apparatus and method of forming preferred orientation-controlled platinum film using oxygen
JP3484324B2 (ja) 1997-07-29 2004-01-06 シャープ株式会社 半導体メモリ素子
JP3319994B2 (ja) * 1997-09-29 2002-09-03 シャープ株式会社 半導体記憶素子
US6935002B1 (en) * 1997-10-13 2005-08-30 Murata Manufacturing Co., Ltd. Method of manufacturing a nonreciprocal circuit device
US6417535B1 (en) 1998-12-23 2002-07-09 Lsi Logic Corporation Vertical interdigitated metal-insulator-metal capacitor for an integrated circuit
US6284654B1 (en) * 1998-04-16 2001-09-04 Advanced Technology Materials, Inc. Chemical vapor deposition process for fabrication of hybrid electrodes
US6268260B1 (en) 1999-03-31 2001-07-31 Lam Research Corporation Methods of forming memory cell capacitor plates in memory cell capacitor structures
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
SE513809C2 (sv) * 1999-04-13 2000-11-06 Ericsson Telefon Ab L M Avstämbara mikrovågsanordningar
US6504202B1 (en) 2000-02-02 2003-01-07 Lsi Logic Corporation Interconnect-embedded metal-insulator-metal capacitor
JP5646798B2 (ja) * 1999-11-11 2014-12-24 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体集積回路装置の製造方法
DE19959711A1 (de) * 1999-12-10 2001-06-21 Infineon Technologies Ag Verfahren zur Herstellung einer strukturierten Metallschicht
US6229685B1 (en) * 1999-12-20 2001-05-08 Philips Electronics North America Corp. Thin capacitive structures and methods for making the same
JP3914681B2 (ja) * 2000-03-08 2007-05-16 エルピーダメモリ株式会社 半導体装置およびその製造方法
US6341056B1 (en) * 2000-05-17 2002-01-22 Lsi Logic Corporation Capacitor with multiple-component dielectric and method of fabricating same
US6566186B1 (en) 2000-05-17 2003-05-20 Lsi Logic Corporation Capacitor with stoichiometrically adjusted dielectric and method of fabricating same
JP2002100740A (ja) * 2000-09-21 2002-04-05 Oki Electric Ind Co Ltd 半導体記憶素子及びその製造方法
US6730575B2 (en) * 2001-08-30 2004-05-04 Micron Technology, Inc. Methods of forming perovskite-type material and capacitor dielectric having perovskite-type crystalline structure
US6686236B2 (en) * 2001-12-21 2004-02-03 Texas Instruments Incorporated Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
JP4218350B2 (ja) * 2002-02-01 2009-02-04 パナソニック株式会社 強誘電体薄膜素子およびその製造方法、これを用いた薄膜コンデンサ並びに圧電アクチュエータ
US6728093B2 (en) * 2002-07-03 2004-04-27 Ramtron International Corporation Method for producing crystallographically textured electrodes for textured PZT capacitors
DE10303316A1 (de) * 2003-01-28 2004-08-12 Forschungszentrum Jülich GmbH Schneller remanenter Speicher
NO20041733L (no) * 2004-04-28 2005-10-31 Thin Film Electronics Asa Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling.
US20060073613A1 (en) * 2004-09-29 2006-04-06 Sanjeev Aggarwal Ferroelectric memory cells and methods for fabricating ferroelectric memory cells and ferroelectric capacitors thereof
JP2007184623A (ja) * 2007-01-22 2007-07-19 Rohm Co Ltd 誘電体キャパシタ
KR101079478B1 (ko) * 2009-12-30 2011-11-03 삼성전기주식회사 적층 세라믹 커패시터 및 그 제조방법
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
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Also Published As

Publication number Publication date
US5142437A (en) 1992-08-25
JPH04367211A (ja) 1992-12-18
EP0518117B1 (de) 1995-07-12
EP0518117A1 (de) 1992-12-16
JP3275335B2 (ja) 2002-04-15
DE69203395T2 (de) 1995-12-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee