DE69126477D1 - Verfahren zur Herstellung von Feldeffekttransistoren - Google Patents

Verfahren zur Herstellung von Feldeffekttransistoren

Info

Publication number
DE69126477D1
DE69126477D1 DE69126477T DE69126477T DE69126477D1 DE 69126477 D1 DE69126477 D1 DE 69126477D1 DE 69126477 T DE69126477 T DE 69126477T DE 69126477 T DE69126477 T DE 69126477T DE 69126477 D1 DE69126477 D1 DE 69126477D1
Authority
DE
Germany
Prior art keywords
production
field effect
effect transistors
transistors
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69126477T
Other languages
English (en)
Inventor
Takayuki Fujii
Mitsunori Nakatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69126477D1 publication Critical patent/DE69126477D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69126477T 1990-07-17 1991-07-16 Verfahren zur Herstellung von Feldeffekttransistoren Expired - Lifetime DE69126477D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2189838A JPH0475351A (ja) 1990-07-17 1990-07-17 化合物半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE69126477D1 true DE69126477D1 (de) 1997-07-17

Family

ID=16248056

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126477T Expired - Lifetime DE69126477D1 (de) 1990-07-17 1991-07-16 Verfahren zur Herstellung von Feldeffekttransistoren

Country Status (4)

Country Link
US (1) US5112766A (de)
EP (1) EP0467636B1 (de)
JP (1) JPH0475351A (de)
DE (1) DE69126477D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250453A (en) * 1989-04-12 1993-10-05 Mitsubishi Denki Kabushiki Kaisha Production method of a semiconductor device
JP2786307B2 (ja) * 1990-04-19 1998-08-13 三菱電機株式会社 電界効果トランジスタ及びその製造方法
JPH0444328A (ja) * 1990-06-11 1992-02-14 Mitsubishi Electric Corp 半導体装置及びその製造方法
FR2686734B1 (fr) * 1992-01-24 1994-03-11 Thomson Composants Microondes Procede de realisation d'un transistor.
JP4417439B2 (ja) * 1994-06-29 2010-02-17 フリースケール セミコンダクター インコーポレイテッド エッチング・ストップ層を利用する半導体装置構造とその方法
US5773334A (en) * 1994-09-26 1998-06-30 Toyota Jidosha Kabushiki Kaisha Method of manufacturing a semiconductor device
US5716866A (en) * 1995-08-30 1998-02-10 Motorola, Inc. Method of forming a semiconductor device
US6096610A (en) * 1996-03-29 2000-08-01 Intel Corporation Transistor suitable for high voltage circuit
TW480576B (en) * 2000-05-12 2002-03-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing same
TWI286338B (en) * 2000-05-12 2007-09-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US6503783B1 (en) * 2000-08-31 2003-01-07 Micron Technology, Inc. SOI CMOS device with reduced DIBL
US6872640B1 (en) * 2004-03-16 2005-03-29 Micron Technology, Inc. SOI CMOS device with reduced DIBL
US7009250B1 (en) 2004-08-20 2006-03-07 Micron Technology, Inc. FinFET device with reduced DIBL
US20070166971A1 (en) * 2006-01-17 2007-07-19 Atmel Corporation Manufacturing of silicon structures smaller than optical resolution limits
JP5442235B2 (ja) * 2008-11-06 2014-03-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4280855A (en) * 1980-01-23 1981-07-28 Ibm Corporation Method of making a dual DMOS device by ion implantation and diffusion
US4312680A (en) * 1980-03-31 1982-01-26 Rca Corporation Method of manufacturing submicron channel transistors
JPS5742151A (en) * 1980-08-28 1982-03-09 Fujitsu Ltd Formation of pattern
US4419809A (en) * 1981-12-30 1983-12-13 International Business Machines Corporation Fabrication process of sub-micrometer channel length MOSFETs
JPS6046074A (ja) * 1983-08-24 1985-03-12 Toshiba Corp 電界効果トランジスタの製造方法
JPS6070768A (ja) * 1983-09-27 1985-04-22 Toshiba Corp 電界効果トランジスタの製造方法
JPS60137070A (ja) * 1983-12-26 1985-07-20 Toshiba Corp 半導体装置の製造方法
JPS60182171A (ja) * 1984-02-29 1985-09-17 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4636822A (en) * 1984-08-27 1987-01-13 International Business Machines Corporation GaAs short channel lightly doped drain MESFET structure and fabrication
JPS6182482A (ja) * 1984-09-29 1986-04-26 Toshiba Corp ＧａＡｓ電界効果トランジスタの製造方法
DE3578271D1 (de) * 1984-11-02 1990-07-19 Toshiba Kawasaki Kk Feldeffekttransistor mit einem schottky-gate und herstellungsverfahren dafuer.
JPS6233476A (ja) * 1985-08-06 1987-02-13 Nec Corp 電界効果トランジスタおよびその製造方法
JPS6245184A (ja) * 1985-08-23 1987-02-27 Matsushita Electric Ind Co Ltd 電界効果トランジスタおよびその製造方法
JPH0824132B2 (ja) * 1985-10-18 1996-03-06 株式会社日立製作所 電界効果トランジスタの製造方法
JPS62274767A (ja) * 1986-05-23 1987-11-28 Fujitsu Ltd 高耐圧半導体装置及びその製造方法
JPH01251667A (ja) * 1988-03-30 1989-10-06 Nec Corp 電界効果トランジスタの製造方法
JP2708178B2 (ja) * 1988-06-01 1998-02-04 三菱電機株式会社 半導体集積回路
JP2553699B2 (ja) * 1989-04-12 1996-11-13 三菱電機株式会社 半導体装置の製造方法
JPH0817184B2 (ja) * 1989-11-08 1996-02-21 三菱電機株式会社 化合物半導体装置の製造方法

Also Published As

Publication number Publication date
EP0467636B1 (de) 1997-06-11
EP0467636A1 (de) 1992-01-22
JPH0475351A (ja) 1992-03-10
US5112766A (en) 1992-05-12

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